1N5357B

1N5342B~1N5369B SILICON ZENER DIODES VOLTAGE FEATURES • Low profile package • Built-in strain relief • Low inductance • Typical ID less than 1.0µA above 13V .375(9.5) .285(7.2) 1.0(25.4)MIN. 6.8 to 51 Volts CURRENT 5.0 Watts DO-201AE Unit: inch(mm) • For surface mounted applications in order to optimize board space. .042(1.07) .037(0.94) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: JEDEC DO-201AE molded plastic • Terminals: Axial leads, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denoted cathode except Bipolar • Mounting Position: Any • Weight: 0.0395 ounce, 1.122 gram 1.0(25.4)MIN. .210(5.3) .188(4.8) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter DC Power Dissipation on TL =75O C ,Measure at Zero Lead Length Derate above 50O C ( NOTE 1) Operating Junction and StorageTemperature Range Symbol Value 5.0 -55 to +150 Units Watts O PD TJ , TSTG C NOTE: 1.Mounted on 8.0mm2 copper pads to each terminal. STAD-FEB.10.2009 1 PAGE . 1 1N5342B~1N5369B N o m i na l Ze ne r V o l t a g e Part Number No m. V 1N5342B 1N5343B 1N5344B 1N5345B 1N5346B 1N5347B 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B 1N5360B 1N5361B 1N5362B 1N5363B 1N5364B 1N5365B 1N5366B 1N5367B 1N5368B 1N5369B 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 V Z @ IZT M i n. V 6.46 7.13 7.79 8.27 8.65 9.5 10.45 11.4 12.35 13.3 14.25 15.2 16.15 17.1 18.05 19 20.9 22.8 23.75 25.65 26.6 28.5 31.35 34.2 37.05 40.85 44.65 48.45 M a x. V 7.14 7.88 8.61 9.14 9.56 10.5 11.55 12.6 13.65 14.7 15.75 16.8 17.85 18.9 19.95 21 23.1 25.2 26.25 28.35 29.4 31.5 34.65 37.8 40.95 45.15 49.35 53.55 Ω 1 2 2 2 2 2 3 3 3 3 3 3 3 3 3 3 4 4 4 5 6 8 10 11 14 20 25 27 M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT mA 175 175 150 150 150 125 125 100 100 100 75 75 70 65 65 65 50 50 50 50 50 40 40 30 30 30 25 25 Ω 200 200 200 200 150 125 125 125 100 75 75 75 75 75 75 75 75 100 110 120 130 140 150 160 170 190 210 230 Z ZK @ IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum Leakage Current IR µA 10 10 10 10 7.5 5 5 2 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 VR V 5.2 5.7 6.2 6.6 6.9 7.6 8.4 9.1 9.9 10.6 11.5 12.2 12.9 13.7 14.4 15.2 16.7 18.2 19 20.6 21.2 22.8 25.1 27.4 29.7 32.7 35.8 38.8 STAD-FEB.10.2009 1 PAGE . 2 1N5342B~1N5369B RATING AND CHARACTERISTIC CURVES q V z, TEMPERATURE COEFFICIENT (mV/C)@IZT 8 P D , MAXIMUM STEADY STATE POWER DISSIPATION (WATTS) 300 200 100 50 30 20 RANGE 6 4 2 10 5 0 20 40 60 80 100 0 0 30 60 90 120 150 T L , LEAD TEMPERATURE ( OC) Vz,ZENER VOLTAGE@Iz T (VOLTS) Fig.1 Power temperature Derating Curve Fig.2 Temperature Coefficient-Range for Units 11 to 39 Volts 30 ir, PEAK SURGE CURRENT (AMPS) 1000 20 10 5 2 1 0.5 IZ, ZENER CURRENT (mA) Vz=3.3V T=25 O C 100 10 Vz=51V 1 0.2 0.1 0.1 1 10 100 1000 10 20 30 40 50 PW, PULSE WIDTH (ms) Vz, ZENER VOLTAGE (VOLTS) Fig.3 Peak Surge Current versus Pulse Width Fig.4 Zener Voltage versus Zener Current Vz=11 thru 39 Volts STAD-FEB.10.2009 1 PAGE . 3