PNZ263L

Darlington Phototransistors PNZ263L Darlington Phototransistor 0.8 max. Gate the rest Unit : mm 3.0±0.3 ø1.1 R0.5 Not soldered 2.15 max. For optical control systems Features Darlington output, high sensitivity Small size, thin side-view type package Adoption of visible light cutoff resin 1.95±0.25 1.4±0.2 0.9 0.5 28.0 +1.0 –0.5 14.3 0.8 1.35 3.5±0.3 1.1 2.4 1.1 0.8 2-0.8 max. 0.3±0.15 (8.9) 2.4 2-0.8 max. 2-0.5±0.15 2 1 2.54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 –25 to +80 –30 to +100 Unit V V mA mW ˚C ˚C 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 *2 Symbol ICEO SIR*1 λP θ tr, tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, H = 3.75 µW/cm2 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, IC = 1mA, RL = 100Ω IC = 100µA, H = 3.75 µW/cm2 min 60 typ 0.1 200 850 25 150 0.7 max 0.5 Unit µA µA nm deg. µs 1.5 V Measurements were made using infrared light (λ = 940 nm) as a light source. Switching time measuring circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,, ,, 50Ω RL 1 PNZ263L Darlington Phototransistors PC — Ta 120 32 ICE(L) — VCE 10 2 Ta = 25˚C T = 2856K ICE(L) — L ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K PC (mW) 100 ICE(L) (mA) PC = 100mW 24 10 Collector power dissipation 80 Collector photo current Collector photo current 60 16 L =100 lx 1 40 8 50 lx 30 lx 10 lx 10 –1 20 0 – 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 –2 1 10 10 2 10 3 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICE(L) — Ta 10 VCE = 10V T = 2856K 10 2 ICEO — Ta VCE = 10V 100 Spectral sensitivity characteristics VCE = 10V Ta = 25˚C ICE(L) (mA) 1 ICEO (µA) 10 S (%) Relative sensitivity 0 20 40 60 80 100 80 Collector photo current 60 Dark current 1 40 10 –1 10 –1 20 10 –2 – 40 0 40 80 120 10 –2 – 20 0 600 700 800 900 1000 1100 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 120 10˚ 20˚ 30˚ 40˚ Sig.IN Sig. OUT 50Ω tr — ICE(L) VCC Sig. OUT RL 90% 10% Sig.IN Sig. OUT 50Ω tf — ICE(L) VCC Sig. OUT RL 90% 10% ,, , 80 60 40 Relative sensitivity S (%) 50˚ 60˚ 70˚ 80˚ 90˚ tr (µs) Rise time 500Ω 100Ω Fall time 10 3 RL = 1kΩ tf (µs) , 10 3 10 2 10 10 –2 10 –1 tr td tf tr td tf RL = 1kΩ 500Ω 100Ω 10 2 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 1 10 VCC = 10V Ta = 25˚C 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2