UNR2211

Composite Transistors XP06211 (XP6211) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 Unit: mm 0.12+0.05 –0.02 ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 6 5 4 1.25±0.10 2.1±0.1 1 2 3 ■ Basic Part Number • UNR2211 (UN2211) × 2 10˚ (0.65) (0.65) 1.3±0.1 2.0±0.1 0.9±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 150 150 −55 to +150 Unit V V mA mW °C °C 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) EIAJ : SC-88 0 to 0.1 Marking Symbol: 7Z Internal Connection 6 5 4 Tr2 Tr1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 1 2 0.9+0.2 –0.1 ■ Absolute Maximum Ratings Ta = 25°C 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SMini6-G1 Package 3 Min 50 50 Typ Max Unit V V µA µA mA  0.1 0.5 0.5 35 0.25 4.9 0.2 −30% 0.8 10 1.0 150 +30% 1.2 V V V kΩ  MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: June 2003 SJJ00206BED 0.2±0.1 5˚ 1 XP06211 PT  Ta 250 160 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25°C IC  VCE Collector-emitter saturation voltage VCE(sat) (V) 100 VCE(sat)  IC IC / IB = 10 Total power dissipation PT (mW) Collector current IC (mA) 200 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA 10 150 80 0.3 mA 1 25°C 0.1 −25˚C 100 0.2 mA 40 Ta = 75°C 50 0.1 mA 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0.01 0.1 1 10 100 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE  IC Collector output capacitance C (pF) (Common base, input open circuited) ob 400 VCE = 10 V 6 Cob  VCB f = 1 MHz IE = 0 Ta = 25°C IO  VIN 104 VO = 5 V Ta = 25°C Forward current transfer ratio hFE 5 4 200 25°C 100 −25°C 3 Output current IO (µA) 1 10 100 300 Ta = 75°C 103 102 2 10 1 0 1 10 100 1 000 0 0.1 1 0.4 0.6 0.8 1.0 1.2 1.4 Collector current IC (mA) Collector-base voltage VCB (V) Input voltage VIN (V) VIN  IO 100 VO = 0.2 V Ta = 25°C Input voltage VIN (V) 10 1 0.1 0.01 0.1 1 10 100 Output current IO (mA) 2 SJJ00206BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL