PNZ1270

Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems 0.5±0.1 Features High sensitivity Good collector photo current linearity with respect to optical power input Small size designed for easier mounting to printed circuit board 2.8±0.2 1.05±0.1 Type number : Emitter mark (Blue) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 1 45 ˚ 2.2±0.15 (0.7) 0.15 (0.7) 1.8 2.8±0.2 1.8 Fast response : tr = 2.5 µs (typ.) R0.9 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 20 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 0.85 ± 0.15 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time *1 *2 Symbol ICEO ICE(L)*3 λP θ tr*2 tf*2 VCE = 10V Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω min 0.8 typ 1 800 14 2.5 3.5 max 100 19.2 Unit nA mA nm deg. µs µs Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50Ω *3 I CE(L) Classifications Class ICE(L) (mA) Q 0.8 to 2.4 R 1.6 to 4.8 S 3.2 to 9.6 T 6.4 to 19.2 0.4±0.1 1 Phototransistors PNZ1270 PC — Ta 60 5 ICE(L) — VCE Ta = 25˚C T = 2856K L =1000 lx 10 5 ICE(L) — L ICE(L) (µA) VCE = 10V Ta = 25˚C T = 2856K PC (mW) 50 ICE(L) (mA) 4 10 4 Collector power dissipation 40 Collector photo current Collector photo current 3 30 10 3 2 500 lx 20 10 1 250 lx 100 lx 10 2 0 – 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 10 10 2 10 3 10 4 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO — Ta 10 3 VCE = 10V 10 5 ICE(L) — Ta VCE = 10V T = 2856K 100 Spectral sensitivity characteristics VCE = 10V Ta = 25˚C ICE(L) (mA) ICEO (nA) 10 2 10 4 S (%) Relative sensitivity 0 40 80 120 80 Dark current 10 Collector photo current 60 40 10 3 1 20 10 –1 – 40 0 40 80 120 10 2 – 40 0 200 400 600 800 1000 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 100 90 80 70 60 50 40 30 20 10˚ 20˚ 10 2 tr — ICE(L) VCE = 10V Ta = 25˚C 10 2 tf — ICE(L) VCE = 10V Ta = 25˚C Relative sensitivity S (%) 30˚ 10 10 tr (µs) tf (µs) RL = 1kΩ 500Ω 1 100Ω RL = 1kΩ 500Ω 100Ω 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ Rise time 10 –1 Fall time 1 10 –1 10 –2 10 –2 10 –1 1 10 10 –2 10 –2 10 –1 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2