UN7231

Transistors with built-in Resistor UN7231 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. q q High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC ICP PT* Tj Tstg (Ta=25˚C) marking Ratings 20 20 0.7 1.5 1.0 150 –55 to +150 Unit V V A A W ˚C ˚C 1 : Emitter 2 : Collector 3 : Base EIAJ : SC–62 Mini-Power Type Package Marking Symbol: IC Internal Connection R1(1kΩ) * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. C B R2 (47kΩ) E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Input resistance Resistance ratio (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) fT R1 R1/R2 Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 VEB = 14V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = 150mA* IC = 500mA, IB = 5mA* VCB = 20V, IE = –20mA, f = 200MHz 0.7 0.016 55 1 0.021 1.3 0.025 *Pulse measurement 20 20 800 2100 0.4 V MHz kΩ min typ max 1 10 0.5 Unit µA µA mA V V 2.5±0.1 +0.25 s Features 1 Transistors with built-in Resistor PT — Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 0 0 2 4 6 8 10 12 1.2 UN7231 IC — VCE 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Total power dissipation PT (W) Collector current IC (A) Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. IC/IB=100 1.0 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C IB=1.2mA 1.0mA 0.8 0.8mA 0.6mA 0.4mA 0.6 0.4 0.2mA 0.2 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) hFE — IC 2400 30 Cob — VCB Collector output capacitance Cob (pF) VCE=10V Forward current transfer ratio hFE 2000 25 1600 25˚C 1200 Ta=75˚C 20 15 –25˚C 800 10 400 5 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.3 1 3 10 30 100 Collector current IC (A) Collector to base voltage VCB (V) 2