UN511F

Transistors with built-in Resistor UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Silicon PNP epitaxial planer transistor For digital circuits 2.1±0.1 Unit: mm 1.25±0.1 s Features 0.65 0.425 0.425 1 2.0±0.2 1.3±0.1 0.65 q 3 2 0.9±0.1 0 to 0.1 q q q q q q q q q q q q q q q q q q q q UN5111 UN5112 UN5113 UN5114 UN5115 UN5116 UN5117 UN5118 UN5119 UN5110 UN511D UN511E UN511F UN511H UN511L UN511M UN511N UN511T UN511V UN511Z Marking Symbol 6A 6B 6C 6D 6E 6F 6H 6I 6K 6L 6M 6N 6O 6P 6Q EI EW EY FC FE (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51Ω 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ 2.2kΩ 4.7kΩ 22kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 0.7±0.1 0.2±0.1 1 : Base 2 : Emitter 3 : Collector EIAJ : SC–70 S–Mini Type Package Internal Connection R1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.15 -0.05 +0.1 s Resistance by Part Number 0.2 0.3 -0 q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. +0.1 1 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z s Electrical Characteristics Parameter Collector cutoff current UN5111 UN5112/5114/511E/511D/511M/511N/511T UN5113 Emitter cutoff current UN5115/5116/5117/5110 UN511F/511H UN5119 UN5118/511L/511V UN511Z Collector to base voltage UN511N/511T/511V/511Z Collector to emitter voltage UN511N/511T UN5111 UN5112/511E UN5113/5114/511M Forward current transfer ratio UN5115*/5116*/5117*/5110* UN511F/511D/5119/511H UN5118/511L UN511N/511T UN511V UN511Z Collector to emitter saturation voltage UN511V Output voltage high level Output voltage low level UN5113 UN511D UN511E Transition frequency UN511Z UN5111/5114/5115 UN5112/5117/511T UN5113/5110/511D/511E Input resistance UN5116/511F/511L/511N/511Z UN5118 UN5119 UN511H/511M/511V (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 – 0.4 VCBO VCEO IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 –50 –50 35 60 80 160 hFE VCE = –10V, IC = –5mA 30 20 80 6 60 VCE(sat) VOH IC = –10mA, IB = – 0.3mA IC = –10mA, IB = –1.5mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCC = –5V, VB = –10V, RL = 1kΩ VCC = –5V, VB = –6V, RL = 1kΩ fT VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 1mA, f = 200MHz 80 150 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 MHz V 400 20 200 – 0.25 – 0.25 V V 460 V mA Unit µA µA V * hFE rank classification (UN5115/5116/5117/5110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z s Electrical Characteristics (continued) Parameter UN5111/5112/5113/511L UN5114 UN5118/5119 UN511D Resistance ratio UN511E UN511F/511T UN511H UN511M UN511N UN511V UN511Z R1/R2 Symbol (Ta=25˚C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 0.17 0.22 0.047 0.1 1.0 0.21 0.27 max 1.2 0.25 0.12 Unit 3 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Common characteristics chart PT — Ta 240 Total power dissipation PT (mW) 200 160 120 80 40 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of UN5111 IC — VCE –160 –140 IB=–1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE= –10V hFE — IC Ta=75˚C –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Collector current IC (mA) –0.9mA –120 –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Forward current transfer ratio hFE 25˚C 120 –25˚C 80 25˚C 40 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN5112 IC — VCE –160 –140 Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 –0.4mA –0.3mA –0.2mA –0.1mA –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE — IC 400 VCE= –10V –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Forward current transfer ratio hFE Collector current IC (mA) –120 –100 300 Ta=75˚C 200 25˚C –25˚C 100 25˚C Ta=75˚C –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5113 IC — VCE –160 IB=–1.0mA –140 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Forward current transfer ratio hFE 300 Ta=75˚C 25˚C 200 –25˚C –0.4mA –0.3mA –0.2mA 25˚C 100 –0.1mA –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5114 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V IB=–1.0mA –30 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 25˚C Ta=75˚C Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA Forward current transfer ratio hFE –140 300 Ta=75˚C 200 25˚C –25˚C 100 –8 –10 –12 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –1000 –300 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –100 –30 –10 –3 –1 –0.3 –0.1 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN5115 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V Collector current IC (mA) –120 –100 –80 –60 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 25˚C Ta=75˚C Forward current transfer ratio hFE –140 IB=–1.0mA –30 300 Ta=75˚C 200 25˚C –25˚C 100 –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 3 2 1 –0.03 –0.01 –0.1 –0.3 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5116 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C hFE — IC VCE= –10V Collector current IC (mA) –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –8 Forward current transfer ratio hFE –140 IB=–1.0mA 300 Ta=75˚C –0.4mA –0.3mA –0.2mA 200 25˚C –25˚C 100 –0.1mA –25˚C –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 7 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO=–0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5117 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V –100 Collector current IC (mA) –80 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C Forward current transfer ratio hFE –30 300 –60 –0.3mA –0.2mA –20 –0.1mA 200 Ta=75˚C –40 25˚C 100 –25˚C 0 0 –2 –4 –6 –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 IO — VIN f=1MHz IE=0 Ta=25˚C VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) –3000 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN5118 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Forward current transfer ratio hFE Collector current IC (mA) 120 Ta=75˚C 80 25˚C –25˚C 40 –80 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5119 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C hFE — IC VCE= –10V –200 Forward current transfer ratio hFE Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA 120 Ta=75˚C 80 25˚C –25˚C –120 Ta=75˚C –80 –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –40 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 9 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5110 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE= –10V –30 –10 –3 –1 Ta=75˚C –0.3 –0.1 –0.03 –25˚C 25˚C Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA –60 –0.2mA –40 –0.1mA –20 300 Ta=75˚C 200 25˚C –25˚C 100 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN511D IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 160 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) –50 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C Ta=75˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Ta=25˚C Collector current IC (mA) 120 Ta=75˚C –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –0.1mA –10 25˚C 80 –25˚C –20 40 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –300 –100 –30 –10 –3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN511E IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) –50 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Ta=25˚C –30 Collector current IC (mA) 300 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –0.2mA Ta=75˚C 25˚C 200 Ta=75˚C 100 25˚C –25˚C –20 –0.1mA –10 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 11 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN511F IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Forward current transfer ratio hFE 120 Ta=75˚C 25˚C 80 –25˚C –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –25˚C 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN511H IC — VCE –120 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 Forward current transfer ratio hFE 200 Collector current IC (mA) –10 –80 IB=–0.5mA –0.4mA 160 Ta=75˚C 120 25˚C 80 –25˚C 40 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –3 –10 –30 –100 –300 –1000 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN511L IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –200 Forward current transfer ratio hFE –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –1 Ta=75˚C 25˚C –25˚C 200 Collector current IC (mA) –160 IB=–1.0mA –0.8mA –80 –0.6mA –0.4mA –0.2mA 0 0 –2 –4 –6 –8 –10 –12 160 –120 120 Ta=75˚C 25˚C –25˚C 80 –40 40 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 13 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN511M IC — VCE 240 VCE(sat) — IC –10 hFE — IC IC/IB=10 500 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 200 –3 –1 –0.3 –0.1 –0.03 –0.01 25˚C Ta=75˚C Forward current transfer ratio hFE Collector current IC (mA) 160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA 400 300 120 200 Ta=75˚C 25˚C –25˚C 80 –0.5mA –0.4mA –0.3mA –25˚C 40 100 –0.2mA –0.1mA –0.003 –0.001 –1 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 10 IO — VIN 10–4 f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 8 Output current IO (µA) Input voltage VIN (V) 10–3 –10 –3 –1 –0.3 –0.1 –0.03 6 10–2 4 10–1 2 0 –0.1 –0.3 –1 –3 –10 –30 –100 1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 14 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN511N IC — VCE –200 Ta=25˚C –175 VCE(sat) — IC –10 hFE — IC IC/IB=10 300 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C 150 Collector current IC (mA) –150 –125 –100 –75 –50 –25 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –1 Ta=75˚C –0.1 25˚C –25˚C –25˚C 100 50 0 0 –2 –4 –6 –8 –10 –12 –0.01 –1 –10 –100 –1000 0 –1 –10 –100 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 VO=–5V Ta=25˚C –100 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 3 –100 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –1 2 –10 –0.1 1 0 –1 –10 –100 –1 –0.4 –0.01 –0.1 –1 –10 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN511T IC — VCE –200 Ta=25˚C –175 –10 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 300 hFE — IC VCE=–10V Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C 150 –25˚C 100 Collector current IC (mA) –150 IB=–1.0mA –125 –100 –75 –50 –25 0 0 –2 –4 –6 –8 –10 –12 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –1 Ta=75˚C –0.1 25˚C –25˚C 50 –0.01 –1 –10 –100 –1000 0 –1 –10 –100 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 15 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z IO — VIN –10000 VO=–5V Ta=25˚C –100 VIN — IO VO= –0.2V Ta=25˚C Output current IO (µA) –100 Input voltage VIN (V) –0.6 –0.8 –1 –1.2 –1.4 –1000 –10 –1 –10 –0.1 –1 –0.4 –0.01 –0.1 –1 –10 –100 Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN511V IC — VCE –12 VCE(sat) — IC –10 hFE — IC IC/IB=10 12 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –10 IB=–1.0mA –0.9mA –8 –0.8mA –0.7mA –6 –0.6mA –0.5mA –4 –0.4mA –0.3mA –2 –0.2mA 0 0 –2 –4 –6 –8 –0.1mA –10 –12 Forward current transfer ratio hFE Ta=75˚C 10 25˚C 8 –25˚C Collector current IC (mA) –1 Ta=75˚C 25˚C –0.1 –25˚C 6 4 2 –0.01 –1 –10 –100 –1000 0 –1 –10 –100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) IO — VIN –10000 VO=–5V Ta=25˚C –100 VIN — IO VO= –0.2V Ta=25˚C Output current IO (µA) Input voltage VIN (V) –0.6 –0.8 –1 –1.2 –1.4 –1000 –10 –100 –1 –10 –0.1 –1 –0.4 –0.01 –0.1 –1 –10 –100 Input voltage VIN (V) Output current IO (mA) 16 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN511Z IC — VCE –200 Ta=25˚C –175 VCE(sat) — IC –10 hFE — IC IC/IB=10 300 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 250 Collector current IC (mA) –150 IB=–1.0mA –125 –100 –75 –50 –25 0 0 –2 –4 –6 –8 –10 –12 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –1 200 25˚C 150 Ta=75˚C Ta=75˚C –0.1 25˚C –25˚C 100 –25˚C 50 –0.01 –1 –10 –100 –1000 0 –1 –10 –100 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 VO=–5V Ta=25˚C –100 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 3 Input voltage VIN (V) –0.6 –0.8 –1 –1.2 –1.4 –1000 –10 –100 –1 2 –10 –0.1 1 0 –1 –10 –100 –1 –0.4 –0.01 –0.1 –1 –10 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 17