PN147

Phototransistors PNZ147 (PN147) Silicon planar type For optical control systems ■ Features • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Fast response: tr , tf = 3 µs (typ.) • Small size designed for easier mounting to printed circuit board 0.5±0.1 1 10.0 min. 3.2±0.3 (φ1.8) 2 3.2±0.3 10.0 min. Unit: mm Type number : cathode mark (Green) 45 ° (0.7) (0.7) Parameter Collector-emitter voltage (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Rating 20 5 20 50 −25 to +85 −30 to +100 Unit V V mA mW °C °C 0.85±0.15 1: Collector 2: Emitter LTTLW102-001 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Photocurrent *1 Symbol ICE(L)1 ICEO λp θ tr tf VCE(sat) *2 Conditions VCE = 10 V, L = 2 lx VCE = 10 V, L = 500 lx VCE = 10 V VCE = 10 V The angle from which photocurrent becomes 50% VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω ICE(L) = 1 mA, L = 1 000 lx Min 3 Typ 12 3.5 0.01 800 24 3 3 0.2 Max (0.15) ■ Absolute Maximum Ratings Ta = 25°C 1.05±0.1 2.8±0.2 R0.9 2.2±0.15 (1.8) 2.8±0.2 (1.8) ICE(L)2 Dark current Peak emission wavelength Half-power angle Rise time *3 Fall time *3 Collector-emitter saturation voltage *1 0.50 0.4±0.1 Unit µA mA µA nm ° 10 10 0.5 µs µs V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 5. *1: Source: Tungsten (color temperature 2 856 K) *2: Rank classification Rank ICE(L) (µA) Q 3.0 to 11.0 R 7.0 to 24.0 S >16.0 *3: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out RL (Output pulse) tr tf 90% 10% tr: Rise time tf: Fall time 50 Ω Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00017BED 1 PNZ147 PC  Ta 60 20 ICE(L)  VCE Ta = 25°C T = 2 856 K 105 ICE(L)  L VCE = 10 V Ta = 25°C T = 2 856 K Collector power dissipation PC (mW) 50 16 Photocurrent ICE(L) (mA) 40 12 1 000 lx 30 Photocurrent ICE(L) (µA) L = 1 500 lx 104 103 8 500 lx 4 20 102 10 250 lx 100 lx 0 −20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 1 10 102 103 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Illuminance L (lx) ICEO  Ta 1 VCE = 10 V 102 ICE(L)  Ta VCE = 10 V T = 2 856 K Spectral sensitivity characteristics 100 VCE = 10 V Ta = 25°C 80 Photocurrent ICE(L) (mA) Dark current ICEO (µA) 10−1 10 Relative sensitivity ∆S (%) 60 10−2 40 1 10−3 20 10−4 −20 0 20 40 60 80 100 10−1 −40 0 40 80 120 0 200 400 600 800 1 000 1 200 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Wavelength λ (nm) Directivity characteristics 0° 10° 100 20° tr  ICE(L) 102 VCC = 10 V Ta = 25°C RL = 1 kΩ 10 500 Ω 100 Ω 1 tf  ICE(L) Relative sensitivity ∆S (%) 80 60 40° 50° 60° 70° 80° 90° 40 20 Rise time tr , Fall time tf (µs) 30° 10−1 10−2 −1 10 1 10 102 Photocurrent ICE(L) (mA) 2 SHE00017BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP