1N5926B_04

DATA SHEET 1N5926B~1N5939B GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE FEATURES • Low profile package 1.0(25.4)MIN. 11 to 39 Volts POWER 1.5 Watts DO-41 Unit: inch(mm) • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Both normal and Pb free product are available : Pb free: 98.5% Sn above Normal : 80~95% Sn, 5~20% Pb .034(.86) .028(.71) MECHANICALDATA 1.0(25.4)MIN. .205(5.2) .160(4.1) .107(2.7) .080(2.0) Case: JEDEC DO-41,Molded plastic over passivated junction. Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes positive end (cathode) Standard packing: 52mm tape Weight: 0.012 ounce, 0.3 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. P ar m et r a e D C P ow erD i si aton on TA =75 O C , easur atZer Lead Lengt spi M e o h D er t above 75O C (N O TE 1) ae O per tng Juncton and S t r geTem per t r R ange ai i oa aue S ym bol Val e u 1. 5 - 5 t +150 5o U nis t W ats t O PD TJ ,TSTG C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. STAD-JUN.23.2004 PAGE . 1 N o m i a l Z e ne r V o l a g e n t P ar N um ber t ZT VZ @ I M a xi um Z e ne r I p e d a nce m m Z ZT @ I ZT Z ZK @ I ZK mA 34. 1 31. 2 28. 8 25. 0 23. 4 20. 8 18. 7 17. 0 15. 6 13. 9 12. 5 11. 4 10. 4 9. 6 O hm s 550 550 550 600 600 650 650 650 700 700 750 800 850 900 mA 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 0. 5 2 M axi um m Leakage C urent r I R uA 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 1. 0 VR V 8. 4 9. 1 9. 9 11. 4 12. 2 13. 7 15. 2 16. 7 18. 2 20. 6 22. 8 25. 1 27. 4 29. 7 N om . V 1N 5926B 1N 5927B 1N 5928B 1N 5929B 1N 5930B 1N 5931B 1N 5932B 1N 5933B 1N 5934B 1N 5935B 1N 5936B 1N 5937B 1N 5938B 1N 5939B 11. 0 12. 0 13. 0 15. 0 16. 0 18. 0 20. 0 22. 0 24. 0 27. 0 30. 0 33. 0 36. 0 39. 0 M i .V n 10. 5 11. 4 12. 4 14. 3 15. 2 17. 1 19. 0 20. 9 22. 8 25. 7 28. 5 31. 4 34. 2 37. 1 M a x. V 11. 6 12. 6 13. 7 15. 8 16. 8 18. 9 21. 0 23. 1 25. 2 28. 4 31. 5 34. 7 37. 8 41. 0 O hm s 5. 5 6. 5 7. 0 9. 0 10. 0 12. 0 14. 0 17. 5 19. 0 23. 0 26. 0 33. 0 38. 0 45. 0 STAD-JUN.23.2004 PAGE . 2 q vz, TEMPERATURE COEFICENT (mV/ OC) MAXIMUM POWER DISSIPATION, Watts 2.5 2 1.5 1 0.5 0 10 8 6 4 2 0 -2 -4 2 4 6 8 10 12 V @I Z ZT 0 20 40 60 80 100 120 140 150 180 LEAD TEMPERATURE, C O V , ZENER VOLTAGE (VOLTS) Z Fig.1 Steady State Power Derating Fig.2 T emperature coeeficient v.s. zener voltage,Vz(V) q vz, TEMPERATURE COEFICENT (mV/ OC) 200 100 70 50 30 20 10 10 20 30 50 V @I Z ZT Zz, DYNAMIC IMPEDANCE (OHMS) 1K 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 T = 25 O C J I (rms) =0.1 I (dc) Z Z 22V 12V 6.8V 50 100 200 500 Vz, ZENER VOLTAGE (VOLTS) Iz, ZENER TEST CURRENT (mA) Fig.3 T emperature coeeficient v.s. zener voltage,Vz(V) F i g . 4 Z ener impedance v.s. zener current 1K 200 100 70 50 30 20 10mA I Z (dc)=1mA Ppk, PEAKSURGE POWER (WATTS) Zz, DYNAMIC IMPEDANCE (OHMS) 500 300 200 100 50 30 20 10 0.1 0.20.3 0.5 RECTANGULAR NONREPETITIVE WAVEFORM O T J =25 C PRIOR TO INTIAL PULSE 10 7 5 3 2 20mA I Z (rms)=0.1I Z (dc) 5 7 10 20 3 0 40 50 60 70 100 1 23 5 10 20 30 50 100 Vz, ZENER VOLTAGE (VOLTS) PW, PULSE WIDTH (ms) F i g . 5 Z ener impedance v.s. zener voltage Fig.6 Maximum Surge Power STAD-JUN.23.2004 PAGE . 3 100 Iz, ZENER CURRENT (mA) 100 Iz, ZENER CURRENT (mA) 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 10 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0 .1 0 10 20 30 40 Vz, ZENER VOLTAGE (VOLTS) Vz, ZENER VOLTAGE (VOLTS) Fig.7 Vz = 6.8 thru 10 Volts Fig.8 Vz = 12 thru 82 Volts NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient O temperature at 25 C NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz STAD-JUN.23.2004 PAGE . 4