2N7002

DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts FEATURE N-channel enhancement mode field effect transistor,de.056(1.40) .047(1.20) CURRENT 200 mAmp SOT-23 .119(3.00) .110(2.80) Unit: inch ( mm ) signed for high speed pulse amplifier and drive application,which is manufactured by the N-channel DMOS process. Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .007(.20) MIN. .083(2.10) .066(1.70) .006(.15) .002(.05) MECHANICS DATA High density cell design for low RDS(ON) Voltage controlled small signal switching. Rugged and reliabale. High saturation current capability. High-speed switching.CMOS logic compatible. CMOS logic compatible input. Not thermal runaway. No secondary breakdown. 1 G 2 S .006(.15) MAX. .020(.50) .013(.35) .044(1.10) .035(.90) D 3 Marking Code: S72 ABSOLUTE MAXIMUM RATING TA=25 Unless otherwise noted SYMBOL VDSS V DRG VGSS ID PD TJ,TSTG R JA PARAMETER Drain-Source Voltage Drain-gate Voltage Gate-Source Voltage Maximum Drain Current-Continue -Pulse (Note1) Maximum power Dissipation Derating Above 25 Operating and Storage Temperature Range Thermal Risistance,Junction-to-Ambient Note: 1.Pulse Test: Pulse Width