15N06L

PJD15N06L 60V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@10A=40mΩ • RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 15N06L Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJC RθJA Li mi t 60 +20 15 60 38 22 -5 5 to + 1 5 0 120 3 .3 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=21A, VDD=30V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJD15N06L ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 3 0 V , ID = 1 0 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 1 0 A , V G S = 0 V 0 .9 10 1 .2 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ VDD=30V , RL=30Ω ID=1A , VGEN=10V RG=3.6Ω V D S = 3 0 V , ID = 1 0 A V GS = 1 0 V 3 2 .5 3 .6 5 .4 13.2 5.8 42 6 .2 1750 130 80 nC 16.5 7.6 ns 55 7 .8 pF 1 7 .2 0 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, ID=8.0A VGS=10V, ID=10A VDS=60V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = 1 0 V , ID = 1 0 A 60 1 20 36 32 3 50 mΩ 40 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit V IN V DD Gate Charge Test Circuit V GS V OUT V DD RL RL RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJD15N06L Typical Characteristics Curves (TA=25 C,unless otherwise noted) O ID - Drain-to-Source Current (A) 50 40 30 20 10 0 0 VGS=10V, 6.0V, 5.0V, 4.5V, 4.0V ID - Drain Source Current (A) 50 40 30 20 V DS=10V 3.5V 3.0V T J=125 OC 2.5V 10 T J=25 OC T J=-55 OC 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 V GS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 80 120 R DS(ON) - On-Resistance (m W ) 70 60 50 40 30 20 10 0 R DS(ON) - On-Resistance (m W ) ID =10A 100 80 V GS=4.5V V GS=10V T J125oC OC =125 60 40 T =25 C TJJ=25oOC 20 2 4 6 8 10 0 10 20 30 40 50 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 V GS=10V I D=10A -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature (oC) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 PAGE . 3 PJD15N06L VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 5 10 15 20 25 30 35 Vgs Qg V DS =30V I D =10A Vgs(th) Qsw Qg(th) Qgs Qgd Qg Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform Vth - G-S Threshold Voltage (NORMALIZED) Fig.7 - Gate Charge 73 71 69 67 65 63 61 59 -50 BVDSS - Breakdown Voltage (V) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 I D =250uA I D =250uA -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature (o C) TJ - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 100 V GS =0V IS - Source Current (A) 10 1 T J =125 OC T J =25 OC T J =-55 OC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4