UN611H

Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q s Resistance by Part Number q q q q q q q q q q q q q q q 0.45–0.05 +0.1 UN6111 UN6112 UN6113 UN6114 UN6115 UN6116 UN6117 UN6118 UN6119 UN6110 UN611D UN611E UN611F UN611H UN611L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 1 2 3 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 1 : Emitter 2 : Collector 3 : Base MT-1 Type Package Internal Connection R1 2.5±0.1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C 14.5±0.5 q 0.85 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 0.65 max. 1.0 3.5±0.1 0.8 s Features 0.15 0.7 4.0 1 Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L s Electrical Characteristics Parameter Collector cutoff current UN6111 UN6112/6114/611E/611D Emitter cutoff current UN6113 UN6115/6116/6117/6110 UN611F/611H UN6119 UN6118/611L Collector to base voltage Collector to emitter voltage UN6111 UN6112/611E Forward current transfer ratio UN6113/6114 UN6115*/6116*/6117*/6110* UN611F/611D/6119/611H UN6118/611L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN6113 UN611D UN611E Transition frequency UN6111/6114/6115 UN6112/6117 Input resistance UN6113/6110/611D/611E UN6116/611F/611L UN6118 UN6119 UN611H UN6111/6112/6113/611L UN6114 Resistance ratio UN6118/6119 UN611D UN611E UN611F UN611H (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 VCBO VCEO IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 35 60 hFE VCE = –10V, IC = –5mA 80 160 30 20 VCE(sat) VOH IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCC = –5V, VB = –10V, RL = 1kΩ VCC = –5V, VB = –6V, RL = 1kΩ fT VCB = –10V, IE = 1mA, f = 200MHz 80 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 0.8 0.17 0.08 R1/R2 3.7 1.7 0.37 0.17 1.0 0.21 0.1 4.7 2.14 0.47 0.22 1.2 0.25 0.12 5.7 2.6 0.57 0.27 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 MHz V – 0.25 V V 460 V V mA Unit µA µA * hFE rank classification (UN6115/6116/6117/6110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 Transistors with built-in Resistor Common characteristics chart PT — Ta 500 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L Total power dissipation PT (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN6111 IC — VCE –160 –140 IB=–1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE= –10V hFE — IC Ta=75˚C –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Collector current IC (mA) –0.9mA –120 –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Forward current transfer ratio hFE 25˚C 120 –25˚C 80 25˚C 40 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Transistors with built-in Resistor Characteristics charts of UN6112 IC — VCE –160 –140 Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 –0.4mA –0.3mA –0.2mA –0.1mA –100 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE — IC 400 VCE= –10V –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Forward current transfer ratio hFE Collector current IC (mA) –120 –100 300 Ta=75˚C 200 25˚C –25˚C 100 25˚C Ta=75˚C –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN6113 IC — VCE –160 IB=–1.0mA –140 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Forward current transfer ratio hFE 300 Ta=75˚C 25˚C 200 –25˚C –0.4mA –0.3mA –0.2mA 25˚C 100 –0.1mA –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 4 Transistors with built-in Resistor Cob — VCB 6 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L IO — VIN VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C –10000 –3000 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN6114 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V IB=–1.0mA –30 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 25˚C Ta=75˚C Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA Forward current transfer ratio hFE –140 300 Ta=75˚C 200 25˚C –25˚C 100 –8 –10 –12 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –1000 –300 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –100 –30 –10 –3 –1 –0.3 –0.1 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 5 Transistors with built-in Resistor Characteristics charts of UN6115 IC — VCE –160 –100 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V Collector current IC (mA) –120 –100 –80 –60 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 25˚C Ta=75˚C Forward current transfer ratio hFE –140 IB=–1.0mA –30 300 Ta=75˚C 200 25˚C –25˚C 100 –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 3 2 1 –0.03 –0.01 –0.1 –0.3 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN6116 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C hFE — IC VCE= –10V Collector current IC (mA) –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –8 Forward current transfer ratio hFE –140 IB=–1.0mA 300 Ta=75˚C –0.4mA –0.3mA –0.2mA 200 25˚C –25˚C 100 –0.1mA –25˚C –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 6 Transistors with built-in Resistor Cob — VCB 6 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L IO — VIN VIN — IO VO=–5V Ta=25˚C –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C –10000 –3000 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN6117 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V –100 Collector current IC (mA) –80 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C Forward current transfer ratio hFE –30 300 –60 –0.3mA –0.2mA –20 –0.1mA 200 Ta=75˚C –40 25˚C 100 –25˚C 0 0 –2 –4 –6 –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 IO — VIN f=1MHz IE=0 Ta=25˚C VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) –3000 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 7 Transistors with built-in Resistor Characteristics charts of UN6118 IC — VCE –240 –100 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Forward current transfer ratio hFE Collector current IC (mA) 120 Ta=75˚C 80 25˚C –25˚C 40 –80 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN6119 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C hFE — IC VCE= –10V –200 Forward current transfer ratio hFE Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA 120 Ta=75˚C 80 25˚C –25˚C –120 Ta=75˚C –80 –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –40 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 8 Transistors with built-in Resistor Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN6110 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE= –10V –30 –10 –3 –1 Ta=75˚C –0.3 –0.1 –0.03 –25˚C 25˚C Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA –60 –0.2mA –40 –0.1mA –20 300 Ta=75˚C 200 25˚C –25˚C 100 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 9 Transistors with built-in Resistor Characteristics charts of UN611D IC — VCE –60 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L VCE(sat) — IC –100 hFE — IC IC/IB=10 160 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) –50 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C Ta=75˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Ta=25˚C Collector current IC (mA) 120 Ta=75˚C –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –0.1mA –10 25˚C 80 –25˚C –20 40 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –300 –100 –30 –10 –3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN611E IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) –50 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Ta=25˚C –30 Collector current IC (mA) 300 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –0.2mA Ta=75˚C 25˚C 200 Ta=75˚C 100 25˚C –25˚C –20 –0.1mA –10 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 10 Transistors with built-in Resistor Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN611F IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Forward current transfer ratio hFE 120 Ta=75˚C 25˚C 80 –25˚C –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –25˚C 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 11 Transistors with built-in Resistor Characteristics charts of UN611H IC — VCE –120 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 Forward current transfer ratio hFE 200 Collector current IC (mA) –10 –80 IB=–0.5mA –0.4mA 160 Ta=75˚C 120 25˚C 80 –25˚C 40 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –3 –10 –30 –100 –300 –1000 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN611L IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –200 Forward current transfer ratio hFE –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –1 Ta=75˚C 25˚C –25˚C 200 Collector current IC (mA) –160 IB=–1.0mA –0.8mA –80 –0.6mA –0.4mA –0.2mA 0 0 –2 –4 –6 –8 –10 –12 160 –120 120 Ta=75˚C 25˚C –25˚C 80 –40 40 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 12 Transistors with built-in Resistor Cob — VCB 6 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L VIN — IO Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C –100 VO= –0.2V Ta=25˚C 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) 13