UN4123

UN4123

  • 厂商:

    PANASONIC

  • 封装:

  • 描述:

    UN4123 - Silicon PNP epitaxial planer transistor - Panasonic Semiconductor

  • 数据手册
  • 价格&库存
UN4123 数据手册
Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits q q s Resistance by Part Number q q q q q q UN4121 UN4122 UN4123 UN4124 UN412X UN412Y (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ 0.7±0.1 1 2 3 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –500 300 150 –55 to +150 Unit V V mA mW ˚C ˚C R1 Internal Connection 2.0±0.2 marking +0.2 0.45–0.1 15.6±0.5 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 3.0±0.2 s Features 4.0±0.2 Unit: mm C B R2 E 1 Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y s Electrical Characteristics Parameter Collector cutoff current UN412X Collector cutoff current UN412X Emitter cutoff current UN4121 UN4122/412X/412Y UN4123/4124 (Ta=25˚C) Symbol ICBO ICBO ICEO ICEO IEBO VCBO VCEO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 40 hFE VCE = –10V, IC = –100mA 50 60 20 VCE(sat) VCE(sat) VCE(sat) VOH VOL fT IC = –100mA, IB = –5mA IC = –10mA, IB = – 0.3mA IC = –50mA, IB = –5mA VCC = –5V, VB = – 0.5V, RL = 500Ω VCC = –5V, VB = –3.5V, RL = 500Ω VCB = –10V, IE = 50mA, f = 200MHz 80 2.2 4.7 R1 (–30%) 10 0.27 3.1 0.8 R1/R2 0.17 0.043 1.0 0.22 0.054 0.67 1.2 0.27 0.065 (+30%) kΩ –4.9 – 0.2 – 0.25 – 0.25 – 0.15 V V MHz V min typ max –1 – 0.1 –1 – 0.5 –5 –2 –1 V V mA Unit µA µA Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN4121 UN4122/412Y UN4123/4124 UN412X Collector to emitter saturation voltage UN412X UN412Y Output voltage high level Output voltage low level Transition frequency UN4121/4124 Input resistance UN4122 UN4123 UN412X UN412Y Resistance ratio UN4124 UN412X UN412Y Common characteristics chart PT — Ta 400 Total power dissipation PT (mW) 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 Transistors with built-in Resistor Characteristics charts of UN4121 IC — VCE –240 –100 UN4121/4122/4123/4124/412X/412Y VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V –200 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –0.01 –1 Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –120 200 –80 100 25˚C –40 –0.2mA –0.1mA –25˚C –25˚C –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 12 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 10 Output current IO (µA) 8 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 6 4 2 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4122 IC — VCE –300 VCE(sat) — IC –100 hFE — IC IC/IB=10 160 VCE= –10V Ta=75˚C Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –250 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –0.01 –1 –25˚C Forward current transfer ratio hFE Collector current IC (mA) IB=–1.0mA –200 –0.9mA –0.8mA –150 –0.7mA –0.6mA –0.5mA –100 –0.4mA –0.3mA –50 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 120 25˚C Ta=75˚C 80 –25˚C 40 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 3 Transistors with built-in Resistor Cob — VCB 24 UN4121/4122/4123/4124/412X/412Y IO — VIN VIN — IO VO=–5V Ta=25˚C –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 20 f=1MHz IE=0 Ta=25˚C –10000 –3000 Output current IO (µA) 16 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 12 8 4 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4123 IC — VCE –240 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –1 –3 –10 –30 –100 –300 –1000 0 –1 –3 IC/IB=10 200 VCE= –10V hFE — IC Ta=75˚C 25˚C 150 –200 –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA Forward current transfer ratio hFE Collector current IC (mA) –120 100 –25˚C –80 –0.4mA –0.3mA 50 –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 24 –10000 IO — VIN f=1MHz IE=0 Ta=25˚C VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) –3000 20 Output current IO (µA) 16 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 12 8 4 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 Transistors with built-in Resistor Characteristics charts of UN4124 IC — VCE –300 UN4121/4122/4123/4124/412X/412Y VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –250 –30 –10 –3 –1 Ta=75˚C –0.3 –0.1 –0.03 –0.01 –1 –25˚C 25˚C Forward current transfer ratio hFE 350 300 250 Ta=75˚C 200 150 100 50 0 –1 25˚C –25˚C Collector current IC (mA) IB=–1.0mA –200 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –100 –0.4mA –0.3mA –50 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –150 –3 –10 –30 –100 –300 –1000 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 24 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 20 Output current IO (µA) 16 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 12 8 4 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN412X IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –200 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –0.01 –1 Forward current transfer ratio hFE 200 Collector current IC (mA) IB=–1.6mA –160 –1.4mA –1.2mA –120 –1.0mA –0.8mA –80 –0.6mA –40 –0.4mA –0.2mA 0 0 –2 –4 –6 –8 –10 –12 160 Ta=75˚C 25˚C 80 –25˚C 40 120 Ta=75˚C –25˚C –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 Transistors with built-in Resistor Cob — VCB 24 UN4121/4122/4123/4124/412X/412Y VIN — IO Collector output capacitance Cob (pF) 20 f=1MHz IE=0 Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C 16 Input voltage VIN (V) –10 –3 –1 –0.3 –0.1 –0.03 12 8 4 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN412Y IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –200 Forward current transfer ratio hFE –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –1 Ta=75˚C 25˚C –25˚C 200 Collector current IC (mA) IB=–1.2mA –160 –1.0mA –0.8mA –0.6mA –80 –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 –12 160 Ta=75˚C 25˚C –25˚C –120 120 80 40 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 24 –100 VIN — IO f=1MHz IE=0 Ta=25˚C VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) –30 20 16 Input voltage VIN (V) –10 –3 –1 –0.3 –0.1 –0.03 12 8 4 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) 6
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