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1N5934B

1N5934B

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    1N5934B - SILICON ZENER DIODES - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
1N5934B 数据手册
1N5921B~1N5942B SILICON ZENER DIODES VOLTAGE FEATURES • Low profile package 1.0(25.4)MIN. 6.8 to 51 Volts POWER 1.5 Watts DO-41 Unit: inch(mm) • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • In compliance with EU RoHS 2002/95/EC directives .034(.86) .028(.71) MECHANICALDATA • Case: JEDEC DO-41,Molded plastic over passivated junction. • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes positive end (cathode) • Standard packing: 52mm tape • Weight: 0.0118 ounce, 0.336 gram .205(5.2) .160(4.1) .107(2.7) 1.0(25.4)MIN. .080(2.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter DC Power Dissipation on TA=75 O C ,Measure at Zero Lead Length Derate above 75O C ( NOTE 1) Operating Junction and StorageTemperature Range Symbol Value 1.5 -55 to +150 Units Watts O PD TJ , TSTG C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. STAD-FEB.10.2009 1 PAGE . 1 1N5921B~1N5942B N o m i na l Ze ne r V o l t a g e Part Number No m. V 1N5921B 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5928B 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 1N5939B 1N5940B 1N5941B 1N5942B 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 V Z @ IZT M i n. V 6.46 7.13 7.79 8.65 9.5 10.45 11.4 12.35 14.25 15.2 17.1 19 20.9 22.8 25.65 28.5 31.35 34.2 37.05 40.85 44.65 48.45 M a x. V 7.14 7.88 8.61 9.56 10.5 11.55 12.6 13.65 15.75 16.8 18.9 21 23.1 25.2 28.35 31.5 34.65 37.8 40.95 45.15 49.35 53.55 Ω 3 3 4 4 5 6 7 7 9 10 12 14 18 19 23 26 33 38 45 53 67 70 M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT mA 55.1 50 45.7 41.2 37.5 34.1 31.2 28.8 25 23.4 20.8 18.7 17 15.6 13.9 12.5 11.4 10.4 9.6 8.7 8 7.3 Ω 200 400 400 500 500 550 550 550 600 600 650 650 650 700 700 750 800 850 900 950 1000 1100 Z ZK @ IZK mA 1 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Maximum Leakage Current IR µA 5 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VR V 5.2 6 6.5 7 8 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 STAD-FEB.10.2009 1 PAGE . 2 1N5921B~1N5942B q vz, TEMPERATURE COEFICENT (mV/ OC) MAXIMUM POWER DISSIPATION, Watts 2.5 2 1.5 1 0.5 0 10 8 6 4 2 0 -2 -4 2 4 6 8 10 12 V @I Z ZT 0 20 40 60 80 100 120 140 150 180 LEAD TEMPERATURE, C O V , ZENER VOLTAGE (VOLTS) Z Fig.1 Steady State Power Derating Fig.2 T emperature coeeficient v.s. zener voltage,Vz(V) q vz, TEMPERATURE COEFICENT (mV/ OC) 200 100 70 50 30 20 10 10 20 30 50 V @I Z ZT Zz, DYNAMIC IMPEDANCE (OHMS) 1K 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 T = 25 O C J I (rms) =0.1 I (dc) Z Z 22V 12V 6.8V 50 100 200 500 Vz, ZENER VOLTAGE (VOLTS) Iz, ZENER TEST CURRENT (mA) Fig.3 T emperature coeeficient v.s. zener voltage,Vz(V) Fig.4 Z ener impedance v.s. zener current 1K 200 100 70 50 30 20 10mA I Z (dc)=1mA Ppk, PEAKSURGE POWER (WATTS) Zz, DYNAMIC IMPEDANCE (OHMS) 500 300 200 100 50 30 20 10 0.1 0.20.3 0.5 RECTANGULAR NONREPETITIVE WAVEFORM O T J =25 C PRIOR TO INTIAL PULSE 10 7 5 3 2 20mA I Z (rms)=0.1I Z (dc) 5 7 10 20 3 0 40 50 60 70 100 1 23 5 10 2030 50 100 Vz, ZENER VOLTAGE (VOLTS) PW, PULSE WIDTH (ms) Fig.5 Z ener impedance v.s. zener voltage STAD-FEB.10.2009 1 Fig.6 Maximum Surge Power PAGE . 3 1N5921B~1N5942B 100 Iz, ZENER CURRENT (mA) 100 Iz, ZENER CURRENT (mA) 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 10 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0 .1 0 10 20 30 40 Vz, ZENER VOLTAGE (VOLTS) Vz, ZENER VOLTAGE (VOLTS) Fig.7 Vz = 6.8 thru 10 Volts Fig.8 Vz = 12 thru 82 Volts NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient O temperature at 25 C NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz STAD-FEB.10.2009 1 PAGE . 4
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