UP04316

Composite Transistors UP04316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching For digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.30) 6 5 4 0.20+0.05 –0.02 Unit: mm 0.10±0.02 1.20±0.05 1.60±0.05 5˚ • UNR2216 + UNR2116 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −100 125 125 −55 to +125 Unit V V mA V 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: 7U Internal Connection V mA mW °C °C 6 5 4 Tr1 Tr2 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = 10 V, IE = − 2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ −30% 4.7 150 4.9 0.2 +30% 160 Min 50 50 0.1 0.5 0.01 460 0.25 Typ Max Unit V V µA µA mA − V V V kΩ MHz 0.10 max. 5˚ 0.55±0.05 ■ Basic Part Number Display at No.1 lead (0.20) (0.20) Publication date: December 2003 SJJ00249BED 1 UP04316 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C • Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = − 10 V, IE = 1 mA, f = 200 MHz Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 VEB = −6 V, IC = 0 VCE = −10 V, IC = −5 mA IC = −10 mA, IB = − 0.3 mA VCC = − 5 V, VB = − 0.5 V, RL = 1 kΩ VCC = −5 V, VB = −2.5 V, RL = 1 kΩ −30% 4.7 80 −4.9 − 0.2 +30% 160 Min −50 −50 − 0.1 − 0.5 − 0.01 460 − 0.25 Typ Max Unit V V µA µA mA − V V V kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT  Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of Tr1 IC  VCE 160 102 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C IC / IB = 10 400 hFE  IC VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 120 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA Ta = 75°C 300 25°C −25°C 200 10 80 1 Ta = 75°C 10−1 25°C 40 100 0.1 mA 0 0 4 8 12 −25°C 10−2 10−1 1 10 102 0 1 10 102 103 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 2 SJJ00249BED UP04316 Cob  VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25°C IO  VIN 104 VO = 5 V Ta = 25°C 102 VIN  IO VO = 0.2 V Ta = 25°C 5 Output current IO (µA) 103 4 3 102 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 10 1 2 10 10−1 1 0 10−1 1 10 102 1 0.4 10−2 10−1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of Tr2 IC  VCE −160 IB = −1.0 mA Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 0 −4 −8 −12 VCE(sat)  IC −102 hFE  IC 400 VCE = −10 V Collector-emitter saturation voltage VCE(sat) (V) IC / IB = 10 −120 −10 Forward current transfer ratio hFE Collector current IC (mA) 300 Ta = 75°C −1 Ta = 75°C −1 200 25°C −25°C −10 25°C 100 −25°C −1 −10 −102 0 −1 −10 −102 −103 −10−2 −10−1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance (Common base, input open circuited) Cob (pF) 6 f = 1 MHz IE = 0 Ta = 25°C −10 4 IO  VIN V O = −5 V Ta = 25°C VIN  IO −102 VO = − 0.2 V Ta = 25°C 5 4 Output current IO (µA) Input voltage VIN (V) −10 3 −10 3 −10 2 −1 2 −10 −10−1 1 0 −10−1 −1 −10 −102 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4 −10−2 −10−1 −1 −10 −102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00249BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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