PNZ109L

Phototransistors PNZ109L Silicon NPN Phototransistor ø4.6±0.15 Unit : mm Glass lens For optical control systems Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx) 12.7 min. 6.3±0.3 Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) Fast response : tr = 5 µs (typ.) Long lifetime, high reliability 3-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 30 150 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 3 21 1: Emitter 2: Base 2: Collector ø5.75 max. Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf *2 Conditions VCE = 10V VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 500 lx*1 lx*1 min 3.5 typ 0.05 900 10 5 6 0.3 max 2 Unit µA mA nm deg. µs µs VCE(sat) 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50Ω RL 1 Phototransistors PNZ109L PC — Ta 200 20 ICE(L) — VCE Ta = 25˚C 500 lx T = 2856K 300 lx 200 lx 10 3 ICE(L) — L ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K PC (mW) 160 ICE(L) (mA) 1000 lx 16 10 2 Collector power dissipation Collector photo current 100 lx 8 50 lx 4 L = 10 lx 80 Collector photo current 120 12 10 1 40 10 –1 0 – 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 –2 1 10 10 2 10 3 10 4 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO — Ta 10 2 VCE = 10V 10 2 ICE(L) — Ta ICE(L) (mA) VCE = 10V L = 100 lx T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25˚C 10 ICEO (µA) Collector photo current Dark current 10 10 –1 Relative sensitivity 0 40 80 120 1 S (%) 1 – 40 80 60 40 10 –2 20 10 –3 – 20 0 20 40 60 80 100 0 600 700 800 900 1000 1100 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 100 90 80 70 60 50 40 30 10˚ 20˚ 10 4 tr — ICE(L) VCC = 10V Ta = 25˚C 10 4 tf — ICE(L) VCC = 10V Ta = 25˚C Relative sensitivity S (%) 30˚ 10 3 10 3 tr (µs) 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 10 2 RL = 1kΩ 10 500Ω 100Ω 1 tf (µs) 10 2 RL = 1kΩ 10 500Ω 100Ω 1 Rise time 10 –1 10 –2 Fall time 10 2 10 –1 1 10 10 –1 10 –2 10 –1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2