UNR32A1

Transistors with built-in Resistor UNR32A1 Silicon NPN epitaxial planar type Unit: mm For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 100 125 −55 to +125 Unit V V mA mW °C °C 5° 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.01 0.52±0.03 5° 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: FK Internal Connection R1 (10 kΩ) B R2 (10 kΩ) C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ −30% 0.8 10 1.0 150 4.9 0.2 +30% 1.2 35 0.25 Min 50 50 0.1 0.5 0.5 Typ Max Unit V V µA µA mA  V V V kΩ  MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 0.15 max. 0.15 min. 0.80±0.05 1.20±0.05 Publication date: October 2003 SJH00055BED 1 UNR32A1 PT  Ta 120 80 0.9 mA 0.8 mA IC  VCE 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IB = 1.0 mA 10 Total power dissipation PT (mW) 100 Collector current IC (mA) 60 80 1 60 40 0.2 mA Ta = 85°C 40 0.1 −25°C 20 0.1 mA Ta = 25°C 20 25°C IC / IB = 10 0.01 1 10 100 1 000 0 0 0 40 80 120 0 2 4 6 8 10 12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE  IC Collector output capacitance C (pF) (Common base, input open circuited) ob 250 Cob  VCB 10 VCE = 10 V IO  VIN 100 VO = 5 V Ta = 25°C f = 1 MHz Ta = 25°C Forward current transfer ratio hFE 200 Ta = 85°C 25°C Output current IO (mA) 1 0 10 20 30 40 10 150 100 −25°C 1 50 0 1 10 100 0.1 0 1 2 Collector current IC (mA) Collector-base voltage VCB (V) Input voltage VIN (V) VIN  IO 100 VO = 0.2 V Ta = 25°C Input voltage VIN (V) 10 1 0.1 1 10 100 Output current IO (mA) 2 SJH00055BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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