Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
0.65±0.15 2.8 –0.3
+0.2
Unit: mm
0.65±0.15
1.5 –0.05
+0.25
s
q q
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
0.95 2.9 –0.05 1 1.9±0.2
+0.2
0.95
3 0.4 –0.05
+0.1
2
q q q q q q q q q q q q q q q q q q q q
UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2210 UN221D UN221E UN221F UN221K UN221L UN221M UN221N UN221T UN221V UN221Z
Marking Symbol (R1) 8A 10kΩ 8B 22kΩ 8C 47kΩ 8D 10kΩ 8E 10kΩ 8F 4.7kΩ 8H 22kΩ 8I 0.51kΩ 8K 1kΩ 8L 47kΩ 8M 47kΩ 8N 47kΩ 8O 4.7kΩ 8P 10kΩ 8Q 4.7kΩ EL 2.2kΩ EX 4.7kΩ EZ 22kΩ FD 2.2kΩ FF 4.7kΩ
(R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ
1.1 –0.1
1:Base 2:Emitter 3:Collector
EIAJ:SC-59 Mini Type Package
Internal Connection
R1
0 to 0.1
0.1 to 0.3 0.4±0.2
0.8
C
B
R2
E
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 200 150 –55 to +150 Unit V V mA mW ˚C ˚C
0.16 –0.06
+0.2
+0.1
s Resistance by Part Number
1.45
1
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
s Electrical Characteristics
Parameter Collector cutoff current UN2211 UN2212/2214/221E/221D/221M/221N/221T UN2213 Emitter cutoff current UN2215/2216/2217/2210 UN221F/221K UN2219 UN2218/221L/221V UN221Z Collector to base voltage Collector to emitter voltage UN2211 UN2212/221E Forward current transfer ratio UN2213/2214/221M UN2215*/2216*/2217*/2210* UN221F/221D/2219 UN2218/221K/221L UN221N/221T UN221V Collector to emitter saturation voltage UN221V Output voltage high level Output voltage low level UN2213/221K UN221D UN221E Transition frequency UN2211/2214/2215/221K UN2212/2217/221T Input resistance UN2213/221D/221E/2210 UN2216/221F/221L/221N/221Z UN2218 UN2219 UN221M/221V
(Ta=25˚C)
Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 0.4 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 80 hFE VCE = 10V, IC = 5mA 160 30 20 80 60 VCE(sat) VOH IC = 10mA, IB = 0.3mA IC = 10mA, IB = 1.5mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VCC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 150 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 0.04 400 200 0.25 0.25 V V — 460 V V mA Unit µA µA
* hFE rank classification (UN2215/2216/2217/2210)
Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
2
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
s Electrical Characteristics (continued)
Parameter UN2211/2212/2213/221L UN2214 UN2218/2219 UN221D Resistance ratio UN221E UN221F/221T UN221K UN221M UN211N UN211V UN211Z R1/R2 Symbol
(Ta=25˚C)
Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 2.13 0.047 0.1 1.0 0.21 max 1.2 0.25 0.12 Unit
3
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Common characteristics chart PT — Ta
250
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN2211 IC — VCE
160 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C
VCE(sat) — IC
100
hFE — IC
IC/IB=10 400 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1
120 100 80 60
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta=75˚C
200 25˚C 100 –25˚C
0.2mA 40 20 0 0 2 4 6 8 10 12
25˚C
Ta=75˚C
0.1mA
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN
(V)
Output current IO (mA)
4
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2212 IC — VCE
160
VCE(sat) — IC
100
hFE — IC
IC/IB=10 400 VCE=10V
Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1
120 100 80
0.7mA 0.6mA 0.5mA 0.4mA
Forward current transfer ratio hFE
Collector current IC (mA)
300
Ta=75˚C
200 25˚C –25˚C
0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA
25˚C
Ta=75˚C
100
0.1mA
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C
10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN2213 IC — VCE
160 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 400 Ta=25˚C
hFE — IC
VCE=10V
Collector current IC (mA)
120 100 80
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Ta=75˚C
Forward current transfer ratio hFE
140
IB=1.0mA
350 300 250 200 150 100 50 0 Ta=75˚C 25˚C –25˚C
60 40 20 0 0 2 4 6 8 10 12 0.2mA
0.1mA
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
5
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN2214 IC — VCE
160 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10
hFE — IC
400 VCE=10V
30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C
IB=1.0mA
Collector current IC (mA)
120 100 80 60 40 20 0 0 2 4 6 8
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
Forward current transfer ratio hFE
140
350 300 250 200 25˚C 150 –25˚C 100 50 0
Ta=75˚C
0.2mA
0.1mA 10 12
–25˚C
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6 10000 f=1MHz IE=0 Ta=25˚C 3000
IO — VIN
VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
6
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2215 IC — VCE
160
VCE(sat) — IC
100
hFE — IC
IC/IB=10
400 VCE=10V
30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C
Forward current transfer ratio hFE
140
IB=1.0mA 0.9mA 0.8mA
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
350 300 250 200 25˚C 150 100 50 0 –25˚C Ta=75˚C
Collector current IC (mA)
120 100 80
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA
Ta=75˚C
–25˚C
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN2216 IC — VCE
160
VCE(sat) — IC
100
hFE — IC
IC/IB=10 400 VCE=10V 350 Ta=75˚C 300 250 –25˚C 200 150 100 50 0 25˚C
Ta=25˚C 140 IB=1.0mA
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C
120 100
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
80 60 40 20 0 0 2 4 6 8
0.4mA 0.3mA 0.2mA
0.1mA
–25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
10
12
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Forward current transfer ratio hFE
Collector current IC (mA)
Collector current IC (mA)
7
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN2217 IC — VCE
120 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 400
hFE — IC
VCE=10V
100
30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1
Forward current transfer ratio hFE
Collector current IC (mA)
Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
350 300 250 200 Ta=75˚C 150 100 50 0 25˚C –25˚C
80 0.4mA 0.3mA 0.2mA
60
Ta=75˚C
40
20
0.1mA
–25˚C 0.3 1 3 10 30 100
0 0 2 4 6 8 10 12
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C
10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
8
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2218 IC — VCE
240 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10
hFE — IC
160 VCE=10V
200
30 10 3 1 Ta=75˚C 0.3 0.1 0.03 –25˚C 0.01 0.1 25˚C
Forward current transfer ratio hFE
Collector current IC (mA)
160
IB=1.0mA 0.9mA 0.8mA 0.7mA
120
Ta=75˚C 80 25˚C –25˚C 40
120 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0 0 2 4 6 8 0.1mA 10 12
80
40
0
0.3 1 3 10 30 100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C
10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN2219 IC — VCE
240
100
VCE(sat) — IC
IC/IB=10 160
hFE — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C 200
VCE=10V
160
IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA
10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 0.01 0.1
Forward current transfer ratio hFE
30
Collector current IC (mA)
120
120 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12
80
Ta=75˚C 25˚C –25˚C
80
40
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
9
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C
VIN — IO
100 30 VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN2210 IC — VCE
60
VCE(sat) — IC
100
hFE — IC
IC/IB=10 400 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
50
30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C
Forward current transfer ratio hFE
IB=1.0mA 0.9mA 0.8mA
Ta=25˚C
350 300 Ta=75˚C 250 25˚C 200 150 100 50 0 –25˚C
Collector current IC (mA)
40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA
30
0.3mA
20
10
0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C
VIN — IO
VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C
10000 3000
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN
(V)
Output current IO (mA)
10
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221D IC — VCE
30
VCE(sat) — IC
100
hFE — IC
IC/IB=10 160 VCE=10V Ta=75˚C 25˚C –25˚C 120
Collector to emitter saturation voltage VCE(sat) (V)
25
30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C
IB=1.0mA 20
15 0.2mA 10 0.1mA
Forward current transfer ratio hFE
100
Collector current IC (mA)
Ta=25˚C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA
80
Ta=75˚C
40
5
0 0 2 4 6 8 10 12
0 0.3 1 3 10 30 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C
VIN — IO
VO=5V Ta=25˚C
100 30 VO=0.2V Ta=25˚C
10000 3000
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 1.5
2.0
2.5
3.0
3.5
4.0
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN221E IC — VCE
60
VCE(sat) — IC
100
hFE — IC
IC/IB=10 160 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
50
30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C
Forward current transfer ratio hFE
IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA
Collector current IC (mA)
120
Ta=75˚C 25˚C –25˚C
40 0.3mA 0.4mA 0.5mA 0.2mA
30
80
0.1mA 20
40
10
–25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
0 0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
11
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 1.5
2.0
2.5
3.0
3.5
4.0
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN221F IC — VCE
240 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 160
hFE — IC
VCE=10V
200
30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Ta=75˚C
Forward current transfer ratio hFE
Collector current IC (mA)
160
0.9mA 0.8mA 0.7mA 0.6mA
120
Ta=75˚C 80 25˚C –25˚C
120
IB=1.0mA 0.5mA 0.4mA 0.3mA
80
40
40 0.2mA 0.1mA 0 0 2 4 6 8 10 12
–25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C
VIN — IO
VO=5V Ta=25˚C
100 30 VO=0.2V Ta=25˚C
10000 3000
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
12
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221K IC — VCE
240 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 240
hFE — IC
VCE=10V
200
Forward current transfer ratio hFE
200
Collector current IC (mA)
10
160 IB=1.2mA 1.0mA 0.8mA 80 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 12
160 Ta=75˚C 120 25˚C 80 –25˚C 40
120
1
25˚C 0.1
Ta=75˚C
40
–25˚C
0.01 1 3 10 30 100 300 1000
0 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
VIN — IO
f=1MHz IE=0 Ta=25˚C 100 30 VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
4
Input voltage VIN (V)
1 3 10 30 100
10 3 1 0.3 0.1 0.03
3
2
1
0
0.01 0.1
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Output current IO (mA)
Characteristics charts of UN221L IC — VCE
240
100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
IC/IB=10
hFE — IC
240 VCE=10V
200
Forward current transfer ratio hFE
200
Collector current IC (mA)
10
160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA
160
Ta=75˚C
1
120
25˚C
Ta=75˚C 25˚C 0.1 –25˚C
–25˚C 80
40 0.2mA 0 0 2 4 6 8 10 12
40
0.01 1 3 10 30 100 300 1000
0 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
13
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
6 100 f=1MHz IE=0 Ta=25˚C
IO — VIN
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
4
Input voltage VIN (V)
10
3
1
2
0.1
1
0 1 3 10 30 100
0.01 0.1
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Output current IO (mA)
Characteristics charts of UN221M IC — VCE
240
VCE(sat) — IC
10
hFE — IC
IC/IB=10 500 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C 200 IB=1.0mA 0.9mA 0.8mA 0.7mA
3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.003 0.001 25˚C
Forward current transfer ratio hFE
Collector current IC (mA)
400
160 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA
300 Ta=75˚C 25˚C 200 –25˚C
120
80
–25˚C
40
0.1mA
100
0 0 2 4 6 8 10 12
0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
5
IO — VIN
104
f=1MHz IE=0 Ta=25˚C
VIN — IO
VO=5V Ta=25˚C
100 30 VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
4
Output current IO (µA)
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10 3 1 0.3 0.1 0.03
3
102
2
101
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.01 0.1
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
14
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221N IC — VCE
160 Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA
VCE(sat) — IC
10
hFE — IC
IC/IB=10 480 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
Forward current transfer ratio hFE
400 Ta=75˚C
Collector current IC (mA)
120 100 80 60 40
1
320 25˚C 240
0.1 25˚C
Ta=75˚C
160
–25˚C
0.1mA 20 0 0 2 4 6 8 10 12
80
–25˚C 0.01 1 10 100 1000
0 1 10 100 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C 100
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
3
100
Input voltage VIN (V)
0.6 0.8 1 1.2 1.4
1000
10
1
2
10
0.1
1
0 1 10 100
1 0.4
0.01 0.1
1
10
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN221T IC — VCE
160 Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 80 60 40 0.1mA 20 0 0 2 4 6 8 10 12 0.3mA 0.2mA
VCE(sat) — IC
10
hFE — IC
IC/IB=10
480 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
Forward current transfer ratio hFE
400 Ta=75˚C 320 25˚C
Collector current IC (mA)
120 100
1
240
0.1 25˚C
Ta=75˚C
–25˚C 160
80
–25˚C 0.01 1 10 100 1000
0 1 10 100 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
15
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C 100
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
3
Input voltage VIN (V)
1000
10
100
1
2
10
0.1
1
0 1 10 100
1 0.4
0.6
0.8
1
1.2
1.4
0.01 0.1
1
10
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN221V IC — VCE
160 Ta=25˚C 140 10
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
hFE — IC
240 VCE=10V
Forward current transfer ratio hFE
200
Collector current IC (mA)
120 100 80 60 40
IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
1
160 Ta=75˚C 120 25˚C 80 –25˚C
Ta=75˚C 0.1 25˚C
0.4mA 20 0 0 2 4 6 8 0.3mA 0.2mA 10 12
–25˚C
40
0.01 1 10 100 1000
0 1 10 100 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C
VIN — IO
100 VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000
10
3
100
1
2
10
0.1
1
0 1 10 100
1 0.4
0.6
0.8
1
1.2
1.4
0.01 0.1
1
10
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
16
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221Z IC — VCE
160 Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 80 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA 0.3mA
VCE(sat) — IC
10
hFE — IC
IC/IB=10 480 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
Forward current transfer ratio hFE
400
Collector current IC (mA)
120 100
1
320
Ta=75˚C
240
25˚C –25˚C
Ta=75˚C 0.1 25˚C
160
–25˚C
80
0.01 1 10 100 1000
0 1 10 100 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C
100
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
3
100
Input voltage VIN (V)
0.6 0.8 1 1.2 1.4
1000
10
1
2
10
0.1
1
0 –1
–10
–100
1 0.4
0.01 0.1
1
10
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
17
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