2N7002KDW_R1_00001

2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case: SOT-363 Package • Terminals: Solderable per MIL-STD-750,Method 2026 • Approx. Weight: 0.0002 ounces, 0.006 grams • Marking: K27 6 5 4 1 2 3 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) P a r a me t e r S y mb o l L i mi t Uni t s Dr a i n- S o ur c e Vo lt a g e V DS 60 V G a t e - S o ur c e Vo l t a g e VGS +20 V Co nt i nuo us D r a i n C ur r e nt ID 11 5 mA P uls e d D r a i n C ur r e nt I DM 800 mA PD 200 120 mW T J, T STG -55 t o +150 R θJA 625 1) M a ximum P o w e r D i s s i p a t i o n T A= 2 5 O C T A= 7 5 O C O p e r a t ing J unc t i o n a nd S t o r a g e Te mp e r a t ur e R a ng e J unc t i o n- t o A mb i e nt T he r ma l R e s i s t a nc e ( P CB mo unt e d ) 2 O O C C/W Note:1.Maximum DC current limited by the package 2.Surface mounted on FR4 board, t