PNZ102F

Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors PNA1401LF Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 21 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max. Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature * Symbol VCEO VCBO* VECO VEBO* IC PC Topr Tstg Ratings 30 40 5 5 50 150 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 4.5±0.2 1: Emitter 2: Collector PNZ102F ø4.6±0.15 Unit : mm Glass window 12.7 min. 3-ø0.45±0.05 2.54±0.25 PNZ102F only 1. 0 0± .2 5 45± 0± 0. 1 3˚ 1. 3 21 1: Emitter 2: Base 3: Collector ø5.75 max. 1 PNA1401LF, PNZ102F Phototransistors Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wave length Acceptance half angle Response time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr, tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 100 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA, RL = 100Ω L = 500 lx*1 PNA1401LF ICE(L) = 0.1mA PNZ102F ICE(L) = 0.1mA min 0.1 typ 5 0.3 800 40 3 0.2 max 300 Unit nA mA nm deg. µs 0.4 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf ,,, , ,, 50Ω RL td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) PC — Ta 200 2.0 ICE(L) — VCE 900 lx 800 lx 700 lx 1000 lx 10 ICE(L) — L ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K PC (mW) 160 ICE(L) (mA) 600 lx 1.6 500 lx 400 lx 1.2 300 lx 1 Collector power dissipation Collector photo current Collector photo current 120 10 –1 80 0.8 200 lx 100 lx 10 –2 40 0.4 L = 50 lx 0 – 20 0 20 40 60 80 100 0 0 8 16 24 32 10 –3 1 10 10 2 10 3 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) 2 Phototransistors PNA1401LF, PNZ102F ICEO — Ta 10 3 VCE = 10V 10 ICE(L) — Ta VCE = 10V T = 2856K 100 Spectral sensitivity characteristics Ta = 25˚C ICE(L) (mA) ICEO (nA) 10 2 I = 500 lx 1 100 lx S (%) Relative sensitivity 120 80 Dark current 10 Collector photo current 60 40 10 –1 1 20 10 –1 – 40 0 40 80 120 10 –2 – 40 0 40 80 0 200 400 600 800 1000 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 100 90 80 70 60 50 40 30 20 10˚ 20˚ 10 3 tr — ICE(L) VCC = 10V Ta = 25˚C 10 3 tf — ICE(L) VCC = 10V Ta = 25˚C S (%) 30˚ 10 2 10 2 Relative sensitivity tr (µs) 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 10 500Ω 100Ω tf (µs) RL = 1kΩ RL = 1kΩ 10 500Ω 100Ω 1 Rise time 1 10 –1 Fall time 10 2 10 –1 10 –2 10 –2 10 –1 1 10 10 –2 10 –2 10 –1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 3