PNZ331CL

PIN Photodiodes PNZ331CL PIN Photodiode ø5.4±0.1 ø4.2±0.05 1. 0± 0. 1 Unit : mm 1 0. 0± 1. For optical fiber communication systems Features TO-18 standard type package High coupling capability suitable for plastic fiber High quantum efficiency High-speed response 3.25±0.3 14.2±0.5 2.25±0.1 (0.2) 3-ø0.45±0.04 45± ø2.54±0.25 3˚ 2 3 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 50 –25 to +85 –30 to +100 Unit V mW ˚C ˚C Active region 1: Anode 2: Case 3: Cathode Dimensions of detection area 1.1 0.88 A1 ø0.1 Unit : mm Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Photo current Peak sensitivity wavelength Response time Capacitance between pins Photodetection sensitivity Acceptance half angle Photodetection surface shape Symbol ID IL λP tr, tf*2 Ct R θ D VR = 10V VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 50Ω VR = 10V VR = 10V, λ = 800nm Measured from the optical axis to the half power point Effective detection area 7 Conditions min typ 0.1 14 900 2 3 0.55 70 0.88 max 10 Unit nA µA nm ns pF A/W deg. mm Note 1) Spectral sensitivity: Sensitivity at wavelengths exceeding 400 nm as a percentage of maximum sensitivity is 100% Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles. Note 3) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D) *1 *2 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit (see figure below) Sig.IN VR = 10V (Input pulse) Sig.OUT (Output pulse) RL td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) λP = 800nm 50Ω ,,, , ,,, , 1 PIN Photodiodes PNZ331CL PD — Ta 60 10 2 VR = 10V Ta = 25˚C T = 2856K IL — L 10 2 VR = 10V Ta = 25˚C λ = 800nm IL — P 50 PD (mW) IL (µA) 40 Power dissipation Photo current 30 1 Photo current 10 2 10 3 10 4 IL (µA) 10 10 1 20 10 –1 10 –1 10 0 – 25 0 20 40 60 80 100 10 –2 10 10 –2 10 10 2 10 3 10 4 Ambient temperature Ta (˚C ) Illuminance L (lx) Incident photo power P (µW) ID — VR 1 Ta = 25˚C 10 2 10 3 VR = 10V ID — Ta 160 VR = 10V λ = 800nm R — Ta R (%) Photodetection sensitivity 0 20 40 60 80 100 ID (nA) ID (nA) 120 10 Dark current 10 –1 Dark current 1 80 10 –1 40 10 –2 10 –2 0 8 16 24 32 10 –3 – 40 – 20 0 – 40 – 20 0 20 40 60 80 100 Reverse voltage VR (V) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) IL — Ta 160 Spectral sensitivity characteristics R (%) VR = 10V L = 1000 lx T = 2856K 100 VR = 10V Ta = 25˚C 6 4 80 Frequency characteristics Relative photodetection sensitivity 120 P (dB) Relative power output IL (%) 2 0 –2 –4 –6 –8 Relative photo current 60 80 40 40 20 0 – 40 – 20 0 20 40 60 80 100 0 200 400 600 800 1000 1200 – 10 1 10 10 2 10 3 Ambient temperature Ta (˚C ) Wavelength λ (nm) Frequency f (MHz) 2 PNZ331CL Coupling loss characteristics PIN Photodiodes Coupling loss characteristics Ct — V R 10 2 f = 1MHz Ta = 25˚C 0 LX , LY — X, Y 0 Z = 0mm 1 1 LZ — Z X,Y = 0mm Capacitance between pins Ct (pF) 10 Coupling loss LX , LY (dB) 2 Coupling loss LZ (dB) Z = 0.3mm 2 1 3 Y 4 X Fiber Z ø1mm 3 Y 4 X 5 Fiber Z ø1mm 10 –1 10 –2 10 –1 1 10 10 2 5 – 0.8 – 0.4 0 0.4 0.8 0 0.4 0.8 1.2 1.6 Reverse voltage VR (V) Distance X, Y (mm) Distance Z (mm) 3