UP04501

Composite Transistors UP04501 Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.30) 6 5 4 1.20±0.05 1.60±0.05 0.20+0.05 –0.02 Unit: mm 0.10±0.02 5˚ (0.20) Display at No.1 lead ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 7 100 200 125 125 −55 to +125 Unit V V V mA mA mW °C °C Tr1 Tr2 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: 5H Internal Connection 6 5 4 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = −2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 150 3.5 180 Min 60 50 7 0.1 100 390 0.3 Typ Max Unit V V V µA µA  V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 0.10 max. • 2SD0601A × 2 5˚ 0.55±0.05 ■ Basic Part Number (0.20) Publication date: December 2003 SJJ00232BED 1 UP04501 PT  Ta 150 50 Ta = 25°C IC  VCE IB = 160 µA 140 µA 40 IC  I B 160 VCE = 10 V Ta = 25°C Total power dissipation PT (mW) 125 Collector current IC (mA) Collector current IC (mA) 120 µA 30 100 µA 80 µA 20 60 µA 40 µA 10 20 µA 0 120 100 75 80 50 40 25 0 0 40 80 120 160 0 4 8 12 0 0 0.4 0.8 1.2 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA) IB  VBE 10 120 IC  VBE 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 10 VCE = 10 V Ta = 25°C 100 VCE = 10 V Collector current IC (mA) 8 Base current IB (mA) 1 80 6 Ta = 75°C −25°C 60 10−1 Ta = 75°C 25°C −25°C 4 40 10−2 2 20 0 0 0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1.0 10−3 10−1 1 10 102 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Collector current IC (mA) hFE  IC 400 VCE = 10 V Ta = 75°C 25°C 240 −25°C 160 Forward current transfer ratio hFE 320 80 0 10−1 1 10 102 103 Collector current IC (mA) 2 SJJ00232BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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