ON2175

Reflective Photosensors (Photo Reflectors) CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT ■ Overview CNB1304H is a sensor which consists of a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor which are arranged together in the same direction. It detects the beginning and end of a tape based on changes in the amount of light reflected from a prism which is situated outside of the sensor. (R2.3) 4.0±0.3 φ2.2±0.3 2-φ1.2±0.15 (4-R0.3) Unit: mm 8.3±0.3 6.0±0.15 3.75±0.15 4.0±0.3 8.0 -0.3 7.0±0.3 (C0.3) +0 6.5±0.3 5.0 -0.3 +0 2-φ1.2±0.15 5.0 min. • Fast response • Small size and light weight 3.0±0.3 ■ Features 7±0.3 φ1.2 −0.3 2-0.4±0.2 +0 1.0±0.3 2-0.15 +0.2 -0.1 (3.75) (C0.2) (3.75) 2 4 ■ Absolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse voltage Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation *2 Temperature Operating ambient temperature Storage temperature emitting diode) Forward current Symbol VR IF PD VCEO VECO IC PC T opr Tstg Rating 3 50 75 30 5 20 100 −20 to +85 −30 to + 100 Unit V mA mW V V mA mW °C °C 1: Anode 2: Cathode 3 1 3: Collector 4: Emitter PRSTR104-005 Package (Note) ( ) Dimension is reference Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Forward voltage characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) Transfer Collector current *1 Rise time Fall time Symbol VF IR ICEO IC tr tf IF = 50 mA VR = 3 V VCE = 10 V VCE = 5 V, IF = 20 mA IF = 50 mA, IC = 0.1 mA VCC = 10 V, IC = 0.5 mA, RL = 100 Ω 6 6 100 Conditions Min Typ Max 1.5 10.0 200 1 500 0.5 Unit V µA nA µA V µs characteristics Collector-emitter saturation voltage VCE(sat) Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation 3. *1: IC measurement circuit *2: Switching time measurement circuit (Unit: mm) 1 2.5 1 Sig. in VCC (Input pulse) Sig. out 50 Ω RL (Output pulse) 90% 10% tr tf tr: Rise time tf: Fall time CNB1304H 2- 1.5 prism Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00049BED 1 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. 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At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. 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