PNZ312D

PIN Photodiodes PNZ312D Dual Division Silicon PIN Photodiode For optical information systems Features Fast response : tr, tf = 10 ns (typ.) 13.5±1.0 4.0±0.1 1.0±0.3 1.0±0.1 ø3.2 Dep. 0.1(typ.) 10˚ 5.0±0.1 2.54±0.1 4 3 1.8±0.3 1.0±0.2 Unit : mm Good photo current linearity Low dark current : ID = 20 nA (max.) Small size plastic package (flat type) Adoption of visible light cutoff resin A B 4-0.6 +0.1 –0.2 4-0.5±0.1 1 10˚ 2 10˚ 1.0 1.0 10˚ 0.2 +0.1 –0.05 0.6 Auto focus sensor for still cameras and video cameras etc. Distance measuring systems Position sensor for automatic assembly lines Eye sensor for industrial robots 5˚ 5˚ 0.2 Applications 1: Anode A 2: Common Cathode 3: Anode B 4: Common Cathode Note) The PNZ312D package consists of a visible light cutoff resin. Therefore the chips (A and B) shown in the drawing cannot actually be seen. Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 30 –25 to +85 –30 to +100 Unit V mW ˚C ˚C Dimensions of detection area 3.5 1.6 1.6 0.04 Unit : mm 1.35 1.0 A B Electro-Optical Characteristics (Ta = 25˚C) Parameter Reverse voltage (DC) Dark current Photo current Peak sensitivity wavelength Response time Capacitance between pins Acceptance half angle Symbol VR ID IL*3 λP tr, tf*2 Ct θ IR = 1 0 µ A VR = 10V VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 1kΩ VR = 10V, f = 1MHz Measured from the optical axis to the half power point 8 12 940 10 5 65 Conditions min 30 20 typ max Unit V nA µA nm ns pF deg. Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values corresponding to individual elements. *1 Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source. *2 Semiconductor laser light source ( λ = 800 nm ) *3 Photo current measurement circuit +10V R1 = R2 R1 R2 ,, ,, , 1 PNZ312D PIN Photodiodes PD — Ta 40 10 3 VR = 10V Ta = 25˚C T = 2856K IL — L 160 140 IL — Ta VR = 10V L = 1000 lx T = 2856K PD (mW) IL (µA) 30 10 2 IL (%) Relative photo current 10 2 10 3 10 4 120 100 80 60 40 20 Power dissipation Photo current 20 10 10 1 0 – 25 0 20 40 60 80 100 10 –1 10 0 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Illuminance L (lx) Ambient temperature Ta (˚C ) ID — VR 1 Ta = 25˚C 10 VR = 10V ID — Ta 100 Spectral sensitivity characteristics VR = 10V Ta = 25˚C ID (nA) ID (nA) 1 S (%) Relative sensitivity 0 20 40 60 80 100 80 60 Dark current 10 –1 Dark current 40 10 –1 20 10 –2 0 4 8 12 16 20 24 28 32 10 –2 – 40 – 20 0 200 400 600 800 1000 1200 Reverse voltage VR (V) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 100 10 3 Ct — VR f = 1MHz Ta = 25˚C 10 4 Sig.IN tr , tf — RL VR=10V Sig. OUT RL 90% 10% Ct (pF) S (%) 80 ,, , tr , tf (ns) 10 3 50Ω 10 2 tr td tf Relative sensitivity 10 Rise time, Fall time 60 Capacitance between pins 10 2 40 1 10 20 0 80 40 0 40 80 10 –1 10 –1 1 10 10 2 1 10 –1 Ta = 25˚C 1 10 10 2 Angle θ (deg.) Reverse voltage VR (V) External load resistance RL (kΩ) 2