2N7002DW_05

2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 5 6 2 1 3 FEATURES Dual N-Channel MOSFETS in Ultra-Small SOT-363 Package Low On-Resistance Low Gate Threshold Voltage Fast Switching Available in lead-free plating (100% matte tin finish) 6 5 4 APPLICATIONS Switching Power Supplies Hand-Held Computers, PDAs 1 2 3 MARKING CODE: 702 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current Total Power Dissipation (Note 2) Operating Junction Temperature Range Storage Temperature Range Note 1. RGS < 20K ohms TJ = 25°C Unless otherwise noted Symbol VDSS V DGR VGSS ID PD TJ Tstg Value 60 60 20 115 200 -55 to 150 -55 to 150 Units V V V mA mW °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 2) Symbol R thja Value 625 Units °C/W Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 8/11/2005 Page 1 www.panjit.com 2N7002DW Electrical Characteristics (Each Device) OFF CHARACTERISTICS (Note 3) Parameter Symbol Conditions Min 60 TJ=25°C TJ=125°C Typ 80 Max 1.0 500 ±10 Units V µA nA Drain-Source Breakdown Voltage BVDSS I D = 10µA, VGS= 0V Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Parameter Gate Threshold Voltage Symbol Conditions Min 1.0 0.5 0.08 Typ 1.6 1.8 2.0 1.65 Max 2.0 4.5 7.0 Units V Ohms A S V GS(th) VDS= V GS I D= 250µA , VGS= 5V, I D= 0.05A VGS= 10V, I D= 0.5A V DS= 10V, I D = 0.2A I DSS I GSS VDS= 60V, V GS= 0 VGS= ±20V, V DS= 0V T = 25°C Unless otherwise noted J Static Drain-Source On-ResistanceR DS(ON) On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Turn-Off Delay Time Symbol Symbol C iss Coss Crss I D(ON) VGS= 10V, V DS= 7.5V g FS Conditions VDS= 25V, VGS= 0V, f = 1.0MHz Min - Typ - Max 50 25 5.0 Units pF pF pF Conditions Min - Typ - Max 20 20 Units ns ns t D(ON) V =30V, I =0.2A, R =150ohm L DD D RGEN= 25ohm, VGEN = 10V t D(OFF) Note 3. Short duration test pulse used to minimize self-heating 8/11/2005 Page 2 www.panjit.com 2N7002DW Typical Characteristics Curves (Each Device) 1 ID - Drain-Source Current (A) 1.2 TJ = 25°C Unless otherwise noted V DS =10V 1 0.8 0.6 0.4 25oC 0.2 0 0.8 4.0V 0.6 VGS= 6V, 7V, 8V, 9V, 10V 0.4 0.2 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 3.0V ID - D rain Source Current (A 5.0V 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Fig. 1. Output Characteristics 10 RDS(ON) - O n-Resistance (Ohms) 8 6 4 2 V GS=10.0V 0 10 Fig. 2. Transfer Characteristics RDS(ON) - O n-Resistance (Ohms) 8 6 4 V GS = 4.5V Ids=500mA 2 Ids=50mA 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 ID - Drain Current (A) Fig. 3. On-Resistance vs. Drain Current V GS Threshold Voltage (NORMALIZED 1.1 1.05 1 0.95 0.9 0.85 0.8 -50 V GS - Gate-to-Source Voltage (V) Fig. 4. On-Resistance vs. G-S Voltage 10 IS - Source Current (A ID =250µA VGS = 0V 1 0.1 25oC -25 0 25 50 75 100 125 150 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 TJ - Junction Temperature (oC) Fig. 5. Threshold Voltage vs. Temperature 8/11/2005 Page 3 VSD - Source-to-Drain Voltage (V) Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com 2N7002DW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION 2N7002DW T/R7 - 7 inch reel, 3K units per reel 2N7002DW T/R13 - 13 inch reel, 10K units per reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 8/11/2005 Page 4 www.panjit.com