PN300

PIN Photodiodes PNZ300 (PN300), PNZ300F (PN300F) Silicon planar type For optical control systems ■ Features • Fast response which is well suited to high speed modulated light detection • Wide spectral sensitivity • Low dark current and low noise • Good photo current linearity and wide dynamic sensitivity • Narrow directivity (PNZ300) • Wide derectivity (PNZ300F) PAZ300 6.3±0.3 φ4.6±0.15 Glass lens Unit: mm 12.7 min. 2-φ0.45±0.05 2.54±0.25 1. 0± 2 0. ±3 45° 1. 0± 0. 15 ° 2 1 φ5.75 max. 1: Anode 2: Cathode MTGLR102-001 Package Glass window ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Rating 50 100 −25 to +85 −30 to +100 Unit V mW °C °C PAZ300F 4.5±0.2 φ4.6±0.15 Unit: mm 12.7 min. 2-φ0.45±0.05 2.45±0.25 0 1. .2 ±0 ±3 45° 1. 0 ±0 .1 5 ° 2 1 φ5.75 max. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Dark current Photocurrent *1 PNZ300 PNZ300F Peak emission wavelength Rise time *2 1: Anode 2: Cathode MTGFR102-001 Package Symbol ID IL λp tr tf Ct PNZ300 PNZ300F θ VR = 10 V Conditions VR = 10 V, L = 1 000 lx V R = 10 V VR = 20 V, RL = 50 Ω VR = 10 V, f = 1 MHz The angle from which photocurrent becomes 50% Min Typ 0.1 Max 10 Unit nA µA nm ns ns pF ° 30 5 55 7 800 1 1 7 10 40 Fall time *2 Terminal capacitance Half-power angle Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in λP = 900 nm 50 Ω RL VR (Input pulse) Sig. out (Output pulse) tr tf 90% 10% tr: Rise time tf: Fall time Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2004 SHE00030BED 1 PNZ300F, PNZ300F PD  Ta 120 IL  L 103 VR = 10 V Ta = 25°C T = 2 856 K 102 ID  V R Ta = 25°C 100 Power dissipation PD (mW) 102 80 10 Photocurrent IL (µA) 10 40 1 PN Z3 00 F 60 Dark current ID (nA) PN Z3 00 1 10−1 20 10−1 0 −20 0 20 40 60 80 100 10−2 1 10 102 103 104 10−2 10−1 1 10 102 Ambient temperature Ta (°C) Illuminance L (lx) Reverse voltage VR (V) I L  VR 50 VR = 10 V, Ta = 25°C, T = 2 856 K PNZ300 L = 1 000 lx PNZ300F 30 40 Ct  VR 103 Ta = 25 °C 100 IL  T a VR = 10 V 80 Terminal capacitance Ct (pF) 102 Photocurrent IL (µA) Photocurrent IL (µA) 60 PNZ300 40 10 PNZ300 20 L = 500 lx PNZ300F 1 20 10 L = 100 lx 0 PNZ300 PNZ300F 0 10 20 30 40 50 10−1 −1 10 1 10 102 0 −40 0 40 80 Reverse voltage VR (V) Reverse voltage VR (V) Ambient temperature Ta (°C) ID  T a 103 VR = 10 V Spectral sensitivity characteristics 100 VCE = 10 V Ta = 25°C 100 Directivity characteristics 102 10 Relative sensitivity ∆S (%) Relative sensitivity ∆S (%) 80 80 Dark current ID (nA) 1 40 40 10−1 10−2 20 20 10−3 −40 0 40 80 0 200 400 600 800 1 000 1 200 0 80 40 PNZ300 0 60 60 PNZ300 F 40 80 Ambient temperature Ta (°C) Wavelength λ (nm) Half-power angle θ (°) 2 SHE00030BED PNZ300, PNZ300F fC  R L 103 VR = 10 V Ta = 25°C 102 Cutoff frequency fC (MHz) 10 1 10−1 10−2 10−3 10 102 103 104 105 106 107 Load resistance RL (Ω) SHE00030BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP