PNZ108CL

Phototransistors PNZ108CL Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 1. 0± 0. 15 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 0 0± 1. 5 .1 Small size (low in height) package 45± 3˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 20 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C ø5.75 max. ø4.2±0.2 3 1 2 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) *3 Conditions VCE = 10V VCE = 10V, L = 500 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 lx*1 min 3.5 typ 0.05 6 900 80 5 6 0.3 max 2 Unit µA mA nm deg. µs µs 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, *3 I CE(L) 50Ω RL Classifications Class ICE(L) (mA) Q 3.5 to 6.0 R 5.0 to 9.1 S > 7.5 Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D). 1 Phototransistors PNZ108CL PC — Ta 120 20 ICE(L) — VCE Ta = 25˚C T = 2856K 10 2 L = 1500 lx ICE(L) — L ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K PC (mW) 100 ICE(L) (mA) 16 1000 lx 12 10 Collector power dissipation 80 Collector photo current Collector photo current 750 lx 60 1 8 500 lx 40 10 –1 20 4 250 lx 100 lx 0 – 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 –2 1 10 10 2 10 3 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO — Ta 10 2 VCE = 10V 10 2 ICE(L) — Ta ICE(L) (mA) VCE = 10V L = 500 lx T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25˚C ICEO (µA) 10 10 S (%) Relative sensitivity 0 40 80 120 80 Dark current 1 Collector photo current 60 40 1 10 –1 20 10 –2 – 20 0 20 40 60 80 100 10 –1 – 40 0 200 400 600 800 1000 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 100 80 60 40 20 10˚ 20˚ 30˚ 40˚ 10 4 tr — ICE(L) VCC = 10V Ta = 25˚C 10 4 tf — ICE(L) VCC = 10V Ta = 25˚C Relative sensitivity S (%) 50˚ 60˚ 10 3 10 3 tr (µs) 70˚ 80˚ 90˚ 10 2 RL = 1kΩ 10 500Ω 100Ω 1 tf (µs) 10 2 RL = 1kΩ 10 500Ω 100Ω 1 Rise time 10 –1 10 –2 Fall time 10 2 10 –1 1 10 10 –1 10 –2 10 –1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2