UNA0222

Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated 0.4±0.1 14 13 12 11 10 9 8 12° 5.5±0.3 7.7±0.3 12 3 4567 0.9±0.1 0.8 1.5±0.1 1.5+0.2 –0.1 0.5 45° 0.2+0.1 –0.0 ■ Absolute Maximum Ratings Ta = 25°C Parameter PNP Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Peak collector current NPN Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature * 6.5±0.3 Symbol VCBO VCEO IC ICP VCBO VCEO IC ICP PT Tj Tstg Rating −10 −10 −3 −4 10 10 3 4 0.5 150 −55 to +150 Unit V V A A V V A A W °C °C 12° 1: Collector 2: Base 3: Collector 4: Base 5: Collector 6: Base 7: Emitter 8: Collector 9: Base 13: Base 10: Collector 14: Emitter 11: Base 12: Collector SO14-G1 Package Marking Symbol: UN222 Internal Connection 14 13 12 11 10 9 8 Note) *: When the dissipation on one device is TC = 25°C 1234567 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJK00046BED 0.5±0.2 1 UNA0222 ■ Electrical Characteristics Ta = 25°C ± 3°C • PNP Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Forward voltage *1 Bias resistance *2 Symbol VCBO VCEO ICBO hFE VCE(sat) fT Cob VF REB Conditions IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 VCB = −6 V, IE = 0 VCE = −1 V, IC = − 0.5 A IC = −2 A, IB = −50 mA VCB = −6 V, IE = 50 mA, f = 200 MHz VCB = −6 V, IE = 0, f = 1 MHz IF = −1 A −30% 10 150 70 −1.5 +30% 200 Min −10 −10 −1 700 − 0.45 Typ Max Unit V V µA  V MHz pF V kΩ • NPN Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Forward voltage *1 Bias resistance *2 Symbol VCBO VCEO ICBO hFE VCE(sat) fT Cob VF REB Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 VCB = 6 V, IE = 0 VCE = 1 V, IC = 0.5 A IC = 2 A, IB = 50 mA VCB = 6 V, IE = −50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz IF = 1 A −30% 10 150 50 1.5 +30% 200 Min 10 10 1 700 0.25 Typ Max Unit V V µA  V MHz pF V kΩ Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Application to the built-in diode *2: Application to the built-in resistance 2 SJK00046BED UNA0222 Common characteristics chart PT  Ta 0.6 Total power dissipation PT (W) 0.5 0.4 0.3 0.2 0.1 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of PNP transistor block −6 IC  VCE Ta = 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −10 IC / IB = 40 600 hFE  IC VCE = −1 V Forward current transfer ratio hFE −5 500 Collector current IC (A) −1 Ta = 75°C 25°C −25°C Ta = 75°C 25°C −25°C −4 IB = −12 mA −10 mA −8 mA −6 mA −2 −4 mA −2 mA 400 −3 −10−1 300 200 −10−2 −1 100 0 0 −2 −4 −6 −8 −10 −12 −10−3 − 0.01 − 0.1 −1 −10 0 − 0.01 − 0.1 −1 −10 Collector-emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 240 f = 1 MHz IE = 0 Ta = 25°C 200 160 120 80 40 0 −1 −10 −100 Collector-base voltage VCB (V) SJK00046BED 3 UNA0222 Characteristics charts of NPN transistor block IC  VCE Collector-emitter saturation voltage VCE(sat) (V) 6 Ta = 25°C 10 VCE(sat)  IC IC / IB = 40 hFE  IC 600 VCE = 1 V Forward current transfer ratio hFE 5 500 Ta = 75°C 400 25°C −25°C 300 Collector current IC (A) 1 Ta = 75°C 25°C −25°C 4 IB = 12 mA 3 10 mA 8 mA 10−1 2 6 mA 4 mA 200 10−2 1 2 mA 100 0 0 2 4 6 8 10 12 10−3 0.01 0.1 1 10 0 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 240 f = 1 MHz IE = 0 Ta = 25°C 200 160 120 80 40 0 1 10 100 Collector-base voltage VCB (V) 4 SJK00046BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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