Transistors with built-in Resistor
UN1231/1231A
Silicon NPN epitaxial planer transistor
Unit: mm
6.9±0.1 2.5±0.1 1.0
For amplification of the low frequency
0.4
1.5 1.5 R0.9 R0.9
1.0±0.1
q
0.85
0.55±0.1
0.45±0.05
s Absolute Maximum Ratings
Parameter Collector to base voltage UN1231 UN1231A Symbol VCBO VCEO IC ICP PT* Tj Tstg
(Ta=25˚C)
Ratings 20 60 20 50 0.7 1.5 1.0 150 –55 to +150 Unit
3
2
1
2.5
2.5
V
UN1231 Collector to emitter voltage UN1231A Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
1:Base 2:Collector 3:Emitter M Type Mold Package
V A A W ˚C ˚C
R1(1kΩ)
Internal Connection
1.25±0.05
C
B
R2 (47kΩ)
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion.
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage UN1231 UN1231A UN1231 UN1231A
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) R1 R1/R2 Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 VEB = 14V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = 150mA* IC = 100mA, IB = 5mA* 0.7 1 0.021 *Pulse measurement 20 60 20 50 800 2100 0.4 1.3 V kΩ min typ max 1 10 0.5 Unit µA µA mA V
Collector to emitter voltage
4.1±0.2
q
2.4±0.2 2.0±0.2
q
High forward current transfer ratio hFE. M type mold package. Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
R 0. 7
4.5±0.1
s Features
3.5±0.1
1.0
V
Forward current transfer ratio Collector to emitter saturation voltage Input resistance Resistance ratio
1
Transistors with built-in Resistor
PT — Ta
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion.
UN1231/1231A
IC — VCE VCE(sat) — IC
100
1.2
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C 1.0 IB=1.2mA 1.0mA 0.8 0.8mA 0.6mA 0.6 0.4mA 0.4 0.2mA 0.2
IC/IB=100
Total power dissipation PT (W)
30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 25˚C Ta=75˚C –25˚C
Collector current IC (A)
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
hFE — IC
2400 30
Cob — VCB
Collector output capacitance Cob (pF)
10 VCE=10V
Forward current transfer ratio hFE
2000
25
1600 25˚C 1200
Ta=75˚C
20
15
–25˚C 800
10
400
5
0 0.01 0.03
0.1
0.3
1
3
0 0.1
0.3
1
3
10
30
100
Collector current IC
(A)
Collector to base voltage
VCB (V)
2
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