UN1224

Transistors with built-in Resistor UN1221/1222/1223/1224 Silicon NPN epitaxial planer transistor 6.9±0.1 2.5±0.1 1.0 1.0 3.5±0.1 2.4±0.2 2.0±0.2 0.45±0.05 1.25±0.05 2 1 2.5 Unit: mm 1.5 0.4 1.5 R0.9 R0.9 For digital circuits s Features q q 0.85 s Resistance by Part Number q q q q 0.55±0.1 UN1221 UN1222 UN1223 UN1224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (Ta=25˚C) Ratings 50 50 500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C 3 2.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 C B R2 E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current UN1221 UN1222 UN1223/1224 (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL fT R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω VCB = 10V, IE = –50mA, f = 200MHz (–30%) 200 2.2 4.7 10 R1/R2 0.8 1.0 0.22 1.2 (+30%) kΩ 4.9 0.2 50 50 40 50 60 0.25 V V V MHz min typ max 1 1 5 2 1 V V mA Unit µA µA Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN1221 UN1222 UN1223/1224 Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance UN1221/1224 UN1222 UN1223 Resistance ratio UN1224 4.1±0.2 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 7 4.5±0.1 1 Transistors with built-in Resistor Common characteristics chart PT — Ta 800 UN1221/1222/1223/1224 Total power dissipation PT (mW) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN1221 IC — VCE 300 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE=10V IB=1.0mA 250 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 1 3 10 30 100 300 1000 Collector current IC (mA) 0.9mA 200 0.8mA 0.7mA 150 0.6mA 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0 0 2 4 6 8 0.1mA 10 12 Forward current transfer ratio hFE 300 Ta=75˚C 200 25˚C 100 –25˚C –25˚C 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 24 10000 f=1MHz IE=0 Ta=25˚C 3000 IO — VIN VO=5V Ta=25˚C VIN — IO 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 20 Output current IO (µA) 16 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 12 8 4 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 Transistors with built-in Resistor Characteristics charts of UN1222 IC — VCE 300 100 UN1221/1222/1223/1224 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 200 VCE=10V hFE — IC Forward current transfer ratio hFE 30 10 3 1 0.3 0.1 0.03 0.01 –25˚C Ta=75˚C 250 Ta=75˚C 150 25˚C Collector current IC (mA) IB=1.0mA 200 0.9mA 0.8mA 150 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0.1mA 0 0 2 4 6 8 10 12 100 –25˚C 25˚C 50 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 12 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C VIN — IO 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 10 Output current IO (µA) 8 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 6 4 2 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN1223 IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 200 VCE=10V Ta=75˚C 25˚C 150 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 25˚C 200 160 IB=1.0mA 0.9mA 0.8mA Forward current transfer ratio hFE Collector current IC (mA) 120 0.7mA 0.6mA 80 0.5mA 0.4mA 40 0.3mA 0.2mA 0.1mA 0 0 2 4 6 8 10 12 Ta=75˚C 100 –25˚C 50 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 3 Transistors with built-in Resistor Cob — VCB 12 UN1221/1222/1223/1224 IO — VIN VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 10 f=1MHz IE=0 Ta=25˚C 10000 3000 Output current IO (µA) 8 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 6 4 2 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN1224 IC — VCE 300 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 200 VCE=10V hFE — IC 250 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 Forward current transfer ratio hFE Ta=75˚C 150 Collector current IC (mA) 25˚C 200 IB=1.0mA 0.9mA 0.8mA –25˚C 100 150 0.7mA 0.6mA 0.5mA 0.4mA 100 50 50 0.3mA 0.2mA 0.1mA –25˚C 0 0 2 4 6 8 10 12 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 12 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 1000 300 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 10 Output current IO (µA) 8 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 100 30 10 3 1 0.3 0.1 0.1 6 4 2 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4