1SMB2EZ82

1SMB2EZ6.8~1SMB2EZ100 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE FEATURES • Low profile package .155(3.94) .130(3.30) .083(2.11) .075(1.91) 6.8 to 100 Volts POWER 2.0 Watts SMB/DO-214AA Unit: inch (mm) • Built-in strain relief • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals .096(2.44) .083(2.13) .185(4.70) .160(4.06) • Pb free product are available : 99% Sn can meet RoHS environment substance directive request .012(.305) .006(.152) MECHANICALDATA Case: JEDEC DO-214AA, Molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Standard packing: 12mm tape (E1A-481) Weight: 0.003 ounce, 0.093 gram .050(1.27) .030(0.76) .008(.203) .002(.051) .220(5.59) .200(5.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter Peak Pulse Power Dissipation on TA=50O C (Notes A) Derate above 70O C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction and Storage Temperature Range Symbol Value 2.0 24.0 15 -55 to + 150 Units W atts mW/ O C Amps O PD IFSM TJ,TSTG C NOTES: A.Mounted on 5.0mm2 (.013mm thick) land areas. B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum STAD-JUL.16.2005 PAGE . 1 1SMB2EZ6.8~1SMB2EZ100 N o m i na l Ze ne r V o l t a g e Part Number No m. V 2.0 watt Zener Diodes 1SMB2EZ6.8 1SMB2EZ7.5 1SMB2EZ8.2 1SMB2EZ8.7 1SMB2EZ9.1 1SMB2EZ10 1SMB2EZ11 1SMB2EZ12 1SMB2EZ13 1SMB2EZ14 1SMB2EZ15 1SMB2EZ16 1SMB2EZ17 1SMB2EZ18 1SMB2EZ19 1SMB2EZ20 1SMB2EZ22 1SMB2EZ24 1SMB2EZ25 1SMB2EZ27 1SMB2EZ28 1SMB2EZ30 1SMB2EZ33 1SMB2EZ36 1SMB2EZ39 1SMB2EZ43 1SMB2EZ47 1SMB2EZ51 1SMB2EZ56 1SMB2EZ60 1SMB2EZ62 1SMB2EZ68 1SMB2EZ75 1SMB2EZ82 1SMB2EZ87 1SMB2EZ91 1SMB2EZ100 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 100 6.46 7.13 7.79 8.27 8.65 9..50 10.45 11.40 12.35 13.30 14.25 15.20 16.15 17.10 18.05 19.00 20.90 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 57.00 58.90 64.60 71.25 77.90 82.65 86.45 95.00 7.14 7.88 8.61 9.14 9.56 10.50 11.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90 19.95 21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 63.00 65.10 71.40 78.75 86.10 91.35 95.55 105.00 2 2 2 2 3 4 4 5 5 6 7 8 9 10 11 11 12 13 14 18 18 20 23 25 30 35 40 48 55 58 60 75 90 100 120 125 175 73.5 66.5 61.0 58.0 55.0 50.0 45.5 41.5 38.5 35.7 33.4 31.2 29.4 27.8 26.3 25.0 22.8 20.8 20.0 18.5 17.0 16.6 15.1 13.9 12.8 11.6 10.6 9.8 9.0 8.5 8.1 7.4 6.7 6.1 5.8 5.5 5.0 700 700 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 2000 3000 3000 3000 3000 1.00 0.50 0.50 0.50 0.50 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 5.00 5.00 5.00 4.00 3.00 3.00 1.00 1.00 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.50 4.00 5.00 6.00 6.60 7.00 7.60 8.40 9.10 9.90 10.60 11.40 12.20 13.00 13.70 14.40 15.20 16.70 18.20 19.00 20.60 21.30 22.50 25.10 27.40 29.70 32.70 35.80 38.80 42.60 45.60 47.10 51.70 56.00 62.20 66.10 69.20 76.00 2006 2007 2008 20A 8 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2022 2024 2025 2027 2028 2030 2033 2036 2039 2043 2047 2051 2056 2060 2062 2068 2075 2082 2087 2091 2100 SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB V Z @ IZT M i n. V M a x. V Z ZT @ IZT O hm s M a x i m u m Z e n e r Im p e d a n c e IZT mA Z ZK @ IZK O hm s IZK mA µA Max. Reverse Leakage Current IR @VR V Marking C ode P a cka g e STAD-JUL.16.2005 PAGE . 2 1SMB2EZ6.8~1SMB2EZ100 1 2 3 APPLICATION NOTE: Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, T L , should be determined from: T L = q LA P D + T A O q L A is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for q L A will vary and depends on the device mounting method. q L A is generally 30-40 OC/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: T J = T L + D T JL D T JL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses or from Figure 10 for dc power. D T JL = q J L P D For worst-case design, using expected limits of I Z , limits of P D and the extremes of T J ( D T J ) may be estimated. Changes in voltage, V Z , can then be found from: DV = qVZ DTJ q V Z , the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. STAD-JUL.16.2005 PAGE . 3 1SMB2EZ6.8~1SMB2EZ100 RANGE 4 5 6 7 8 STAD-JUL.16.2005 PAGE . 4