Darlington Phototransistors
PNA2602
Darlington Phototransistor
Unit : mm
For optical control systems Features
Darlington output, high sensitivity Easy to combine light emission and photodetection on same printed circuit board Small size, thin side-view type package
4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4
4.2±0.3 2.3 1.9
2.8 1.8 1.0
12.8 min. 10.0 min.
2-0.98±0.2 2-0.45±0.15 0.45±0.15
2.54 R1.75
1.2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 –25 to +80 –30 to +100 Unit V V mA mW ˚C ˚C
1 2 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage
*1
Symbol ICEO ICE(L) λP θ tr, tf*2 VCE(sat) VCE = 10V
Conditions VCE = 10V, L = 2 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA, RL = 100Ω ICE(L) = 1mA, L = 100 lx*1 lx*1
min 0.2
typ 0.1 1 800 35 100 0.7
max 0.5
Unit µA mA nm deg. µs
1.5
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
,,
,,
50Ω
RL
1
PNA2602
Darlington Phototransistors
PC — Ta
120 32
ICE(L) — VCE
10 3 Ta = 25˚C T = 2856K
ICE(L) — L
ICE(L) (mA)
VCE = 10V Ta = 25˚C T = 2856K
PC (mW)
100
ICE(L) (mA)
PC = 100mW 24
10 2
Collector power dissipation
80
Collector photo current
L = 30 lx 16 20 lx 10 lx 8 5 lx 2 lx 1 lx 0 4 8 12 16 20 24
Collector photo current
60
10
40
1
20
0 – 20
0
20
40
60
80
100
0
10 –1
1
10
10 2
10 3
Ambient temperature
Ta (˚C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICE(L) — Ta
10 VCE = 10V T = 2856K 10 2
ICEO — Ta
100 VCE = 10V
Spectral sensitivity characteristics
Ta = 25˚C
ICE(L) (mA)
10 1
ICEO (µA)
Collector photo current
10 –1
Relative sensitivity
0 20 40 60 80 100
1
S (%)
10 –2 10 –3 – 20
80
60
Dark current
40
10 –1
20
10 –2 – 40
0
40
80
120
0 200
400
600
800
1000
1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength λ (nm)
Directivity characteristics
0˚ 100 Sig.IN 90 80 70 60 50 40 30 20 10˚ 20˚
tr — ICE(L)
VCC Sig. OUT RL 90% 10% Sig.IN Sig. OUT 50Ω
tf — ICE(L)
VCC Sig. OUT RL 90% 10%
Relative sensitivity S (%)
,, ,
30˚
tr (µs)
40˚ 50˚ 60˚ 70˚ 80˚ 90˚
Rise time
Fall time
10 3
tf (µs)
RL = 1kΩ 500Ω
,
10 3 10 2 10 10 –2 10 –1
Sig. OUT 50Ω
tr
td
tf
tr
td
tf
RL = 1kΩ
500Ω
10 2
100Ω
100Ω VCC = 10V Ta = 25˚C 10 –1 1 10
10 10 –2
VCC = 10V Ta = 25˚C 1 10
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
2
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