1N5930B

1N5930B

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    1N5930B - SILICON ZENER DIODES - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5930B 数据手册
1N5921B~1N5942B SILICON ZENER DIODES VOLTAGE FEATURES • Low profile package 1.0(25.4)MIN. 6.8 to 51 Volts POWER 1.5 Watts DO-41 Unit: inch(mm) • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • In compliance with EU RoHS 2002/95/EC directives .034(.86) .028(.71) MECHANICALDATA • Case: JEDEC DO-41,Molded plastic over passivated junction. • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes positive end (cathode) • Standard packing: 52mm tape • Weight: 0.0118 ounce, 0.336 gram .205(5.2) .160(4.1) .107(2.7) 1.0(25.4)MIN. .080(2.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter DC Power Dissipation on TA=75 O C ,Measure at Zero Lead Length Derate above 75O C ( NOTE 1) Operating Junction and StorageTemperature Range Symbol Value 1.5 -55 to +150 Units Watts O PD TJ , TSTG C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. STAD-FEB.10.2009 1 PAGE . 1 1N5921B~1N5942B N o m i na l Ze ne r V o l t a g e Part Number No m. V 1N5921B 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5928B 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 1N5939B 1N5940B 1N5941B 1N5942B 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 V Z @ IZT M i n. V 6.46 7.13 7.79 8.65 9.5 10.45 11.4 12.35 14.25 15.2 17.1 19 20.9 22.8 25.65 28.5 31.35 34.2 37.05 40.85 44.65 48.45 M a x. V 7.14 7.88 8.61 9.56 10.5 11.55 12.6 13.65 15.75 16.8 18.9 21 23.1 25.2 28.35 31.5 34.65 37.8 40.95 45.15 49.35 53.55 Ω 3 3 4 4 5 6 7 7 9 10 12 14 18 19 23 26 33 38 45 53 67 70 M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT mA 55.1 50 45.7 41.2 37.5 34.1 31.2 28.8 25 23.4 20.8 18.7 17 15.6 13.9 12.5 11.4 10.4 9.6 8.7 8 7.3 Ω 200 400 400 500 500 550 550 550 600 600 650 650 650 700 700 750 800 850 900 950 1000 1100 Z ZK @ IZK mA 1 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Maximum Leakage Current IR µA 5 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VR V 5.2 6 6.5 7 8 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 STAD-FEB.10.2009 1 PAGE . 2 1N5921B~1N5942B q vz, TEMPERATURE COEFICENT (mV/ OC) MAXIMUM POWER DISSIPATION, Watts 2.5 2 1.5 1 0.5 0 10 8 6 4 2 0 -2 -4 2 4 6 8 10 12 V @I Z ZT 0 20 40 60 80 100 120 140 150 180 LEAD TEMPERATURE, C O V , ZENER VOLTAGE (VOLTS) Z Fig.1 Steady State Power Derating Fig.2 T emperature coeeficient v.s. zener voltage,Vz(V) q vz, TEMPERATURE COEFICENT (mV/ OC) 200 100 70 50 30 20 10 10 20 30 50 V @I Z ZT Zz, DYNAMIC IMPEDANCE (OHMS) 1K 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 T = 25 O C J I (rms) =0.1 I (dc) Z Z 22V 12V 6.8V 50 100 200 500 Vz, ZENER VOLTAGE (VOLTS) Iz, ZENER TEST CURRENT (mA) Fig.3 T emperature coeeficient v.s. zener voltage,Vz(V) Fig.4 Z ener impedance v.s. zener current 1K 200 100 70 50 30 20 10mA I Z (dc)=1mA Ppk, PEAKSURGE POWER (WATTS) Zz, DYNAMIC IMPEDANCE (OHMS) 500 300 200 100 50 30 20 10 0.1 0.20.3 0.5 RECTANGULAR NONREPETITIVE WAVEFORM O T J =25 C PRIOR TO INTIAL PULSE 10 7 5 3 2 20mA I Z (rms)=0.1I Z (dc) 5 7 10 20 3 0 40 50 60 70 100 1 23 5 10 2030 50 100 Vz, ZENER VOLTAGE (VOLTS) PW, PULSE WIDTH (ms) Fig.5 Z ener impedance v.s. zener voltage STAD-FEB.10.2009 1 Fig.6 Maximum Surge Power PAGE . 3 1N5921B~1N5942B 100 Iz, ZENER CURRENT (mA) 100 Iz, ZENER CURRENT (mA) 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 10 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0 .1 0 10 20 30 40 Vz, ZENER VOLTAGE (VOLTS) Vz, ZENER VOLTAGE (VOLTS) Fig.7 Vz = 6.8 thru 10 Volts Fig.8 Vz = 12 thru 82 Volts NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient O temperature at 25 C NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz STAD-FEB.10.2009 1 PAGE . 4
1N5930B
1. 物料型号: - 型号为1N5921B至1N5942B的齐纳二极管。

2. 器件简介: - 这些是硅齐纳二极管,电压范围从6.8伏到51伏,功率为1.5瓦特。 - 特点包括低轮廓封装、内置应变缓解、低电感以及符合UL94V-0标准的塑料封装。 - 遵守欧盟RoHS 2002/95/EC指令。

3. 引脚分配: - 根据JEDEC DO-41标准,带有钝化结的模塑塑料封装。 - 极性由色带表示正端(阴极)。 - 标准包装为52毫米胶带。

4. 参数特性: - 最大额定值和电特性在25°C环境温度下给出,除非另有说明。 - 包括功率(1.5瓦特)、工作结温范围(-55至+150°C)等。

5. 功能详解: - 提供了不同型号的齐纳电压、最大齐纳阻抗和最大漏电流等参数。 - 例如,1N5921B型号的齐纳电压为6.8伏,最小6.46伏,最大7.14伏,最大漏电流为200微安。

6. 应用信息: - 这些齐纳二极管可用于需要电压稳定或保护的电路中。

7. 封装信息: - 封装类型为JEDEC DO-41,模塑塑料覆盖钝化结。 - 引脚为镀锡,符合MIL-STD-750方法2026的可焊性标准。 - 重量为0.0118盎司或0.336克。
1N5930B 价格&库存

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