UN2116

Transistors with built-in Resistor UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits 0.65±0.15 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 q q q q q q q q q q q q q q q q q q q q UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2119 UN2110 UN211D UN211E UN211F UN211H UN211L UN211M UN211N UN211T UN211V UN211Z Marking Symbol (R1) 6A 10kΩ 6B 22kΩ 6C 47kΩ 6D 10kΩ 6E 10kΩ 6F 4.7kΩ 6H 22kΩ 6I 0.51kΩ 6K 1kΩ 6L 47kΩ 6M 47kΩ 6N 47kΩ 6O 4.7kΩ 6P 2.2kΩ 6Q 4.7kΩ EI 2.2kΩ EW 4.7kΩ EY 22kΩ FC 2.2kΩ FE 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 1.1 –0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0.8 EIAJ:SC-59 Mini Type Package Internal Connection R1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 200 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.16 –0.06 +0.2 +0.1 s Resistance by Part Number 0.4 –0.05 +0.1 1 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z s Electrical Characteristics Parameter Collector cutoff current UN2111 UN2112/2114/211E/211D/211M/211N/211T UN2113 Emitter cutoff current UN2115/2116/2117/2110 UN211F/211H UN2119 UN2118/211L/211V UN211Z Collector to base voltage Collector to emitter voltage UN2111 UN2112/211E UN2113/2114/211M Forward current transfer ratio UN2115*/2116*/2117*/2110* UN2119/211F/211D/211H UN2118/211L UN211N/211T UN211V UN211Z Collector to emitter saturation voltage UN211V Output voltage high level Output voltage low level UN2113 UN211D UN211E Transition frequency UN2111/2114/2115 UN2112/2117/211T Input resistance UN2113/2110/211D/211E (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 – 0.4 VCBO VCEO IC = –10mA, IE = 0 IC = –2mA, IB = 0 –50 –50 35 60 80 160 hFE VCE = –10V, IC = –5mA 30 20 80 6 60 VCE(sat) VOH IC = –10mA, IB = – 0.3mA IC = –10mA, IB = –1.5mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCC = –5V, VB = –10V, RL = 1kΩ VCC = –5V, VB = –6V, RL = 1kΩ fT VCB = –10V, IE = 1mA, f = 200MHz 80 10 22 47 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 MHz V – 0.07 400 20 200 – 0.25 – 0.25 V V V 460 V V mA Unit µA µA UN2116/211F/211L/211N/211Z R1 UN2118 UN2119 UN211H/211M/211V * hFE rank classification (UN2115/2116/2117/2110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z s Electrical Characteristics (continued) Parameter UN2111/2112/2113/211L UN2114 UN2118/2119 UN211D Resistance ratio UN211E UN211F/211T UN211H UN211M UN211N UN211V UN211Z R1/R2 Symbol (Ta=25˚C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 0.17 0.22 0.047 0.1 1.0 0.21 0.27 max 1.2 0.25 0.12 Unit 3 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Common characteristics chart PT — Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN2111 IC — VCE –160 –140 IB=–1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE= –10V hFE — IC Ta=75˚C –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Collector current IC (mA) –0.9mA –120 –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Forward current transfer ratio hFE 25˚C 120 –25˚C 80 25˚C 40 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN2112 IC — VCE –160 –140 Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 –0.4mA –0.3mA –0.2mA –0.1mA –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE — IC 400 VCE= –10V –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Forward current transfer ratio hFE Collector current IC (mA) –120 –100 300 Ta=75˚C 200 25˚C –25˚C 100 25˚C Ta=75˚C –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN2113 IC — VCE –160 IB=–1.0mA –140 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Forward current transfer ratio hFE 300 Ta=75˚C 25˚C 200 –25˚C –0.4mA –0.3mA –0.2mA 25˚C 100 –0.1mA –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN2114 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V IB=–1.0mA –30 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 25˚C Ta=75˚C Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA Forward current transfer ratio hFE –140 300 Ta=75˚C 200 25˚C –25˚C 100 –8 –10 –12 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –1000 –300 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –100 –30 –10 –3 –1 –0.3 –0.1 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN2115 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V Collector current IC (mA) –120 –100 –80 –60 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 25˚C Ta=75˚C Forward current transfer ratio hFE –140 IB=–1.0mA –30 300 Ta=75˚C 200 25˚C –25˚C 100 –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 3 2 1 –0.03 –0.01 –0.1 –0.3 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN2116 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C hFE — IC VCE= –10V Collector current IC (mA) –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –8 Forward current transfer ratio hFE –140 IB=–1.0mA 300 Ta=75˚C –0.4mA –0.3mA –0.2mA 200 25˚C –25˚C 100 –0.1mA –25˚C –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 7 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO=–0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN2117 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V –100 Collector current IC (mA) –80 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C Forward current transfer ratio hFE –30 300 –60 –0.3mA –0.2mA –20 –0.1mA 200 Ta=75˚C –40 25˚C 100 –25˚C 0 0 –2 –4 –6 –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 IO — VIN f=1MHz IE=0 Ta=25˚C VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) –3000 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN2118 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Forward current transfer ratio hFE Collector current IC (mA) 120 Ta=75˚C 80 25˚C –25˚C 40 –80 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN2119 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C hFE — IC VCE= –10V –200 Forward current transfer ratio hFE Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA 120 Ta=75˚C 80 25˚C –25˚C –120 Ta=75˚C –80 –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –40 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 9 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN2110 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE= –10V –30 –10 –3 –1 Ta=75˚C –0.3 –0.1 –0.03 –25˚C 25˚C Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA –60 –0.2mA –40 –0.1mA –20 300 Ta=75˚C 200 25˚C –25˚C 100 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN211D IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 160 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) –50 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C Ta=75˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Ta=25˚C Collector current IC (mA) 120 Ta=75˚C –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –0.1mA –10 25˚C 80 –25˚C –20 40 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –300 –100 –30 –10 –3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN211E IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) –50 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Ta=25˚C –30 Collector current IC (mA) 300 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –0.2mA Ta=75˚C 25˚C 200 Ta=75˚C 100 25˚C –25˚C –20 –0.1mA –10 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 11 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN211F IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Forward current transfer ratio hFE 120 Ta=75˚C 25˚C 80 –25˚C –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –25˚C 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN211H IC — VCE –120 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 Forward current transfer ratio hFE 200 Collector current IC (mA) –10 –80 IB=–0.5mA –0.4mA 160 Ta=75˚C 120 25˚C 80 –25˚C 40 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –3 –10 –30 –100 –300 –1000 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN211L IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –200 Forward current transfer ratio hFE –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –1 Ta=75˚C 25˚C –25˚C 200 Collector current IC (mA) –160 IB=–1.0mA –0.8mA –80 –0.6mA –0.4mA –0.2mA 0 0 –2 –4 –6 –8 –10 –12 160 –120 120 Ta=75˚C 25˚C –25˚C 80 –40 40 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 13 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN211M IC — VCE 240 –10 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 500 VCE= –10V –3 –1 –0.3 –0.1 –0.03 –0.01 25˚C Ta=75˚C 200 Forward current transfer ratio hFE Collector current IC (mA) 160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA 400 300 120 200 Ta=75˚C 25˚C –25˚C 80 –0.5mA –0.4mA –0.3mA –25˚C 40 100 –0.2mA –0.1mA –0.003 –0.001 –1 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 10 IO — VIN 10–4 f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 Collector output capacitance Cob (pF) VO=–0.2V Ta=25˚C 8 Output current IO (µA) Input voltage VIN (V) 10–3 –10 –3 –1 –0.3 –0.1 –0.03 6 10–2 4 10–1 2 0 –0.1 –0.3 –1 –3 –10 –30 –100 1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 14 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN211N IC — VCE –200 Ta=25˚C –175 VCE(sat) — IC –10 hFE — IC IC/IB=10 300 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C 150 Collector current IC (mA) –150 –125 –100 –75 –50 –25 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –1 Ta=75˚C –0.1 25˚C –25˚C –25˚C 100 50 0 0 –2 –4 –6 –8 –10 –12 –0.01 –1 –10 –100 –1000 0 –1 –10 –100 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 VO=–5V Ta=25˚C VIN — IO –100 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 3 –100 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –1 2 –10 –0.1 1 0 –1 –10 –100 –1 –0.4 –0.01 –0.1 –1 –10 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN211T IC — VCE –200 Ta=25˚C –175 VCE(sat) — IC –10 hFE — IC IC/IB=10 300 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C 150 –25˚C 100 Collector current IC (mA) –150 IB=–1.0mA –125 –100 –75 –50 –25 0 0 –2 –4 –6 –8 –10 –12 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –1 Ta=75˚C –0.1 25˚C –25˚C 50 –0.01 –1 –10 –100 –1000 0 –1 –10 –100 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 15 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z IO — VIN –10000 VO=–5V Ta=25˚C –100 VIN — IO VO= –0.2V Ta=25˚C Output current IO (µA) –100 Input voltage VIN (V) –0.6 –0.8 –1 –1.2 –1.4 –1000 –10 –1 –10 –0.1 –1 –0.4 –0.01 –0.1 –1 –10 –100 Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN211V IC — VCE –12 VCE(sat) — IC –10 hFE — IC IC/IB=10 12 VCE=–10V Ta=75˚C 10 25˚C 8 –25˚C Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –10 IB=–1.0mA –0.9mA –8 –0.8mA –0.7mA –6 –0.6mA –0.5mA –4 –0.4mA –0.3mA –2 –0.2mA 0 0 –2 –4 –6 –8 –0.1mA –10 –12 –1 Ta=75˚C 25˚C –0.1 –25˚C Forward current transfer ratio hFE Collector current IC (mA) 6 4 2 –0.01 –1 –10 –100 –1000 0 –1 –10 –100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) IO — VIN –10000 VO=–5V Ta=25˚C –100 VIN — IO VO= –0.2V Ta=25˚C Output current IO (µA) Input voltage VIN (V) –0.6 –0.8 –1 –1.2 –1.4 –1000 –10 –100 –1 –10 –0.1 –1 –0.4 –0.01 –0.1 –1 –10 –100 Input voltage VIN (V) Output current IO (mA) 16 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN211Z IC — VCE –200 Ta=25˚C –175 VCE(sat) — IC –10 hFE — IC IC/IB=10 300 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Collector current IC (mA) –150 IB=–1.0mA –125 –100 –75 –50 –25 0 0 –2 –4 –6 –8 –10 –12 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –1 200 25˚C 150 Ta=75˚C Ta=75˚C –0.1 25˚C –25˚C 100 –25˚C 50 –0.01 –1 –10 –100 –1000 0 –1 –10 –100 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 VO=–5V Ta=25˚C –100 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 3 –100 Input voltage VIN (V) –0.6 –0.8 –1 –1.2 –1.4 –1000 –10 –1 2 –10 –0.1 1 0 –1 –10 –100 –1 –0.4 –0.01 –0.1 –1 –10 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 17