GaAs PA Module
UN0231N
RF Power Amplifier Module
Unit : mm
For the preamplifier of the transmitting section in a cellular phone s Features
• High efficiency with super miniature, 0.08 cc package(7.5 × 7.5 × 1.7 mm)
φ 0.8
12
11
10
1 2 3
6 7.3 7.5±0.15 5 4 4.0
s Absolute Maximum Ratings Ta=25°C
Parameter Power supply voltage 1 *1 Power supply voltage 2 Circuit current 1 Circuit current 2 Gate voltage Max input power Allowable power dissipation Case temperature *3 Storage temperature
*3 *1
7
8 (0.9)
9 1.5±0.2 0.59 Tolerance dimension without indication : ±0.3
Symbol VDD1 VDD2 IDD1 IDD2 VGG PIN PD Tcase Tstg
Ratings 6 6 200 600 −4 9 2 −30 to +90 −30 to +120
Unit V V mA mA V dBm W °C °C
1 : PIN 2 : VDD1 3 : VDD2 4 : POUT
4-0.7
2-1.2 4.0 7.5±0.15
5 : GND 6 : VGG 7 : GND 8 : GND PAM01
9 : GND 10 : GND 11 : GND 12 : GND
Marking Symbol : KK
Note) *1 : VGG=−3.5 V *2 : Tcase=25°C *3 : The reverse of the device is solderd to the plate
s Electrical Characteristics VGG=−2.5 V, f=887 MHz to 925 MHz, Ta=25°C±3°C, Nominal : ZS=ZL=50 Ω
Parameter Idle current Gate current
*2, 3 *2, 3
Symbol Iidl IGG IDD1 G1 2fO 3fO VSWR IN ACPR1 ACPR2
Conditions VDD1=VDD2=3.5 V, PIN=No VDD1=VDD2=3.5 V, POUT=26.5 dBm VDD1=VDD2=3.5 V, POUT=26.5 dBm VDD1=VDD2=3.5 V, POUT=26.5 dBm VDD1=VDD2=3.5 V, POUT=26.5 dBm VDD1=VDD2=3.5 V, POUT=26.5 dBm VDD1=VDD2=3.5 V, POUT=26.5 dBm VDD1=VDD2=3.5 V, POUT=26.5 dBm ±900 kHz Detuning, 30 kHz Bandwidth VDD1=VDD2=3.5 V, POUT=26.5 dBm ±1980 kHz Detuning, 30 kHz Bandwidth
min
typ 110
max 140 4
Unit mA mA mA dB
Circuit current 1 *2, 3 Gain 1 2nd harmonics *1, 3 3rd harmonics *1, 3 Voltage standing wave ratio *1, 3 Adjacent channel leakage power suppression 1 *2, 3 Adjacent channel leakage power suppression 2 *2, 3
410 25.0 27.5
450 −30 −30 3 −45 −57
dBc dBc
dBc dBc
Note) *1 : No modulation. *2 : Offset from QPSK signal. *3 : Measurement point of input and output power is made to the terminal of device.
1
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