1SMB3EZ7.5

1SMB3EZ6.8~1SMB3EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals • In compliance with EU RoHS 2002/95/EC directives 6.8 to 51 Volts POWER 3.0 Watts MECHANICALDATA • Case: JEDEC DO-214AA, Molded plastic over passivated junction • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Indicated by cathode band • Standard packing: 12mm tape (E1A-481) • Weight: 0.0032 ounce, 0.092 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter Peak Pulse Power Dissipation on TL =50 O C (Notes A) Derate above 50 O C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction and Storage Temperature Range Symbol Value 3.0 Units W atts PD IFSM TJ,TSTG 15 -55 to + 150 Amps O C NOTES: A.Mounted on 5.0mm2 (.013mm thick) land areas. B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum STAD-MAR.25.2009 1 PAGE . 1 1SMB3EZ6.8~1SMB3EZ51 Max Reverse Leakage Current IZK mA µA IR @VR V N o m i na l Ze ne r V o l t a g e Part Number No m. V 3.0 Watt ZENER 1SMB3EZ6.8 1SMB3EZ7.5 1SMB3EZ8.2 1SMB3EZ8.7 1SMB3EZ9.1 1SMB3EZ10 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ16 1SMB3EZ17 1SMB3EZ18 1SMB3EZ19 1SMB3EZ20 1SMB3EZ22 1SMB3EZ24 1SMB3EZ25 1SMB3EZ27 1SMB3EZ28 1SMB3EZ30 1SMB3EZ33 1SMB3EZ36 1SMB3EZ39 1SMB3EZ43 1SMB3EZ47 1SMB3EZ51 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 6.46 7.13 7.79 8.27 8.65 9.5 10.45 11.4 12.35 13.3 14.25 15.2 16.15 17.1 18.05 19 20.9 22.8 23.75 25.65 26.6 28.5 31.35 34.2 37.05 40.85 44.65 48.45 7.14 7.88 8.61 9.14 9.56 10.5 11.55 12.6 13.65 14.7 15.75 16.8 17.85 18.9 19.95 21 23.1 25.2 26.25 28.35 29.4 31.5 34.65 37.8 40.95 45.15 49.35 53.55 2 2 2 2 3 4 4 5 5 5 6 6 6 6 7 7 8 9 10 10 12 16 20 22 28 33 38 45 V Z @ IZT M i n. V M a x. V M a x i m u m Z e n e r Im p e d a n c e Z ZT @ IZT Ω IZT mA Z ZK @ IZK Ω Marking C ode 110 100 91 85 82 75 68 63 58 53 50 47 44 42 40 37 34 31 30 28 27 25 23 21 19 17 16 15 700 700 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 1 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 5 5 5 4 3 3 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 4 5 6 6.6 7 7.6 8.4 9.1 9.9 10.6 11.4 12.2 13 13.7 14.4 15.2 16.7 18.2 19 20.6 21.3 22.5 25.1 27.4 29.7 32.7 35.8 38.8 6V 8B 7V 5B 8V 2B 8V 7B 9V 1B 10B 11B 12B 13B 14B 15B 16B 17B 18B 19B 20B 22B 24B 25B 27B 28B 30B 33B 36B 39B 43B 47B 51B STAD-MAR.25.2009 1 PAGE . 2 1SMB3EZ6.8~1SMB3EZ51 1 1000 500 300 200 100 50 30 20 10 2 3 APPLICATION NOTE: Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, T L , should be determined from: T L = q LA P D + T A O q L A is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for q L A will vary and depends on the device mounting method. q L A is generally 30-40 OC/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: T J = T L + D T JL D T JL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses or from Figure 10 for dc power. D T JL = J L P D q For worst-case design, using expected limits of I Z , limits of P D and the extremes of T J ( D T J ) may be estimated. Changes in voltage, V Z , can then be found from: D V = VZ TJ qD q V Z , the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. STAD-MAR.25.2009 1 PAGE . 3 1SMB3EZ6.8~1SMB3EZ51 RANGE 4 5 6 7 8 STAD-MAR.25.2009 1 PAGE . 4 1SMB3EZ6.8~1SMB3EZ51 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel T/R - 0.5Kper 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-MAR.25.2009 1 PAGE . 5