PNZ107F

Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors PNZ107F Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 µs (typ.) Signal mixing capability using base pin (PNZ108F) TO-18 standard type package 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 21 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature * ø5.75 max. Symbol VCEO VCBO * Ratings 20 30 3 5 30 150 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 4.5±0.2 1: Emitter 2: Collector PNZ108F ø4.6±0.15 Unit : mm Glass window VECO VEBO* IC PC Topr Tstg 12.7 min. 3-ø0.45±0.05 2.54±0.25 PNZ108F only 1. 0 0± .2 5 45± 0± 0. 1 3˚ 1. 3 21 1: Emitter 2: Base 3: Collector ø5.75 max. 1 PNZ107F, PNZ108F Phototransistors Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 100 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 min 0.4 typ 0.05 900 40 8 9 0.3 max 2 4 Unit µA mA nm deg. µs µs 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50Ω RL PC — Ta 200 12 ICE(L) — VCE 10 2 ICE(L) — L ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K PC (mW) ICE(L) (mA) 160 10 Ta = 25˚C 1000 lx T = 2856K 900 lx L= 800 lx 700 lx 1500 lx 600 lx 500 lx 400 lx 10 Collector power dissipation 8 Collector photo current Collector photo current 120 6 1 300 lx 80 4 200 lx 10 –1 40 2 100 lx 50 lx 10 lx 24 0 – 20 0 20 40 60 80 100 0 0 4 8 12 16 20 10 –2 1 10 10 2 10 3 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) 2 Phototransistors PNZ107F, PNZ108F ICEO — Ta 10 2 VCE = 10V 10 ICE(L) — Ta ICE(L) (mA) VCE = 10V L = 100 lx T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25˚C 10 ICEO (µA) Collector photo current Dark current 1 10 –1 Relative sensitivity 1 S (%) 10 –1 – 40 80 60 40 10 –2 20 10 –3 – 20 0 20 40 60 80 100 0 40 80 120 0 200 400 600 800 1000 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 100 90 80 70 60 50 40 30 20 10˚ 20˚ 10 4 tr — ICE(L) VCC = 10V Ta = 25˚C 10 4 tf — ICE(L) VCC = 10V Ta = 25˚C S (%) 30˚ 10 3 10 3 Relative sensitivity tr (µs) 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 10 2 tf (µs) RL = 1kΩ 500Ω 100Ω 10 2 RL = 1kΩ 10 500Ω 100Ω 1 Rise time 10 1 10 –1 10 –2 Fall time 10 2 10 –1 1 10 10 –1 10 –2 10 –1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 3