UN411F

Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm s Features q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 1 2 3 q q q q q q q q q q q q q q q UN4111 UN4112 UN4113 UN4114 UN4115 UN4116 UN4117 UN4118 UN4119 UN4110 UN411D UN411E UN411F UN411H UN411L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.0±0.2 s Resistance by Part Number 0.7±0.1 marking +0.2 0.45–0.1 15.6±0.5 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L s Electrical Characteristics Parameter Collector cutoff current UN4111 UN4112/4114/411E/411D Emitter cutoff current UN4113 UN4115/4116/4117/4110 UN411F/411H UN4119 UN4118/411L Collector to base voltage Collector to emitter voltage UN4111 UN4112/411E Forward current transfer ratio UN4113/4114 UN4115*/4116*/4117*/4110* UN411F/411D/4119/411H UN4118/411L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN4113 UN411D UN411E Transition frequency UN4111/4114/4115 UN4112/4117 UN4113/4110/411D/411E Input resistance UN4116/411F/411L UN4118 UN4119 UN411H UN4111/4112/4113/411L UN4114 UN4118/4119 Resistance ratio UN411D UN411E UN411F UN411H (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 VCBO VCEO IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 35 60 hFE VCE = –10V, IC = –5mA 80 160 30 20 VCE(sat) VOH IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCC = –5V, VB = –10V, RL = 1kΩ VCC = 5V, VB = –6V, RL = 1kΩ fT VCB = –10V, IE = 1mA, f = 200MHz 80 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 0.8 0.17 0.08 R1/R2 3.7 1.7 0.37 0.17 1.0 0.21 0.1 4.7 2.14 0.47 0.22 1.2 0.25 0.12 5.7 2.6 0.57 0.27 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 MHz V – 0.25 V V 460 V V mA Unit µA µA * hFE rank classification (UN4115/4116/4117/4110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Common characteristics chart PT — Ta 400 Total power dissipation PT (mW) 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN4111 IC — VCE –160 –140 IB=–1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE= –10V hFE — IC Ta=75˚C –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Collector current IC (mA) –0.9mA –120 –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Forward current transfer ratio hFE 25˚C 120 –25˚C 80 25˚C 40 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN4112 IC — VCE –160 –140 Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 –0.4mA –0.3mA –0.2mA –0.1mA –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE — IC 400 VCE= –10V –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Forward current transfer ratio hFE Collector current IC (mA) –120 –100 300 Ta=75˚C 200 25˚C –25˚C 100 25˚C Ta=75˚C –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4113 IC — VCE –160 IB=–1.0mA –140 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Forward current transfer ratio hFE 300 Ta=75˚C 25˚C 200 –25˚C –0.4mA –0.3mA –0.2mA 25˚C 100 –0.1mA –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 4 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4114 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V IB=–1.0mA –30 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 25˚C Ta=75˚C Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA Forward current transfer ratio hFE –140 300 Ta=75˚C 200 25˚C –25˚C 100 –8 –10 –12 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –1000 –300 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –100 –30 –10 –3 –1 –0.3 –0.1 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 5 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN4115 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V Collector current IC (mA) –120 –100 –80 –60 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 25˚C Ta=75˚C Forward current transfer ratio hFE –140 IB=–1.0mA –30 300 Ta=75˚C 200 25˚C –25˚C 100 –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 3 2 1 –0.03 –0.01 –0.1 –0.3 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4116 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C hFE — IC VCE= –10V Collector current IC (mA) –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –8 Forward current transfer ratio hFE –140 IB=–1.0mA 300 Ta=75˚C –0.4mA –0.3mA –0.2mA 200 25˚C –25˚C 100 –0.1mA –25˚C –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 6 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO=–0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4117 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V –100 Collector current IC (mA) –80 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C Forward current transfer ratio hFE –30 300 –60 –0.3mA –0.2mA –20 –0.1mA 200 Ta=75˚C –40 25˚C 100 –25˚C 0 0 –2 –4 –6 –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 IO — VIN f=1MHz IE=0 Ta=25˚C VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) –3000 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 7 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN4118 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Forward current transfer ratio hFE Collector current IC (mA) 120 Ta=75˚C 80 25˚C –25˚C 40 –80 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4119 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C hFE — IC VCE= –10V –200 Forward current transfer ratio hFE Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA 120 Ta=75˚C 80 25˚C –25˚C –120 Ta=75˚C –80 –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –40 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 8 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4110 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE= –10V –30 –10 –3 –1 Ta=75˚C –0.3 –0.1 –0.03 –25˚C 25˚C Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA –60 –0.2mA –40 –0.1mA –20 300 Ta=75˚C 200 25˚C –25˚C 100 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 9 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN411D IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 160 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) –50 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C Ta=75˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Ta=25˚C Collector current IC (mA) 120 Ta=75˚C –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –0.1mA –10 25˚C 80 –25˚C –20 40 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –300 –100 –30 –10 –3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN411E IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) –50 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Ta=25˚C –30 Collector current IC (mA) 300 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –0.2mA Ta=75˚C 25˚C 200 Ta=75˚C 100 25˚C –25˚C –20 –0.1mA –10 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 10 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN411F IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Forward current transfer ratio hFE 120 Ta=75˚C 25˚C 80 –25˚C –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –25˚C 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 11 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Characteristics charts of UN411H IC — VCE –120 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 Forward current transfer ratio hFE 200 Collector current IC (mA) –10 –80 IB=–0.5mA –0.4mA 160 Ta=75˚C 120 25˚C 80 –25˚C 40 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –3 –10 –30 –100 –300 –1000 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN411L IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –200 Forward current transfer ratio hFE –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –1 Ta=75˚C 25˚C –25˚C 200 Collector current IC (mA) –160 IB=–1.0mA –0.8mA –80 –0.6mA –0.4mA –0.2mA 0 0 –2 –4 –6 –8 –10 –12 160 –120 120 Ta=75˚C 25˚C –25˚C 80 –40 40 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 12 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) 13