UN5219

Transistors with built-in Resistor UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Silicon NPN epitaxial planer transistor For digital circuits 2.1±0.1 Unit: mm 1.25±0.1 s Features 0.65 0.425 0.425 1 2.0±0.2 1.3±0.1 0.65 q 3 2 0.9±0.1 0 to 0.1 q q q q q q q q q q q q q q q q q q q q UN5211 UN5212 UN5213 UN5214 UN5215 UN5216 UN5217 UN5218 UN5219 UN5210 UN521D UN521E UN521F UN521K UN521L UN521M UN521N UN521T UN521V UN521Z Marking Symbol (R1) 8A 10kΩ 8B 22kΩ 8C 47kΩ 8D 10kΩ 8E 10kΩ 8F 4.7kΩ 8H 22kΩ 8I 0.51kΩ 8K 1kΩ 8L 47kΩ 8M 47kΩ 8N 47kΩ 8O 4.7kΩ 8P 10kΩ 8Q 4.7kΩ EL 2.2kΩ EX 4.7kΩ EZ 22kΩ FD 2.2kΩ FF 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 0.7±0.1 0.2±0.1 1 : Base 2 : Emitter 3 : Collector EIAJ : SC–70 S–Mini Type Package Internal Connection R1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.15 -0.05 +0.1 s Resistance by Part Number 0.2 0.3 -0 q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. +0.1 1 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z s Electrical Characteristics Parameter Collector cutoff current UN5211 UN5212/5214/521E/521D/521M/521N/521T UN5213 Emitter cutoff current UN5215/5216/5217/5210 UN521F/521K UN5219 UN5218/521L/521V UN521Z Collector to base voltage Collector to emitter voltage UN5211 UN5212/521E UN5213/5214/521M Forward current transfer ratio UN5215*/5216*/5217*/5210* UN521F/521D/5219 UN5218/521K/521L UN521N/521T UN521V UN521Z Collector to emitter saturation voltage UN521V Output voltage high level Output voltage low level UN5213/521K UN521D UN521E Transition frequency UN5211/5214/5215/521K UN5212/5217/521T Input resistance UN5213/521D/521E/5210 UN5216/521F/521L/521N/521Z UN5218 UN5219 UN521M/521V (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 0.4 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 80 160 hFE VCE = 10V, IC = 5mA 30 20 80 6 60 VCE(sat) VOH IC = 10mA, IB = 0.3mA IC = 10mA, IB = 1.5mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VOC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 150 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 400 20 200 0.25 0.25 V V V 460 V V mA Unit µA µA * hFE rank classification (UN5125/5216/5217/5210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z s Electrical Characteristics (continued) Parameter UN5211/5212/5213/521L UN5214 UN5218/5219 UN521D Resistance ratio UN521E UN521F/521T UN521K UN521M UN521N UN521V UN521Z R1/R2 Symbol (Ta=25˚C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 2.13 0.047 0.1 1.0 0.21 max 1.2 0.25 0.12 Unit 3 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Common characteristics chart PT — Ta 240 Total power dissipation PT (mW) 200 160 120 80 40 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of UN5211 IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE=10V 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Collector current IC (mA) 300 Ta=75˚C 200 25˚C 100 –25˚C 0.2mA 40 20 0 0 2 4 6 8 10 12 25˚C Ta=75˚C 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN5212 IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C 200 25˚C –25˚C 0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA 25˚C Ta=75˚C 100 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5213 IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25˚C hFE — IC VCE=10V Collector current IC (mA) 120 100 80 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Ta=75˚C Forward current transfer ratio hFE 140 IB=1.0mA 350 300 250 200 150 100 50 0 Ta=75˚C 25˚C –25˚C 60 40 20 0 0 2 4 6 8 10 12 0.2mA 0.1mA 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5214 IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE=10V 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C IB=1.0mA Collector current IC (mA) 120 100 80 60 40 20 0 0 2 4 6 8 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 350 300 250 200 25˚C 150 –25˚C 100 50 0 Ta=75˚C 0.2mA 0.1mA 10 12 –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 10000 f=1MHz IE=0 Ta=25˚C 3000 IO — VIN VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN5215 IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 350 300 250 200 25˚C 150 100 50 0 –25˚C Ta=75˚C Collector current IC (mA) 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA Ta=75˚C –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5216 IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V 350 Ta=75˚C 300 250 –25˚C 200 150 100 50 0 25˚C Ta=25˚C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C 120 100 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 80 60 40 20 0 0 2 4 6 8 0.4mA 0.3mA 0.2mA 0.1mA –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Forward current transfer ratio hFE Collector current IC (mA) Collector current IC (mA) 7 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C VIN — IO 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5217 IC — VCE 120 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE=10V 100 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 350 300 250 200 Ta=75˚C 150 100 50 0 25˚C –25˚C 80 0.4mA 0.3mA 0.2mA 60 Ta=75˚C 40 20 0.1mA –25˚C 0.3 1 3 10 30 100 0 0 2 4 6 8 10 12 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN5218 IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE=10V 200 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 –25˚C 0.01 0.1 25˚C Forward current transfer ratio hFE Collector current IC (mA) 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 120 Ta=75˚C 80 25˚C –25˚C 40 120 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0 0 2 4 6 8 0.1mA 10 12 80 40 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5219 IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 160 VCE=10V 200 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 0.01 0.1 0.3 1 3 10 30 100 Forward current transfer ratio hFE 30 Collector current IC (mA) 120 120 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 80 Ta=75˚C 25˚C –25˚C 80 40 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 9 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN5210 IC — VCE 60 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 Ta=75˚C 250 25˚C 200 150 100 50 0 –25˚C Collector current IC (mA) 40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA 30 0.3mA 20 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN521D IC — VCE 30 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE=10V hFE — IC Ta=75˚C 25˚C –25˚C 120 25 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C IB=1.0mA 20 15 0.2mA 10 0.1mA Forward current transfer ratio hFE 100 Collector current IC (mA) Ta=25˚C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA 80 Ta=75˚C 40 5 0 0 2 4 6 8 10 12 0 0.3 1 3 10 30 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN521E IC — VCE 60 VCE(sat) — IC 100 hFE — IC IC/IB=10 160 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA Collector current IC (mA) 120 Ta=75˚C 25˚C –25˚C 40 0.3mA 0.4mA 0.5mA 0.2mA 30 80 0.1mA 20 40 10 –25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 0 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 11 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN521F IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE=10V 200 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Ta=75˚C Forward current transfer ratio hFE Collector current IC (mA) 160 0.9mA 0.8mA 0.7mA 0.6mA 120 Ta=75˚C 80 25˚C –25˚C 120 IB=1.0mA 0.5mA 0.4mA 0.3mA 80 40 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 –25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C VIN — IO 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN521K IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 240 VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.2mA 1.0mA 0.8mA 80 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 12 160 Ta=75˚C 120 25˚C 80 –25˚C 40 120 1 25˚C 0.1 Ta=75˚C 40 –25˚C 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 1 3 10 30 100 10 3 1 0.3 0.1 0.03 3 2 1 0 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN521L IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 240 hFE — IC VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75˚C 1 120 25˚C Ta=75˚C 25˚C 0.1 –25˚C –25˚C 80 40 0.2mA 0 0 2 4 6 8 10 12 40 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 13 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB 6 100 f=1MHz IE=0 Ta=25˚C IO — VIN VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 10 3 1 2 0.1 1 0 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN521M IC — VCE 240 VCE(sat) — IC 10 hFE — IC IC/IB=10 500 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.003 0.001 25˚C Forward current transfer ratio hFE Collector current IC (mA) 400 160 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 300 Ta=75˚C 25˚C 200 –25˚C 120 80 –25˚C 40 0.1mA 100 0 0 2 4 6 8 10 12 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 5 104 IO — VIN f=1MHz IE=0 Ta=25˚C VO=5V Ta=25˚C VIN — IO 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 4 Output current IO (µA) Input voltage VIN (V) 103 10 3 1 0.3 0.1 0.03 3 102 2 101 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 14 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN521N IC — VCE 160 Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 10 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 480 hFE — IC VCE=10V Forward current transfer ratio hFE 400 Ta=75˚C Collector current IC (mA) 120 100 80 60 40 1 320 25˚C 240 0.1 25˚C Ta=75˚C 160 –25˚C 0.1mA 20 0 0 2 4 6 8 10 12 80 –25˚C 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C 100 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 3 100 Input voltage VIN (V) 0.6 0.8 1 1.2 1.4 1000 10 1 2 10 0.1 1 0 1 10 100 1 0.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN521T IC — VCE 160 Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 80 60 40 0.1mA 20 0 0 2 4 6 8 10 12 0.3mA 0.2mA VCE(sat) — IC 10 hFE — IC IC/IB=10 480 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 400 Ta=75˚C 320 25˚C Collector current IC (mA) 120 100 1 240 0.1 25˚C Ta=75˚C –25˚C 160 80 –25˚C 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 15 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C 100 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 3 Input voltage VIN (V) 1000 10 100 1 2 10 0.1 1 0 1 10 100 1 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN521V IC — VCE 160 Ta=25˚C 140 VCE(sat) — IC 10 hFE — IC IC/IB=10 240 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 200 Collector current IC (mA) 120 100 80 60 40 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 1 160 Ta=75˚C 120 25˚C 80 –25˚C Ta=75˚C 0.1 25˚C 0.4mA 20 0 0 2 4 6 8 0.3mA 0.2mA 10 12 –25˚C 40 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C 100 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 10 3 100 1 2 10 0.1 1 0 1 10 100 1 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 16 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UN521Z IC — VCE 160 Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 80 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA 0.3mA VCE(sat) — IC 10 hFE — IC IC/IB=10 480 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 400 Collector current IC (mA) 120 100 1 320 Ta=75˚C 240 25˚C –25˚C Ta=75˚C 0.1 25˚C 160 –25˚C 80 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 VO=5V Ta=25˚C 100 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 3 100 Input voltage VIN (V) 0.6 0.8 1 1.2 1.4 1000 10 1 2 10 0.1 1 0 –1 –10 –100 1 0.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 17