1N5341B

1N5341B

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    1N5341B - GLASS PASSIVATED JUNCTION SILICON ZENER DIODES - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5341B 数据手册
DATA SHEET 1N5334B~1N5378B GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Typical ID less than 1.0µA above 13V .375(9.5) .285(7.2) 1.0(25.4)MIN. 3.6 to 100 Volts CURRENT 5.0 Watts DO-201AE Unit: inch(mm) .042(1.07) .037(0.94) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Pb free product are available : 99% Sn can meet RoHS environment substance directive request MECHANICALDATA Case: JEDEC DO-201AE molded plastic Terminals: Axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denoted cathode except Bipolar Mounting Position: Any Weight: 0.045 ounce, 1.2 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter DC Power Dissipation on TL=75OC ,Measure at Zero Lead Length Derate above 50OC ( NOTE 1) Operating Junction and StorageTemperature Range Symbol Value 5.0 40 -50 to +150 Units Watts mW / OC O PD TJ , TSTG 1.0(25.4)MIN. .210(5.3) .188(4.8) C NOTE: 1.Mounted on 8.0mm2 copper pads to each terminal. REV.0-APR.12.2005 PAGE . 1 N o m i na l Ze ne r V o l t a g e Part Number No m. V 1N5334B 1N5335B 1N5336B 1N5337B 1N5338B 1N5339B 1N5340B 1N5341B 1N5342B 1N5343B 1N5344B 1N5345B 1N5346B 1N5347B 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B 1N5360B 1N5361B 1N5362B 1N5363B 1N5364B 1N5365B 1N5366B 1N5367B 1N5368B 1N5369B 1N5370B 1N5371B 3.6 3.9 4.3 4.7 5.1 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 V Z @ IZT M i n. V 3.4 3.7 4.1 4.5 4.9 5.3 5.7 5.9 6.5 7.1 7.8 8.3 8.7 9.5 10.5 11.4 12.4 13.3 14.3 15.2 16.2 17.1 18.1 19 20.9 22.8 23.8 25.7 26.6 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 57 M a x. V 3.8 4.1 4.52 4.9 5.4 5.9 6.3 6.5 7.1 7.9 8.6 9.1 9.6 10.5 11.6 12.6 13.7 14.7 15.8 16.8 17.9 18.9 20 21 23.1 25.2 26.3 28.4 29.4 32 34.7 37.8 41 45 49 53.6 58.8 63 O hm s 2.5 2 2 2 1.5 1 1 1 1 1.5 1.5 2 2 2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 3 3 3.5 3.5 4 5 6 8 10 11 14 20 25 27 35 40 M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT mA 350 320 290 260 240 220 200 200 175 175 150 150 150 125 125 100 100 100 75 75 70 65 65 65 50 50 50 50 50 40 40 30 30 30 25 25 20 20 Z ZK @ IZK O hm s 500 500 500 450 400 400 300 200 200 200 200 200 150 125 125 125 100 75 75 75 75 75 75 75 75 100 110 120 130 140 150 160 170 190 210 230 280 350 mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum Leakage Current IR µA 150 50 10 5 1 1 1 1 10 10 10 10 7.5 5 5 2 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 VR V 1 1 1 1 1 2 3 3 5.2 5.7 6.2 6.6 6.9 7.6 8.4 9.1 9.9 10.6 11.5 12.2 12.9 13.7 14.4 15.2 16.7 18.2 19 20.6 21.2 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 45.5 REV.0-APR.12.2005 PAGE . 2 N o m i na l Ze ne r V o l t a g e Part Number No m. V 1N5372B 1N5373B 1N5374B 1N5375B 1N5376B 1N5377B 1N5378B 62 68 75 82 87 91 100 V Z @ IZT M i n. V 58.9 64.6 71.3 77.9 82.7 86.5 95 M a x. V 65.1 71.4 78.8 86.1 91.4 95.6 105 O hm s 42 44 45 65 75 75 90 M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT mA 20 20 20 15 15 15 12 Z ZK @ IZK O hm s 400 500 620 720 760 760 800 mA 1 1 1 1 1 1 1 Maximum Leakage Current IR µA 0.5 0.5 0.5 0.5 0.5 0.5 0.5 VR V 47.1 51.7 56 62.2 66 69.2 76 REV.0-APR.12.2005 PAGE . 3 RATING AND CHARACTERISTIC CURVES q V z, TEMPERATURE COEFFICIENT (mV/C)@IZT 8 P D , MAXIMUM STEADY STATE POWER DISSIPATION (WATTS) 400 300 200 100 50 30 20 10 6 4 2 5 0 0 30 60 90 O 120 150 0 20 40 60 80 100 120 140 160 180 200 220 T L , LEAD TEMPERATURE ( C) Vz,ZENER VOLTAGE@Iz T (VOLTS) Fig.1 Power temperature Derating Curve Fig.2 Temperature Coefficient-Range for Units 10 to 100 Volts 30 I ZT , Z E N E R C U R R E N T ( m A ) 20 Vz=3.3V 1000 T=25 O C Ipp, PEAK SURGE CURRENT (A ) 10 5 Tc=25 O C 100 Vz=100V 2 1 0.5 10 1 0.2 0.1 0.1 1 10 100 1000 1 2 3 4 5 6 7 8 9 10 PW, PULSE WIDTH (ms) Vz, ZENER VOLTAGE (VOLTS) Fig.3 Peak Surge Current versus Pulse Width F i g . 4 Z e n e r Vo l t a g e vers u s Z ene r Current Vz=3.3 Thru 10 Volts 1000 I ZT , ZENER CURRENT (mA) T=25 O C 100 I ZT , Z E N E R C U R R E N T ( m A ) 100 10 10 1 1 0.1 10 20 30 40 50 60 70 80 0.1 80 100 120 140 160 180 200 220 Vz, ZENER VOLTAGE (VOLTS) Vz, ZENER VOLTAGE (VOLTS) Fig.5 Zener Voltage versus Zener Current Vz=11 Thru 75 Volts Th Fig.6 Zener Voltage versus Zener Current Vz=82 Thru 100 Volts REV.0-APR.12.2005 PAGE . 4
1N5341B
1. 物料型号: - 1N5334B~1N5378B

2. 器件简介: - 这些是玻璃钝化结硅齐纳二极管,电压范围从3.6到100伏特,功率为5.0瓦特。它们适用于表面贴装应用,以优化板空间,具有低轮廓封装、内置应力消除、玻璃钝化结、低电感、典型IR小于1.0微安培(在13伏特以上)。

3. 引脚分配: - 轴向引线,可焊性符合MIL-STD-750,方法2026。

4. 参数特性: - 最大直流功耗(TL=75°C,测量在零引线长度时):5.0瓦特 - 工作结和存储温度范围:-50至+150摄氏度

5. 功能详解: - 这些齐纳二极管具有不同的额定齐纳电压,从3.6伏特到100伏特不等,以及相应的最大齐纳阻抗和最大漏电流。例如,1N5334B型号的额定齐纳电压为3.6伏特,最小值为3.4伏特,最大值为3.8伏特,最大齐纳阻抗为350欧姆,最大漏电流为1微安培。

6. 应用信息: - 这些器件适用于需要电压稳定和保护的电路,例如电源、信号处理和电压参考。

7. 封装信息: - 封装类型为JEDEC DO-201AE模塑塑料,带有轴向引线,可焊性符合MIL-STD-750,方法2026。
1N5341B 价格&库存

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