UN4217

Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/4218/ 4219/4210/421D/421E/421F/421K/421L Silicon NPN epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm s Features q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 1 2 3 q q q q q q q q q q q q q q q UN4211 UN4212 UN4213 UN4214 UN4215 UN4216 UN4217 UN4218 UN4219 UN4210 UN421D UN421E UN421F UN421K UN421L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 10kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.0±0.2 s Resistance by Part Number 0.7±0.1 marking +0.2 0.45–0.1 15.6±0.5 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L s Electrical Characteristics Parameter Collector cutoff current UN4211 UN4212/4214/421E/421D UN4213 Emitter cutoff current UN4215/4216/4217/4210 UN421F/421K UN4219 UN4218/421L Collector to base voltage Collector to emitter voltage UN4211 Forward current transfer ratio UN4212/421E UN4213/4214 UN4215*/4216*/4217*/4210* UN421F/421D/4219 UN4218/421K/421L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN4213/421K UN421D UN421E Transition frequency UN4211/4214/4215/421K UN4212/4217 Input resistance UN4213/421D/421E/4210 UN4216/421F/421L UN4218 UN4219 UN4211/4212/4213/421L UN4214 Resistance ratio UN4218/4219 UN421D UN421E UN421F UN421K (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 hFE VCE = 10V, IC = 5mA 80 160 30 20 VCE(sat) VOH IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VCC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 150 10 22 R1 (–30%) 47 4.7 0.51 1 0.8 0.17 0.08 R1/R2 3.7 1.7 0.37 1.7 1.0 0.21 0.1 4.7 2.14 0.47 2.13 1.2 0.25 0.12 5.7 2.6 0.57 2.6 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 0.25 V V 460 V V mA Unit µA µA * hFE rank classification (UN4215/4216/4217/4210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 Transistors with built-in Resistor Common characteristics chart PT — Ta 400 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L Total power dissipation PT (mW) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN4211 IC — VCE 160 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C 200 25˚C 100 –25˚C 0.2mA 40 20 0 0 2 4 6 8 10 12 25˚C Ta=75˚C 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Transistors with built-in Resistor Characteristics charts of UN4212 IC — VCE 160 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C 200 25˚C –25˚C 0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA 25˚C Ta=75˚C 100 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4213 IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25˚C hFE — IC VCE=10V Collector current IC (mA) 120 100 80 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Ta=75˚C Forward current transfer ratio hFE 140 IB=1.0mA 350 300 250 200 150 100 50 0 Ta=75˚C 25˚C –25˚C 60 40 20 0 0 2 4 6 8 10 12 0.2mA 0.1mA 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 4 Transistors with built-in Resistor Cob — VCB 6 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO — VIN VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C 10000 3000 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4214 IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 400 VCE=10V 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C IB=1.0mA Collector current IC (mA) 120 100 80 60 40 20 0 0 2 4 6 8 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 350 300 250 200 25˚C 150 –25˚C 100 50 0 Ta=75˚C 0.2mA 0.1mA 10 12 –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 10000 f=1MHz IE=0 Ta=25˚C 3000 IO — VIN VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 5 Transistors with built-in Resistor Characteristics charts of UN4215 IC — VCE 160 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 350 300 250 200 25˚C 150 100 50 0 –25˚C Ta=75˚C Collector current IC (mA) 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA Ta=75˚C –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4216 IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V 350 Ta=75˚C 300 250 –25˚C 200 150 100 50 0 25˚C Ta=25˚C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C 120 100 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 80 60 40 20 0 0 2 4 6 8 0.4mA 0.3mA 0.2mA 0.1mA –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Forward current transfer ratio hFE Collector current IC (mA) Collector current IC (mA) 6 Transistors with built-in Resistor Cob — VCB 6 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO — VIN VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C 10000 3000 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4217 IC — VCE 120 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE=10V 100 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 350 300 250 200 Ta=75˚C 150 100 50 0 25˚C –25˚C 80 0.4mA 0.3mA 0.2mA 60 Ta=75˚C 40 20 0.1mA –25˚C 0.3 1 3 10 30 100 0 0 2 4 6 8 10 12 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 7 Transistors with built-in Resistor Characteristics charts of UN4218 IC — VCE 240 100 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 160 VCE=10V 200 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 –25˚C 0.01 0.1 25˚C Forward current transfer ratio hFE Collector current IC (mA) 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 120 Ta=75˚C 80 25˚C –25˚C 40 120 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0 0 2 4 6 8 0.1mA 10 12 80 40 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4219 IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE=10V 200 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 0.01 0.1 Forward current transfer ratio hFE 30 Collector current IC (mA) 120 120 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 80 Ta=75˚C 25˚C –25˚C 80 40 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 8 Transistors with built-in Resistor Cob — VCB 6 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO — VIN VIN — IO VO=5V Ta=25˚C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C 10000 3000 100 30 VO=0.2V Ta=25˚C Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN4210 IC — VCE 60 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 Ta=75˚C 250 25˚C 200 150 100 50 0 –25˚C Collector current IC (mA) 40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA 30 0.3mA 20 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 9 Transistors with built-in Resistor Characteristics charts of UN421D IC — VCE 30 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) — IC 100 hFE — IC IC/IB=10 160 VCE=10V Ta=75˚C 25˚C –25˚C 120 Collector to emitter saturation voltage VCE(sat) (V) 25 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C IB=1.0mA 20 15 0.2mA 10 0.1mA Forward current transfer ratio hFE 100 Collector current IC (mA) Ta=25˚C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA 80 Ta=75˚C 40 5 0 0 2 4 6 8 10 12 0 0.3 1 3 10 30 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN421E IC — VCE 60 VCE(sat) — IC 100 hFE — IC IC/IB=10 160 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA Collector current IC (mA) 120 Ta=75˚C 25˚C –25˚C 40 0.3mA 0.4mA 0.5mA 0.2mA 30 80 0.1mA 20 40 10 –25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 0 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 10 Transistors with built-in Resistor Cob — VCB 6 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO — VIN VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C 10000 3000 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN421F IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE=10V 200 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Ta=75˚C Forward current transfer ratio hFE Collector current IC (mA) 160 0.9mA 0.8mA 0.7mA 0.6mA 120 Ta=75˚C 80 25˚C –25˚C 120 IB=1.0mA 0.5mA 0.4mA 0.3mA 80 40 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 –25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 11 Transistors with built-in Resistor Characteristics charts of UN421K IC — VCE 240 100 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 240 hFE — IC VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.2mA 1.0mA 0.8mA 80 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 12 160 Ta=75˚C 120 25˚C 80 –25˚C 40 120 1 25˚C 0.1 Ta=75˚C 40 –25˚C 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 1 3 10 30 100 10 3 1 0.3 0.1 0.03 3 2 1 0 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN421L IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 240 VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75˚C 1 120 25˚C Ta=75˚C 25˚C 0.1 –25˚C –25˚C 80 40 0.2mA 0 0 2 4 6 8 10 12 40 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 12 Transistors with built-in Resistor Cob — VCB 6 100 f=1MHz IE=0 Ta=25˚C UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO — VIN VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 10 3 1 2 0.1 1 0 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) 13