UN2154

Transistors with built-in Resistor UN2154 Silicon PNP epitaxial planer transistor 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 For digital circuits 0.65±0.15 1.5 –0.05 +0.25 2.9 –0.05 0.95 q q q High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1.9±0.2 +0.2 s Features 0.95 1 3 1.45 0 to 0.1 2 1.1 –0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –30 –30 –100 200 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0.8 EIAJ:SC-59 Mini Type Package Marking Symbol: EV Internal Connection R1(10kΩ) C B R2 (47kΩ) E s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = –10V, IE = 1mA, f = 200MHz Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –30V, IE = 0 VCE = –30V, IB = 0 VEB = –3V, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = – 0.33mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ –30% 10 0.213 80 –4.9 – 0.2 +30% 80 – 0.5 –1.2 min –30 –30 – 0.1 – 0.5 – 0.1 typ max Unit V V µA µA mA — V V V kΩ — MHz 0.16 –0.06 +0.2 +0.1 0.4 –0.05 +0.1 1 Transistors with built-in Resistor PT — Ta 250 –200 Ta=25˚C –175 UN2154 IC — VCE –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA IC/IB=10 Total power dissipation PT (mW) Collector current IC (mA) 200 –150 –125 –100 –75 –50 –25 –10 150 –0.4mA –0.3mA –0.2mA –1 25˚C Ta=75˚C –0.1 –25˚C 100 50 –0.1mA 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 –0.01 –1 –10 –100 –1000 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE — IC 300 6 Ta=75˚C 250 25˚C 200 Cob — VCB Collector output capacitance Cob (pF) VCE=–10V f=1MHz IE=0 Ta=25˚C –10000 IO — VIN VO=–5V Ta=25˚C Forward current transfer ratio hFE 5 Output current IO (µA) –1000 –25˚C 4 150 3 –100 100 2 –10 50 1 0 –1 –10 –100 –1000 0 –1 –10 –100 –1 –0.4 –0.6 –0.8 –1 –1.2 –1.4 Collector current IC (mA) Collector to base voltage VCB (V) Input voltage VIN (V) VIN — IO –100 VO=–0.2V Ta=25˚C Input voltage VIN (V) –10 –1 –0.1 –0.01 –0.1 –1 –10 –100 Output current IO (mA) 2