PNZ313B

PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optical control systems 8.0±0.5 5.0 7.0±0.5 Anode mark ø1.6 Device center Features Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.) Adoption of visible light cutoff resin 13 min. 2.3±0.3 2-1.2±0.15 2-0.6±0.15 0.41±0.15 2 1 5.08±0.25 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 100 –30 to +85 – 40 to +100 Unit V mW ˚C ˚C 2.8±0.3 1: Cathode 2: Anode Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Photo current Peak sensitivity wavelength Response time Response time Capacitance between pins Acceptance half angle *1 *2 Symbol ID IL λP tr, tf *2 Conditions VR = 10V VR = 10V, L = 1000 VR = 10V VR = 10V, RL = 1kΩ VR = 10V, RL = 100kΩ VR = 0V, f = 1MHz Measured from the optical axis to the half power point lx*1 min 15 typ 5 25 960 50 5 70 65 max 50 Unit nA µA nm ns µs pF deg. tr, tf*2 Ct θ Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) Sig.OUT (Output pulse) RL td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) λP = 800nm 50Ω ,,, , ,,, , 1 PIN Photodiodes PNZ313B PD — Ta 120 10 3 VR = 10V Ta = 25˚C T = 2856K IL — L 10 3 VR = 10V ID — Ta 100 PD (mW) IL (µA) 80 Power dissipation Photo current 60 40 1 Dark current 10 2 10 3 10 4 10 ID (nA) 10 2 10 2 10 1 20 0 – 30 0 20 40 60 80 100 10 –1 10 10 –1 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Illuminance L (lx) Ambient temperature Ta (˚C ) IL — Ta 160 140 VR = 10V L = 1000 lx T = 2856K 100 Spectral sensitivity characteristics VR = 10V Ta = 25˚C 100 Directional characteristics Ta = 25˚C IL (%) S (%) 120 100 80 60 40 20 0 – 40 – 20 Relative photo current Relative sensitivity 40 Relative sensitivity 700 800 900 1000 1100 1200 60 S (%) 80 80 60 40 20 20 0 20 40 60 80 100 0 600 0 80 40 0 40 80 Ambient temperature Ta (˚C ) Wavelength λ (nm) Angle θ (deg.) Ct — V R 100 10 2 Sig.IN tr , tf — RL 10 2 VR = 10V Sig. OUT RL 90% 10% ID — VR Ct (pF) ,, 10 50Ω 80 tr , tf (µs) ID (nA) Dark current 10 2 tr td tf Capacitance between pins 10 60 Rise time, Fall time 1 40 1 10 –1 20 0 10 –2 10 –1 1 10 10 2 10 –2 10 –1 1 10 10 –1 0 8 16 24 32 40 48 Reverse voltage VR (V) External load resistance RL (kΩ) Reverse voltage VR (V) 2