PN150

Phototransistors PNZ150 (PN150) Silicon planar type Unit: mm For optical control systems φ3.5±0.2 4.8±0.3 (2.4) (2.4) 4.5±0.3 Not soldered 4.2±0.3 (2.3) (1.9) ■ Features • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current • Side-view plastic mold type package (2.8) 12.8 min. (1.8) (1.0) 2-0.98±0.2 10.0 min. 2-0.45±0.15 0.45±0.15 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-emitter voltage (Base open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Rating 20 20 100 −25 to +85 −30 to +100 Unit V mA mW °C °C (R1.75) (2.54) (1.2) 1 2 1: Emitter 2: Collector LSTLR102-003 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Photocurrent Dark current Peak emission wavelength Half-power angle Rise time *2 Fall time *2 *1 Symbol ICE(L) ICEO λp θ tr tf VCE(sat) VCE = 10 V VCE = 10 V Conditions VCE = 10 V, L = 500 lx Min 1.0 Typ 3.0 0.01 800 35 4 4 Max Unit mA µA nm ° µs µs 1.00 The angle from which photocurrent becomes 50% VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω ICE(L) = 1 mA, L = 1 000 lx Collector-emitter saturation voltage *1 0.2 0.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be dis regarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out RL (Output pulse) tr tf 90% 10% tr: Rise time tf: Fall time 50 Ω Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00018BED 1 PNZ150 PC  Ta 120 20 ICE(L)  VCE Ta = 25°C T = 2 856 K 102 VCE = 10 V Ta = 25°C T = 2 856 K ICE(L)  L Collector power dissipation PC (mW) 100 16 Photocurrent ICE(L) (mA) 80 12 1 750 lx 1 500 lx 1 250 lx 1 000 lx Photocurrent ICE(L) (mA) L = 2 000 lx 10 1 60 8 750 lx 4 500 lx 250 lx 40 10−1 20 10−2 0 −20 0 20 40 60 80 100 0 100 lx 0 4 8 12 16 20 24 10−3 1 10 102 103 104 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Illuminance L (lx) ICE(L)  Ta 102 VCE = 10 V T = 2 856 K 10 VCE = 10 V ICEO  Ta Spectral sensitivity characteristics 100 VCE = 10 V Ta = 25°C 80 Photocurrent ICE(L) (mA) Dark current ICEO (µA) 1 Relative sensitivity ∆S (%) 60 L = 1 000 lx 10 500 lx 10 −1 40 10 −2 20 1 −40 0 40 80 120 10 −3 −40 0 40 80 120 0 200 400 600 800 1 000 1 200 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Wavelength λ (nm) Directivity characteristics 0° 10° 100 20° 104 tr  ICE(L) VCC = 10 V Ta = 25°C 104 tf  ICE(L) VCC = 10 V Ta = 25°C Relative sensitivity ∆S (%) 80 30° 103 103 Rise time tr (µs) 60 40° 50° 60° 70° 80° 90° 102 RL = 1 kΩ 10 500 Ω 100 Ω Fall time tf (µs) 102 RL = 1 kΩ 10 500 Ω 100 Ω 1 40 20 1 10−1 −2 10 10−1 1 10 102 10−1 −2 10 10−1 1 10 102 Photocurrent ICE(L) (mA) Photocurrent ICE(L) (mA) 2 SHE00018BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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