1N5949B

DATA SHEET 1N5913B~1N5956B GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE FEATURES • Low profile package 1.0(25.4)MIN. 3.3 to 200 Volts POWER 1.5 Watts DO-41 Unit: inch(mm) • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Pb free product are available : 99% Sn can meet RoHS environment substance directive request .034(.86) .028(.71) MECHANICALDATA Case: JEDEC DO-41,Molded plastic over passivated junction. Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes positive end (cathode) Standard packing: 52mm tape Weight: 0.012 ounce, 0.3 gram .205(5.2) .160(4.1) .107(2.7) 1.0(25.4)MIN. .080(2.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter DC Power Dissipation on TA=75 OC ,Measure at Zero Lead Length Derate above 75OC ( NOTE 1) Operating Junction and StorageTemperature Range Symbol Value 1. 5 -50 to +150 Units Watts O PD TJ , TSTG C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. REV.0-MAR.23.2005 PAGE . 1 N o m i na l Ze ne r V o l t a g e Part Number No m. V 1N5913B 1N5914B 1N5915B 1N5916B 1N5917B 1N5918B 1N5919B 1N5920B 1N5921B 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5928B 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 1N5939B 1N5940B 1N5941B 1N5942B 1N5943B 1N5944B 1N5945B 1N5946B 1N5947B 1N5948B 1N5949B 1N5950B 1N5951B 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 V Z @ IZT M i n. V 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.5 10.45 11.4 12.35 14.25 15.2 17.1 19.0 20.9 22.8 25.65 28.5 31.35 34.2 37.05 40.85 44.65 48.45 53.2 58.9 64.6 71.25 77.9 86.45 95 104.5 114 M a x. V 3.47 3.78 4.1 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.5 11.55 12.6 13.65 15.75 16.8 18.9 21 23.1 25.2 28.35 31.5 34.65 37.8 40.95 45.15 49.35 53.55 58.8 65.1 71.4 78.75 86.1 95.55 105 115.5 126 O hm s 10 9 7.5 6 5 4 2 2 2.5 3 3.5 4 4.5 5.5 6.5 7 9 10 12 14 17.5 19 23 26 33 38 45 53 67 70 86 100 120 140 160 200 250 300 380 M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT mA 113.6 104.2 96.1 87.2 79.8 73.5 66.9 60.5 55.1 50 45.7 41.2 37.5 34.1 31.2 28.8 25 23.4 20.8 18.7 17 15.6 13.9 12.5 11.4 10.4 9.6 8.7 8 7.3 6.7 6 5.5 5 4.6 4.1 3.7 3.4 3.1 Z ZK @ IZK O hm s 500 500 500 500 500 350 250 200 200 400 400 500 500 550 550 550 600 600 650 650 650 700 700 750 800 850 900 950 1000 1100 1300 1500 1700 2000 2500 3000 3100 4000 4500 mA 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Maximum Leakage Current IR µA 50 35.5 12.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 VR V 1 1 1 1 1.5 2 3 4 5.2 6 6.5 7 8 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56 62.2 69.2 76 83.6 91.2 REV.0-MAR.23.2005 PAGE . 2 N o m i na l Ze ne r V o l t a g e Part Number No m. V 1N5952B 1N5953B 1N5954B 1N5955B 1N5956B 130 150 160 180 200 V Z @ IZT M i n. V 123.5 142.5 152 171 190 M a x. V 136.5 157.5 168 189 210 O hm s 450 600 700 900 1200 M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT mA 2.9 2.5 2.3 2.1 1.9 Z ZK @ IZK O hm s 5000 6000 6500 7000 8000 mA 0.25 0.25 0.25 0.25 0.25 Maximum Leakage Current IR µA 0.5 0.5 0.5 0.5 0.5 VR V 98.8 114 121.6 136.8 152 REV.0-MAR.23.2005 PAGE . 3 q vz, TEMPERATURE COEFICENT (mV/ OC) MAXIMUM POWER DISSIPATION, Watts 2.5 2 1.5 1 0.5 0 10 8 6 4 2 0 -2 -4 2 4 6 8 10 12 V @I Z ZT 0 20 40 60 80 100 120 140 150 180 LEAD TEMPERATURE, C O V , ZENER VOLTAGE (VOLTS) Z Fig.1 Steady State Power Derating Fig.2 T emperature coeeficient v.s. zener voltage,Vz(V) q vz, TEMPERATURE COEFICENT (mV/ OC) 200 100 70 50 30 20 10 10 20 30 50 V @I Z ZT Zz, DYNAMIC IMPEDANCE (OHMS) 1K 5 00 2 00 1 00 50 20 10 5 2 1 0.5 1 2 5 10 20 T = 2 5 OC J I (r ms ) = 0 . 1 I (dc) Z Z 22V 12V 6.8 V 50 100 200 500 Vz, ZENER VOLTAGE (VOLTS) Iz, ZENER TEST CURRENT (mA) Fig.3 T emperature coeeficient v.s. zener voltage,Vz(V) Fig.4 Z ener impedance v.s. zener current 1K 200 100 70 50 30 20 10mA I Z (dc)=1mA Ppk, PEAKSURGE POWER (WATTS) Zz, DYNAMIC IMPEDANCE (OHMS) 500 300 200 100 50 30 20 10 0.1 0.20.3 0.5 RECTANGULAR NONREPETITIVE WAVEFORM O T J =25 C PRIOR TO INTIAL PULSE 10 7 5 3 2 20mA I Z (rms)=0.1I Z (dc) 5 7 10 20 3 0 40 50 60 70 100 1 23 5 10 20 30 50 100 Vz, ZENER VOLTAGE (VOLTS) PW, PULSE WIDTH (ms) Fig.5 Z ener impedance v.s. zener voltage Fig.6 Maximum Surge Power REV.0-MAR.23.2005 PAGE . 4 100 Iz, ZENER CURRENT (mA) 100 Iz, ZENER CURRENT (mA) 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 10 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 90 100 Vz, ZENER VOLTAGE (VOLTS) Vz, ZENER VOLTAGE (VOLTS) Fig.7 Vz = 6.8 thru 10 Volts Fig.8 Vz = 12 thru 82 Volts NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient O temperature at 25 C NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz REV.0-MAR.23.2005 PAGE . 5