PNZ121S

Phototransistors PNZ121S Silicon NPN Phototransistor Unit : mm For optical control systems Features Stable operations in high illuminance region Low dark current 12.5 min. 4.1±0.3 2.0±0.2 ø3.0±0.2 Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time *1 Symbol ICEO ICE(L) λP θ tr*2 tf*2 *3 Conditions VCE = 10V VCE = 10V, L = 1000 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω lx*1 min 120 typ 1 800 30 1 1.3 max 100 280 Unit nA µA nm deg. µs µs Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, *3 I CE(L) 50Ω Classifications Class Q 120 to180 Black R 160 to 200 Red S 180 to 235 Green T 210 to 280 — ICE(L) (µA) Color indication 1 Phototransistors PNZ121S PC — Ta 60 600 ICE(L) — VCE 10 4 Ta = 25˚C T = 2856K ICE(L) — L ICE(L) (µA) VCE = 10V Ta = 25˚C T = 2856K PC (mW) 50 ICE(L) (µA) 500 L =2000 lx 1750 lx 300 1500 lx 1250 lx 200 1000 lx 750 lx 100 500 lx 250 lx 10 3 Collector power dissipation 40 400 Collector photo current Collector photo current 30 10 2 20 10 10 0 – 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 1 10 10 2 10 3 10 4 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO — Ta 10 3 VCE = 10V 10 3 ICE(L) — Ta VCE = 10V T = 2856K L = 1500 lx 100 Spectral sensitivity characteristics VCE = 10V Ta = 25˚C ICE(L) (µA) ICEO (nA) 10 2 1000 lx S (%) Relative sensitivity 100 80 Dark current 10 Collector photo current 60 10 2 40 1 20 10 –1 – 20 0 20 40 60 80 100 10 – 20 0 20 40 60 80 0 200 400 600 800 1000 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 100 10˚ 20˚ 10 2 tr — ICE(L) VCC = 10V Ta = 25˚C 10 2 tf — ICE(L) VCC = 10V Ta = 25˚C 80 70 60 50 40 30 20 Relative sensitivity S (%) 90 30˚ 10 10 tr (µs) 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ RL = 1kΩ 1 500Ω 100Ω tf (µs) RL = 1kΩ 1 500Ω 100Ω Rise time 10 –1 Fall time 10 –1 10 –2 10 –2 10 –1 1 10 10 –2 10 –2 10 –1 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2