ON2170

Reflective Photosensors (Photo Reflectors) CNB1302 Reflective Photosensor Overview CNB1302 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package. Unit : mm Mark for indicating anode side C0.5 1 3 9.0±1.0 2.0±0.2 Chip center Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used Fast response : tr, tf = 20µs (typ.) Easy interface for control circuit 9.0±1.0 2.7±0.2 0.4 4-0.7 4-0.5 ±0.1 2 1.8 Features 2.0±0.2 4 0.5 0.15 Control of motor and other rotary units Detection of position and edge Detection of paper, film and cloth Start, end mark detection of magnetic tape Absolute Maximum Ratings (Ta = 25˚C) Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC VCEO VECO PC *2 Unit V mA mW mA V V mW ˚C ˚C *1 3 50 75 20 30 5 50 –25 to +85 Topr Tstg –30 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 0.67 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Paramwter Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current Collector current Leakage current Transfer characteristics Response time Forward voltage (DC) Symbol VF IR Ct ICEO ID IF = 50mA VR = 3 V VR = 0V, f = 1MHz VCE = 10V 90 20 0.4 *2 Output Conditions IC*1, *2 VCC = 5V, IF = 10mA, RL = 100Ω, d = 1mm VCC = 5V, IF = 10mA, RL = 100Ω tr*3 , tf*4 VCC = 5V, IC = 0.1mA, RL = 100Ω Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA *1 I C classifications Class IC (µA) Q 90 to 220 R 180 to 440 S 360 to 880 *3 Time ,, , VCC required for the output current to increase from 10% to 90% of its final value I F *4 Time required for the output current to decrease from 90% to 10% of its initial value ,, ,, 1 23 4 Pin connection Applications 1.5±0.2 3.4±0.3 min typ 1.3 0.01 30 max 1.5 10 200 880 200 Unit V µA pF nA µA nA µs V , ,,, ,,, ,,, ,,, ,,, current measurement method IC RL Evaporated Al Glass plate (t = 1mm) 1 CNB1302 Reflective Photosensors (Photo Reflectors) IF , IC — Ta 60 60 IF — VF 1.6 Ta = 25˚C VF — Ta IF = 50mA IF , IC (mA) 50 IF 50 IF (mA) VF (V) 1.2 10mA Forward current, collector current 40 40 30 Forward current 30 Forward voltage 1mA 0.8 20 IC 20 0.4 10 10 0 – 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Forward voltage VF (V) Ambient temperature Ta (˚C ) IC — IF 800 VCE = 5V Ta = 25˚C RL = 100Ω d = 1mm 600 d = 1mm Ta = 25˚C IC — VCE 160 IF = 20mA IC — Ta VCC = 5V IF = 10mA RL = 100Ω 120 IC (µA) 600 IC (µA) 400 15mA 300 10mA 8mA 100 6mA 4mA 2mA 400 Relative output current Collector current Collector current IC (%) 500 80 200 200 40 0 0 8 16 24 0 0 2 4 6 8 0 – 40 – 20 0 20 40 60 80 100 Forward current IF (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C ) ICEO — Ta 10 VCE = 10V 10 3 tr , tf — IC 100 VCC = 5V Ta = 25˚C : tr : tf 10 2 RL = 2kΩ 1kΩ 10 100Ω 1 IC — d VCC = 5V Ta = 25˚C IF = 10mA IC (%) tr , tf (µs) 1 80 10 –2 Rise time , fall time 10 –1 Relative output current 60 Dark current 40 10 –3 20 10 –4 – 40 – 20 0 20 40 60 80 100 10 –1 10 –2 10 –1 1 10 0 0 Ambient temperature Ta (˚C ) Collector current IC (mA) 2 ,, , d 2 4 6 8 10 ICEO (µA) Distance d (mm)