1N5260B

1N5260B

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    1N5260B - SILICON ZENER DIODES - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5260B 数据手册
DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 500 mWatts FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : Sn can meet RoHS environment substance directive request MECHANICAL DATA • Case: Molded Glass DO-35 • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See Diagram Below • Approx. Weight: 0.13 grams • Mounting Position: Any • Ordering information: Suffix : “ -35 ” to order DO-35 Package • Packing information B - 2K per Bulk box T/R - 10K per 13" plastic Reel T/B - 5K per horiz. tape & Ammo box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS P ar m et r a e P ow erD i si aton atTam b = 25 spi Juncton Tem per t r i aue S t r ge Tem per t r R ange oa aue Vald pr vi ed t atl ads ata di t nce of8m m fom case ar keptatam bi ntt m per t r . i od he sa r e ee aue O S ym bol Val e u 500 175 - 5 t +175 6o U nis t mW O C P TO T TJ TS C C O Parameter Thermal Resi stance Juncti on to Ambi ent Ai r Forward Voltage at IF = 200mA Symbol Mi n. --- Typ. Max. 0.3* 1.1 Uni ts K/mW V RθJA VF --- Vali d provi ded that leads at a di stance of 10 mm from case are kept at ambi ent temperature. STAD-NOV.08.2006 PAGE . 1 N ominal Zener Voltage Part N umber No m. V 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B 2.4 2.5 2.7 2.8 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 V Z @ IZT M i n. V 2.28 2.38 2.57 2.66 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.7 5.89 6.46 7.13 7.79 8.27 8.65 9.5 10.45 11.4 12.35 13.3 14.25 15.2 16.15 17.1 18.05 19 20.9 22.8 23.75 25.65 26.6 28.5 31.35 34.2 37.05 40.85 44.65 48.45 53.2 57 58.9 64.6 71.25 M a x. V 2.52 2.63 2.84 2.94 3.15 3.47 3.78 4.1 4.52 4.94 5.36 5.88 6.3 6.51 7.14 7.88 8.61 9.14 9.56 10.5 11.55 12.6 13.65 14.7 15.75 16.8 17.85 18.9 19.95 21 23.1 25.2 26.25 28.35 29.4 31.5 34.65 37.8 40.95 45.15 49.35 53.55 58.8 63 65.1 71.4 78.75 Max. Zener Impedance Z ZT @ I ZT Ω 30 30 30 30 29 28 24 23 22 19 17 11 7 7 5 6 8 8 10 17 22 30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 150 125 150 170 185 230 270 mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 3.4 3.2 3 2.7 2.5 2.2 2.1 2 1.8 1.7 Z ZK @ I ZK Ω 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1400 1600 1700 mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Max R everse Leakage C urrent IR @ V R uA 100 100 75 75 50 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V 1 1 1 1 1 1 1 1 1 2 2 3 3.5 4 5 6 6.5 6.5 7 8 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 M a ki g rn c de o 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B STANDARD VOLTAGE TOLERANCE IS + 5% AND: SUFFIX “A” FOR + 3% SUFFIX “B” FOR + 5% SUFFIX “C” FOR + 10% SUFFIX “D” FOR + 20% * MEASURED WITH PULSES Tp=40 mSec. STAD-NOV.08.2006 ZENERDIODENUMBERINGSYSTEM: 1N5225B B 1* 2* 1* TYPE NO. 2* TOLERANCE OF VZ 3* e.g., 1N5225B=3.0V + 5% PAGE . 2 RATING AND CHARACTERISTIC CURVES POWER DISSIPATION, mWatts 500 400 300 200 100 0 50 100 150 200 O 250 AMBIENT TEMPERATURE, C FIG. 1 POWER DERATING CURVE Vz (V) 5 10 15 20 25 30 Iz (mA) 50 40 30 20 10 Test Current Iz = 20mA 0 15 12 11 9.1 20 6.8 6.2 5.6 5.1 4.7 4.3 24 3.9 2.7 Fig.2 BREAKDOWN CHARACTERISTICS STAD-NOV.08.2006 PAGE . 3
1N5260B
1. 物料型号: - 1N5221B~1N5267B,这些是硅齐纳二极管的型号,电压范围从2.4到75伏特,功率为500毫瓦,封装为DO-35。

2. 器件简介: - 这些器件采用平面芯片结构,具有500mW的功率耗散,非常适合自动化装配流程,并且是无铅产品,符合RoHS环保指令要求。

3. 引脚分配: - 引脚可焊性符合MIL-STD-750标准,方法2026,极性见下图。

4. 参数特性: - 最大耗散功率:500mW - 结温:175℃ - 存储温度范围:-65至+175℃ - 热阻(结到环境空气):最小值为0.3 K/mW - 正向电压在200mA时:最小值为1.1V

5. 功能详解: - 这些齐纳二极管具有不同的额定稳压值,从2.4V到75V不等,具体型号和参数见下表。

6. 应用信息: - 这些器件适用于需要稳定电压的各种应用场合。

7. 封装信息: - 封装类型为Molded Glass DO-35,重量约为0.13克,可任意位置安装,订购信息为在型号后加“-35”以订购DO-35封装,包装信息为B型2K每散装盒,T/R型10K每13英寸塑料卷,T/B型5K每水平胶带和弹药盒。
1N5260B 价格&库存

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