1SMA5932

1SMA5914~1SMA5949 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Built-in strain relief • Glass passivated junction • Low inductance • Typical IR less than 1.0µA above 12V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals .096(2.44) .062(1.60) .047(1.20) .114(2.90) .098(2.50) 3.6 to 100 Volts POWER 1.5 Watts SMA/DO-214AC Unit: inch (mm) • Low profile package .181(4.60) .157(4.00) environment substance directive request MECHANICALDATA • Case: JEDEC DO-214AC,Molded plastic over passivated junction. • Terminals: Solder plated,solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes positive end (cathode) • Standard Packaging:12mm tape (EIA-481) • Weight: 0.002 ounce, 0.064 gram .060(1.52) .030(0.76) .078(2.00) • Pb free product : 99% Sn above can meet RoHS .012(.305) .006(.152) .008(.203) .002(.051) .208(5.28) .188(4.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS Pwak Pulse Power Dissipation on TA=70°C (Notes A) Derate above 70°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range VALUE 1.5 UNITS Watts mW / °C Amps °C PD IFSM TJ, TSTG 15.0 10 -55 to +150 NOTES: A.Mounted on 5.0mm2 (.013mm thick) land areas. B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum. STAD-JAN.13.2006 PAGE . 1 1SMA5914~1SMA5949 N o m i n a l Ze n e r Vo l t a g e Part N umber No m.V 1SMA5914 1SMA5915 1SMA5916 1SMA5917 1SMA5918 1SMA5919 1SMA5920 1SMA5921 1SMA5922 1SMA5923 1SMA5924 1SMA5925 1SMA5926 1SMA5927 1SMA5928 1SMA5929 1SMA5930 1SMA5931 1SMA5932 1SMA5933 1SMA5934 1SMA5935 1SMA5936 1SMA5937 1SMA5938 1SMA5939 1SMA5940 1SMA5941 1SMA5942 1SMA5943 1SMA5944 1SMA5945 1SMA5946 1SMA5947 1SMA5948 1SMA5949 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 V z@ I zt M i n. V 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 25.65 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 58.90 64.60 71.25 77.90 86.45 95.00 M a x. V 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 28.35 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 65.10 71.40 78.75 86.10 95.55 105.00 Ω 9 8 6 5 4 2 2 3 3 4 4 5 6 7 7 9 10 12 14 18 19 23 26 33 38 45 53 67 70 86 100 120 140 160 200 250 M a x i m u m Ze n e r I m p e d a n c e Z ZT @ I Zt mA 104.2 96.1 87.2 79.8 73.5 66.9 60.5 55.1 50.0 45.7 41.2 37.5 34.1 31.2 28.8 25.0 23.4 20.8 18.7 17.0 15.6 13.9 12.5 11.4 10.4 9.6 8.7 8.0 7.3 6.7 6.0 5.5 5.0 4.6 4.1 3.7 Ω 500 500 500 500 350 250 200 200 400 400 500 500 550 550 550 600 600 650 650 650 700 700 750 800 850 900 950 1000 1100 1300 1500 1700 2000 2500 3000 3100 Z ZK @ I ZK mA 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 0.50 0.50 0.50 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 µA 75.00 25.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 Max R everse Leakage C urrent I R@ V R V 1.00 1.00 1.00 1.50 2.00 3.00 4.00 5.20 6.00 6.50 7.00 8.00 8.40 9.10 9.90 11.40 12.20 13.70 15.20 16.70 18.20 20.60 22.80 25.10 27.40 29.70 32.70 35.80 38.80 42.60 47.10 51.70 56.00 62.20 68.20 76.00 914A 915A 916A 917A 918A 919A 920A 921A 922A 923A 924A 925A 926A 927A 928A 929A 930A 931A 932A 933A 934A 935A 936A 937A 938A 939A 940A 941A 942A 943A 944A 945A 946A 947A 948A 949A Marking C ode STAD-JAN.13.2006 PAGE . 2 1SMA5914~1SMA5949 P D , MAXIMUM POWER DISSIPATION (WATTS) q vz, TEMPERATURE COEFICENT (mV/ OC) 2.5 2 1.5 1 0.5 0 10 8 6 4 2 0 -2 -4 2 4 6 8 10 12 V @I Z ZT 0 20 40 60 80 100 120 140 150 180 TL,LEADTEMPERA TURE( C) O V , ZENER VOLTAGE (VOLTS) Z Fig.1 Steady State Power Derating Fig.2 Zener Voltage - to 12 volts q vz, TEMPERATURE COEFICENT (mV/ OC) 200 100 70 50 30 20 10 10 20 30 50 70 100 200 V @I Z ZT Zz, DYNAMIC IMPEDANCE (OHMS) 1K 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 VZ=150V 91V T = 25 O C J I (rms) =0.1 I (dc) Z Z 62V 22V 12V 6.8V 50 100 200 500 Vz, ZENER VOLTAGE (VOLTS) Iz, ZENER TEST CURRENT (mA) Fig.3 Zener Voltage - 14 to 200 Volts Fig.4 Effect of Zener Current 1K 200 100 70 50 30 20 10mA I Z (dc)=1mA Ppk, PEAKSURGE POWER (WATTS) Zz, DYNAMIC IMPEDANCE (OHMS) 500 300 200 100 50 30 20 10 0.1 0.20.3 0.5 RECTANGULAR NONREPETITIVE WAVEFORM O T J =25 C PRIOR TO INTIAL PULSE 10 7 5 3 2 20mA I Z (rms)=0.1I Z (dc) 5 7 10 20 3 0 40 50 60 70 100 1 23 5 10 20 30 50 100 Vz, ZENER VOLTAGE (VOLTS) PW, PULSE WIDTH (ms) Fig.5 Effect of Zener Voltage Fig.6 Maximum Surge Power STAD-JAN.13.2006 PAGE . 3 1SMA5914~1SMA5949 100 Iz, ZENER CURRENT (mA) 100 Iz, ZENER CURRENT (mA) 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 10 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 90 100 Vz, ZENER VOLTAGE (VOLTS) Vz, ZENER VOLTAGE (VOLTS) Fig.7 Vz = 6.8 thru 10 Volts Fig.8 Vz = 12 thru 82 Volts NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient O temperature at 25 C NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JAN.13.2006 PAGE . 4