PNZ109CL

Phototransistors PNZ109CL Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 1. 0± 0. 15 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 0 0± 1. 5 .1 Small size (low in height) package ø5.75 max. ø4.2±0.2 45± Resin to cutoff visible light is used 3˚ 3 1 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 20 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wave length Acceptance half angle Rise time Fall time Collector saturation voltage *1 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 500 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 min 2.5 typ 0.05 4 900 80 5 6 0.3 max 2 Unit µA mA nm deg. µs µs 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50Ω RL 1 Phototransistors PNZ109CL PC — Ta 120 20 ICE(L) — VCE Ta = 25˚C T = 2856K ICE(L) — L 10 3 PC (mW) ICE(L) (mA) 100 16 200 lx ICE(L) (mA) 500 lx 300 lx VCE = 10V Ta = 25˚C T = 2856K 10 2 Collector power dissipation 80 Collector photo current Collector photo current 12 100 lx 8 10 60 1 40 50 lx 4 L = 10 lx 20 10 –1 0 – 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 –2 1 10 10 2 10 3 10 4 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO — Ta 10 2 VCE = 10V 10 ICE(L) — Ta ICE(L) (mA) VCE = 10V L = 100 lx T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25˚C 10 ICEO (µA) Collector photo current Dark current 1 10 –1 Relative sensitivity 1 S (%) 10 –1 – 40 80 60 40 10 –2 20 10 –3 – 20 0 20 40 60 80 100 0 40 80 120 0 600 700 800 900 1000 1100 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 100 80 60 40 20 10˚ 20˚ 30˚ 40˚ 10 4 tr — ICE(L) VCC = 10V Ta = 25˚C 10 4 tf — ICE(L) VCC = 10V Ta = 25˚C Relative sensitivity S (%) 50˚ 60˚ 10 3 10 3 tr (µs) 70˚ 80˚ 90˚ 10 2 RL = 1kΩ 10 500Ω 100Ω 1 tf (µs) 10 2 RL = 1kΩ 10 500Ω 100Ω 1 Rise time 10 –1 10 –2 Fall time 10 2 10 –1 1 10 10 –1 10 –2 10 –1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2