UNR911BJ

Transistors with built-in Resistor UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Silicon PNP epitaxial planer transistor For digital circuits 1.6±0.15 0.4 0.8±0.1 0.4 0.2 -0.05 0.15 -0.05 +0.1 Unit: mm s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-Mini type package, allowing automatic insertion through tape packing and magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Resistance by Part Number q q q q q q q q q q q q q q q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 125 125 –55 to +125 Unit V V mA mW ˚C ˚C 1 : Base 2 : Emitter 3 : Collector SS–Mini Flat Type Pakage (J type) Internal Connection R1 0 to 0.1 Marking Symbol (R1) UN9111 6A 10kΩ UN9112 6B 22kΩ UN9113 6C 47kΩ UN9114 6D 10kΩ UN9115 6E 10kΩ UN9116 6F 4.7kΩ UN9117 6H 22kΩ UN9118 6I 0.51kΩ UN9119 6K 1kΩ UN9110 6L 47kΩ UN911D 6M 47kΩ UN911E 6N 47kΩ UN911F 6O 4.7kΩ UN911H 6P 2.2kΩ UN911L 6Q 4.7kΩ UNR911AJ 6X 100kΩ UNR911BJ 6Y 100kΩ UNR911CJ 6Z — (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 100kΩ — 47kΩ 0 to 0.1 0.2±0.1 1 : Base 2 : Emitter 3 : Collector SS–Mini Type Pakage Unit: mm 1.60± 0.05 0.80 0.80± 0.05 0.425 0.425 0.80 1.00± 0.05 1.60–0.03 +0.05 0.50 0.50 +0.1 0.85–0.03 +0.05 0.12–0.01 +0.03 C B R2 E 0.70–0.03 +0.05 0.27± 0.02 0.80 1 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ s Electrical Characteristics Parameter Collector cutoff current UN9111 UN9112/9114/911E/911D Emitter cutoff current UN9113/UNR911AJ UN9115/9116/9117/9110/UNR911BJ UN911F/911H UN9119 UN9118/911L/911CJ Collector to base voltage Collector to emitter voltage UN9111 Forward current transfer ratio UN9112/911E UN9113/9114/UNR911AJ/911CJ UN9115*/9116*/9117*/9110*UNR911BJ UN911F/911D/9119/911H UN9118/911L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN9113/UNR911BJ UN911D UN911E UNR911AJ Transition frequency UNR911AJ UN9111/9114/9115 UN9112/9117 UN9113/9110/911D/911E Input resistance UN9116/911F/911L UN9118 UN9119 UN911H UNR911AJ/911BJ (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 VCBO VCEO IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 35 60 hFE VCE = –10V, IC = –5mA 80 160 30 20 VCE(sat) VOH IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VCC = –5V, VB = –3.5V, RL = 1kΩ VOL VCC = –5V, VB = –10V, RL = 1kΩ VCC = –5V, VB = –6V, RL = 1kΩ VCC = –5V, VB = –5.0V, RL = 1kΩ fT VCB = –10V, IE = 2mA, f = 200MHz 150 80 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 100 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 – 0.2 MHz V – 0.25 V V 460 V V mA Unit µA µA * hFE rank classification (UN9115/9116/9117/9110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ s Electrical Characteristics (continued) Parameter UN9111/9112/9113/911L UN9114 UN9118/9119 Resistance ratio UN911D UN911E UN911F UN911H UNR911AJ Resistance between Emitter to Base UNR911CJ R2 R1/R2 Symbol (Ta=25˚C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 0.17 0.22 1.0 –30% 47 30% 0.27 max 1.2 0.25 0.12 Unit 3 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Common characteristics chart PT — Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN9111 IC — VCE –160 –140 IB=–1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE= –10V hFE — IC Ta=75˚C –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Collector current IC (mA) –0.9mA –120 –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Forward current transfer ratio hFE 25˚C 120 –25˚C 80 25˚C 40 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Characteristics charts of UN9112 IC — VCE –160 –140 Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 –0.4mA –0.3mA –0.2mA –0.1mA –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE — IC 400 VCE= –10V –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Forward current transfer ratio hFE Collector current IC (mA) –120 –100 300 Ta=75˚C 200 25˚C –25˚C 100 25˚C Ta=75˚C –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN9113 IC — VCE –160 IB=–1.0mA –140 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE= –10V Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Forward current transfer ratio hFE 300 Ta=75˚C 25˚C 200 –25˚C –0.4mA –0.3mA –0.2mA 25˚C 100 –0.1mA –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN9114 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V IB=–1.0mA –30 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 25˚C Ta=75˚C Collector current IC (mA) –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA Forward current transfer ratio hFE –140 300 Ta=75˚C 200 25˚C –25˚C 100 –8 –10 –12 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –1000 –300 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –100 –30 –10 –3 –1 –0.3 –0.1 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Characteristics charts of UN9115 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V Collector current IC (mA) –120 –100 –80 –60 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 25˚C Ta=75˚C Forward current transfer ratio hFE –140 IB=–1.0mA –30 300 Ta=75˚C 200 25˚C –25˚C 100 –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 3 2 1 –0.03 –0.01 –0.1 –0.3 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN9116 IC — VCE –160 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C hFE — IC VCE= –10V Collector current IC (mA) –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –120 –100 –80 –60 –40 –20 0 0 –2 –4 –6 –8 Forward current transfer ratio hFE –140 IB=–1.0mA 300 Ta=75˚C –0.4mA –0.3mA –0.2mA 200 25˚C –25˚C 100 –0.1mA –25˚C –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 7 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO=–0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN9117 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V –100 Collector current IC (mA) –80 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 25˚C Ta=75˚C Forward current transfer ratio hFE –30 300 –60 –0.3mA –0.2mA –20 –0.1mA 200 Ta=75˚C –40 25˚C 100 –25˚C 0 0 –2 –4 –6 –8 –10 –12 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 IO — VIN f=1MHz IE=0 Ta=25˚C VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) –3000 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Characteristics charts of UN9118 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Forward current transfer ratio hFE Collector current IC (mA) 120 Ta=75˚C 80 25˚C –25˚C 40 –80 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN9119 IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C hFE — IC VCE= –10V –200 Forward current transfer ratio hFE Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA 120 Ta=75˚C 80 25˚C –25˚C –120 Ta=75˚C –80 –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –40 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 9 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN9110 IC — VCE –120 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE= –10V –30 –10 –3 –1 Ta=75˚C –0.3 –0.1 –0.03 –25˚C 25˚C Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA –60 –0.2mA –40 –0.1mA –20 300 Ta=75˚C 200 25˚C –25˚C 100 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –0.6 –0.8 –1.0 –1.2 –1.4 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Characteristics charts of UN911D IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 160 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) –50 –30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –25˚C Ta=75˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Ta=25˚C Collector current IC (mA) 120 Ta=75˚C –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –0.1mA –10 25˚C 80 –25˚C –20 40 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –300 –100 –30 –10 –3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN911E IC — VCE –60 VCE(sat) — IC –100 hFE — IC IC/IB=10 400 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) –50 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Ta=25˚C –30 Collector current IC (mA) 300 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –0.2mA Ta=75˚C 25˚C 200 Ta=75˚C 100 25˚C –25˚C –20 –0.1mA –10 0 0 –2 –4 –6 –8 –10 –12 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 11 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Cob — VCB 6 –10000 f=1MHz IE=0 Ta=25˚C –3000 IO — VIN VO=–5V Ta=25˚C –100 –30 VIN — IO VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 –300 –100 –30 –10 –3 Input voltage VIN (V) –2.0 –2.5 –3.0 –3.5 –4.0 –1000 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –1.5 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN911F IC — VCE –240 –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE= –10V –200 Collector current IC (mA) –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Forward current transfer ratio hFE 120 Ta=75˚C 25˚C 80 –25˚C –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –12 40 –25˚C 0 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –100 –30 VIN — IO VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Characteristics charts of UN911H IC — VCE –120 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE=–10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 Forward current transfer ratio hFE 200 Collector current IC (mA) –10 –80 IB=–0.5mA –0.4mA 160 Ta=75˚C 120 25˚C 80 –25˚C 40 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –3 –10 –30 –100 –300 –1000 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO=–0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN911L IC — VCE –240 VCE(sat) — IC –100 hFE — IC IC/IB=10 240 VCE= –10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –200 Forward current transfer ratio hFE –30 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –1 Ta=75˚C 25˚C –25˚C 200 Collector current IC (mA) –160 IB=–1.0mA –0.8mA –80 –0.6mA –0.4mA –0.2mA 0 0 –2 –4 –6 –8 –10 –12 160 –120 120 Ta=75˚C 25˚C –25˚C 80 –40 40 –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 13 UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C –100 VO= –0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) –10 3 –1 2 –0.1 1 0 –1 –3 –10 –30 –100 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Output current IO (mA) 14